仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 675 pF @ 10 V |
| Power Dissipation (Max) | 420mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概要
Description
The NTR4101PT1G is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 41 mΩ at 4.5V gate drive, minimizing power loss.
- Low Threshold Voltage (VGS(th)): ~1V, enabling use in low-power circuits (e.g., battery-operated devices).
- Compact Package: SOT-23, ideal for space-constrained designs.
- Fast Switching: Suitable for load switching, power management, and DC-DC converters.
Common applications include portable electronics, power distribution, and motor control. Its low gate charge enhances energy efficiency. Always refer to the datasheet for detailed specifications.
- Low On-Resistance (RDS(on)): Typically 41 mΩ at 4.5V gate drive, minimizing power loss.
- Low Threshold Voltage (VGS(th)): ~1V, enabling use in low-power circuits (e.g., battery-operated devices).
- Compact Package: SOT-23, ideal for space-constrained designs.
- Fast Switching: Suitable for load switching, power management, and DC-DC converters.
Common applications include portable electronics, power distribution, and motor control. Its low gate charge enhances energy efficiency. Always refer to the datasheet for detailed specifications.
Features
The NTR4101PT1G is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-to-Source, VDSS)
- Current Rating: -4.1A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 1.4W (TA = 25°C)
- Package: SOT-23 (Compact, surface-mount)
- Applications: Load switching, power management, battery protection
Ideal for low-voltage, high-efficiency circuits.
- Voltage Rating: -40V (Drain-to-Source, VDSS)
- Current Rating: -4.1A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 1.4W (TA = 25°C)
- Package: SOT-23 (Compact, surface-mount)
- Applications: Load switching, power management, battery protection
Ideal for low-voltage, high-efficiency circuits.
Pinout
The NTR4101PT1G is a P-channel MOSFET in a SOT-23-3 package, featuring 3 pins with the following functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically tied to the higher potential).
3. Drain (D) – Connects to the load (output side).
Key specs:
- -30V drain-source voltage (VDS)
- -4.1A continuous drain current (ID)
- Low RDS(on) (e.g., ~36mΩ at VGS = -10V).
Commonly used for load switching, power management, and reverse polarity protection.
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically tied to the higher potential).
3. Drain (D) – Connects to the load (output side).
Key specs:
- -30V drain-source voltage (VDS)
- -4.1A continuous drain current (ID)
- Low RDS(on) (e.g., ~36mΩ at VGS = -10V).
Commonly used for load switching, power management, and reverse polarity protection.
Manufacturer
The NTR4101PT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NTR4101PT1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor's components are widely trusted in electronics design.
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NTR4101PT1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor's components are widely trusted in electronics design.
Application
The NTR4101PT1G is a P-channel MOSFET commonly used in:
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient voltage regulation.
- Automotive Systems: Low-power control circuits.
- Consumer Electronics: Power control in smartphones, tablets, etc.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient voltage regulation.
- Automotive Systems: Low-power control circuits.
- Consumer Electronics: Power control in smartphones, tablets, etc.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.
Package
The NTR4101PT1G is a P-channel MOSFET in a SOT-23-3 surface-mount package. This compact package is suitable for space-constrained applications, offering reliable performance in power management circuits. The SOT-23-3 is a common industry-standard package with three leads, ideal for low-power and portable devices.
