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NTMFS4841NHT1G
+BOMMOSFET N-CH 30V 8.6A/59A 5DFN
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メーカーオンセミコンダクター社
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メーカー品番 #NTMFS4841NHT1G
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データシート NTMFS4841NHT1G DataSheet
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在庫状況12635
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 8.6A (Ta), 59A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33 nC @ 11.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2113 pF @ 12 V |
| Power Dissipation (Max) | 870mW (Ta), 41.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
概要
Description
The NTMFS4841NHT1G is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is primarily used for switching and amplifying electronic signals in various electronic devices. This MOSFET is part of the N-channel MOSFET family, which means it conducts when a positive voltage is applied to the gate terminal relative to the source terminal.
Key features of the NTMFS4841NHT1G include its low on-resistance, which enhances efficiency by minimizing power loss during operation. It is often chosen for its fast switching capabilities, making it suitable for applications in power management, automotive systems, and consumer electronics.
The device is packaged in a compact and thermally efficient manner, allowing it to handle significant amounts of power while maintaining reliability over extended periods. It is typically used in circuits requiring efficient load switching and voltage regulation. Overall, the NTMFS4841NHT1G is valued for its robustness, efficiency, and adaptability in various high-performance electronic applications.
Key features of the NTMFS4841NHT1G include its low on-resistance, which enhances efficiency by minimizing power loss during operation. It is often chosen for its fast switching capabilities, making it suitable for applications in power management, automotive systems, and consumer electronics.
The device is packaged in a compact and thermally efficient manner, allowing it to handle significant amounts of power while maintaining reliability over extended periods. It is typically used in circuits requiring efficient load switching and voltage regulation. Overall, the NTMFS4841NHT1G is valued for its robustness, efficiency, and adaptability in various high-performance electronic applications.
Equivalent
The NTMFS4841NHT1G is an N-channel MOSFET. Its equivalent products would include MOSFETs with similar voltage, current ratings, and package type. Some potential equivalents might be:
1. Vishay SiR680DP
2. Infineon BSC050N06NS
3. STMicroelectronics STL75N4LLF6
When selecting an equivalent, it's essential to verify the specifications and package compatibility to ensure they meet your requirements.
1. Vishay SiR680DP
2. Infineon BSC050N06NS
3. STMicroelectronics STL75N4LLF6
When selecting an equivalent, it's essential to verify the specifications and package compatibility to ensure they meet your requirements.
Features
The NTMFS4841NHT1G is a power MOSFET designed for efficiency and high performance. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of approximately 65A, making it suitable for various power applications. The MOSFET is built with advanced silicon technology that ensures low on-resistance (R_DS(on)), improving power efficiency and reducing heat generation during operation.
Key features include:
- Low R_DS(on) for minimized conduction loss.
- High-speed switching capabilities for enhanced system performance.
- Fully avalanche rated for reliable operation in demanding conditions.
- A compact and robust package that aids in efficient thermal management.
- ESD protection to prevent damage from electrostatic discharge.
The component is often used in applications such as DC-DC converters, motor control, and load switching due to its robustness and efficiency. Its compact packaging and high current rating make it an ideal choice for compact designs requiring efficient power handling.
Key features include:
- Low R_DS(on) for minimized conduction loss.
- High-speed switching capabilities for enhanced system performance.
- Fully avalanche rated for reliable operation in demanding conditions.
- A compact and robust package that aids in efficient thermal management.
- ESD protection to prevent damage from electrostatic discharge.
The component is often used in applications such as DC-DC converters, motor control, and load switching due to its robustness and efficiency. Its compact packaging and high current rating make it an ideal choice for compact designs requiring efficient power handling.
Pinout
The NTMFS4841NHT1G is a MOSFET (metal-oxide-semiconductor field-effect transistor) from ON Semiconductor. It comes in a small package and is typically used in power management applications due to its efficiency and performance characteristics.
- Pin Count:
The NTMFS4841NHT1G is generally housed in a 3-pin package, typically a DFN (Dual Flat No-leads) or similar configuration.
- Function:
This component is specifically a power MOSFET, designed to handle high current loads with low on-resistance, thereby improving efficiency in power conversion applications. It is often used in DC-DC converters, load switching, and other power management circuits. The MOSFET is characterized by its ability to switch high currents rapidly with minimal power loss, making it suitable for modern electronic devices requiring efficient power supply management.
This concise explanation covers the basics of the pin count and primary function of the NTMFS4841NHT1G MOSFET. For specific details such as electrical characteristics and thermal ratings, referring to the manufacturer's datasheet is recommended.
- Pin Count:
The NTMFS4841NHT1G is generally housed in a 3-pin package, typically a DFN (Dual Flat No-leads) or similar configuration.
- Function:
This component is specifically a power MOSFET, designed to handle high current loads with low on-resistance, thereby improving efficiency in power conversion applications. It is often used in DC-DC converters, load switching, and other power management circuits. The MOSFET is characterized by its ability to switch high currents rapidly with minimal power loss, making it suitable for modern electronic devices requiring efficient power supply management.
This concise explanation covers the basics of the pin count and primary function of the NTMFS4841NHT1G MOSFET. For specific details such as electrical characteristics and thermal ratings, referring to the manufacturer's datasheet is recommended.
Manufacturer
The NTMFS4841NHT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a semiconductor company that designs and manufactures a wide range of semiconductor components. These components are used in various applications such as automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power supply. The company focuses on providing energy-efficient and cost-effective solutions to meet the demands of modern electronics and technology applications.
Application
The NTMFS4841NHT1G is a Power MOSFET, which is commonly used in various applications due to its efficient switching capabilities. Typical application areas include power management solutions like DC-DC converters, motor drives, load switches, and LED drivers. It's also used in battery management systems for mobile devices, laptops, and other consumer electronics. Its low on-resistance and fast switching speed make it suitable for high-frequency applications, enhancing energy efficiency and thermal performance in power supply circuits.
Package
The NTMFS4841NHT1G is a MOSFET transistor, and its package type is a surface-mount, compact SO-8FL (Flat Lead) package. This package is designed for efficient heat dissipation and space-saving on PCBs, making it suitable for high-performance applications.
