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NTMFWS1D5N08XT1G
+BOMMOSFET - POWER, SINGLE, N-CHANNE
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メーカーオンセミコンダクター社
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メーカー品番 #NTMFWS1D5N08XT1G
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データシート NTMFWS1D5N08XT1G DataSheet
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在庫状況15673
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 253A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.43mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 330µA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5880 pF @ 40 V |
| Power Dissipation (Max) | 194W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Package / Case | 8-PowerTDFN, 5 Leads |
概要
Description
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Equivalent
Pinout
The key functions of the pins in such MOSFETs typically include:
1. Gate (G): Used to control the MOSFET's switching state.
2. Drain (D): The main terminal through which current flows from the device when it is in the 'on' state.
3. Source (S): The terminal through which current exits the MOSFET.
4. Body/Back Gate (B): Often internally connected to the source, used for intrinsic body diode conduction.
Specific pin assignments may vary slightly, so consulting the datasheet for precise pin-out details and configuration is recommended.
Manufacturer
The company is known for its focus on energy-efficient solutions, providing products that help reduce power consumption and improve performance in electronic devices. onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices.
In essence, onsemi is a technology company that plays a significant role in the electronics supply chain by providing essential components used in the development and manufacturing of modern electronic systems.