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NTMFS4C09NT1G
+BOMMOSFET N-CH 30V 9A 5DFN
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メーカーオンセミコンダクター社
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メーカー品番 #NTMFS4C09NT1G
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データシート NTMFS4C09NT1G DataSheet
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在庫状況3573
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1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.9 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1252 pF @ 15 V |
| Power Dissipation (Max) | 760mW (Ta), 25.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NTMFS4 |
概要
Description
The NTMFS4C09NT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications in power management and switching. It features a low on-resistance, allowing for efficient current conduction and reduced power loss, making it suitable for use in DC-DC converters, power supplies, and motor control circuits.
Key specifications typically include a maximum drain-source voltage (Vds) of around 30V, a continuous drain current (Id) of up to 40A, and a threshold voltage (Vgs(th)) that allows for efficient switching at lower gate voltages. The NTMFS4C09NT1G is packaged in a surface-mount form factor, which is conducive for compact designs.
Due to its high efficiency and reliability, it is widely used in consumer electronics, automotive applications, and industrial systems. Its thermal performance is enhanced with a low thermal resistance, allowing for better heat dissipation during operation. Overall, the NTMFS4C09NT1G is a versatile component for engineers seeking efficient power management solutions.
Key specifications typically include a maximum drain-source voltage (Vds) of around 30V, a continuous drain current (Id) of up to 40A, and a threshold voltage (Vgs(th)) that allows for efficient switching at lower gate voltages. The NTMFS4C09NT1G is packaged in a surface-mount form factor, which is conducive for compact designs.
Due to its high efficiency and reliability, it is widely used in consumer electronics, automotive applications, and industrial systems. Its thermal performance is enhanced with a low thermal resistance, allowing for better heat dissipation during operation. Overall, the NTMFS4C09NT1G is a versatile component for engineers seeking efficient power management solutions.
Equivalent
The NTMFS4C09NT1G is an N-channel MOSFET known for its low R_DS(on) and high-speed switching capabilities. Equivalent products include the IRLZ44N STP16NF06, and FQP30N06L. Always verify specific parameters like voltage, current ratings, and package types to ensure compatibility in your application.
Features
The NTMFS4C09NT1G is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It supports continuous drain current (I_D) up to 50A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power losses.
4. Fast Switching: Optimized for fast switching speeds, ideal for applications like DC-DC converters and motor controls.
5. Thermal Performance: Good thermal properties with a TO-220 package, allowing for effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, facilitating operation in low-voltage applications.
These features make the NTMFS4C09NT1G an excellent choice for power management in various electronic devices.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It supports continuous drain current (I_D) up to 50A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power losses.
4. Fast Switching: Optimized for fast switching speeds, ideal for applications like DC-DC converters and motor controls.
5. Thermal Performance: Good thermal properties with a TO-220 package, allowing for effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, facilitating operation in low-voltage applications.
These features make the NTMFS4C09NT1G an excellent choice for power management in various electronic devices.
Pinout
The NTMFS4C09NT1G is an N-channel MOSFET with a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin enables or disables the device.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows into this pin when the MOSFET is conducting.
4. Body (B): The body diode is integrated within the MOSFET structure, allowing current to flow from the source to the drain when the device is off.
The NTMFS4C09NT1G features low on-resistance and is suitable for applications like power management and switching.
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin enables or disables the device.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows into this pin when the MOSFET is conducting.
4. Body (B): The body diode is integrated within the MOSFET structure, allowing current to flow from the source to the drain when the device is off.
The NTMFS4C09NT1G features low on-resistance and is suitable for applications like power management and switching.
Manufacturer
The NTMFS4C09NT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including power management, analog, and mixed-signal integrated circuits. The company serves various markets, including automotive, industrial, and consumer electronics. With a focus on innovation and sustainability, ON Semiconductor develops technologies that enhance energy efficiency and performance in electronic applications. Their product portfolio includes transistors, diodes, and sensors, catering to the growing demand for advanced electronic components in an increasingly connected world.
Application
The NTMFS4C09NT1G is a N-channel MOSFET commonly used in various applications, including power management, motor control, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supply circuits, LED drivers, and battery management systems. Additionally, it is utilized in consumer electronics, automotive applications, and industrial equipment for efficient power switching and control.
Package
The NTMFS4C09NT1G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and provides a robust structure for power applications.
