仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 40V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta), 52A (Tc) |
| RdsOn(Max)@IdVgs | 7.4mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 30µA |
| GateCharge(Qg)(Max)@Vgs | 7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 997pF @ 25V |
| Power-Max | 3W (Ta), 40W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
概要
Description
The NVMFD5C466NLT1G is a N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.5mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5x6 (5mm x 6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.5mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5x6 (5mm x 6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NVMFD5C466NLT1G (N-channel MOSFET, 60V, 50A, PowerDI 5x6) include:
- IRL40B209 (Infineon)
- BSC190N15NS3 (Infineon)
- CSD19536KCS (Texas Instruments)
- SI7850DP-T1-GE3 (Vishay)
These alternatives offer similar voltage/current ratings and package compatibility. Always verify datasheet specs for exact suitability.
- IRL40B209 (Infineon)
- BSC190N15NS3 (Infineon)
- CSD19536KCS (Texas Instruments)
- SI7850DP-T1-GE3 (Vishay)
These alternatives offer similar voltage/current ratings and package compatibility. Always verify datasheet specs for exact suitability.
Features
The NVMFD5C466NLT1G is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Charge (Qg): Low for reduced switching losses
- Avalanche Energy Rated: Enhances ruggedness in harsh conditions
Ideal for power management, DC-DC converters, motor control, and battery protection circuits.
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Charge (Qg): Low for reduced switching losses
- Avalanche Energy Rated: Enhances ruggedness in harsh conditions
Ideal for power management, DC-DC converters, motor control, and battery protection circuits.
Pinout
The NVMFD5C466NLT1G is a dual N-channel MOSFET in a DFN-6 (2x2mm) package with 6 pins.
Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 2): Drain terminal for the second MOSFET.
5. Pin 5 (Source 2): Source terminal for the second MOSFET.
6. Pin 6 (Gate 2): Controls the second MOSFET.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Compact DFN-6 package
This device is commonly used in power management, load switching, and DC-DC conversion.
Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 2): Drain terminal for the second MOSFET.
5. Pin 5 (Source 2): Source terminal for the second MOSFET.
6. Pin 6 (Gate 2): Controls the second MOSFET.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Compact DFN-6 package
This device is commonly used in power management, load switching, and DC-DC conversion.
Package
The NVMFD5C466NLT1G is a MOSFET in a DFN-5 (5-Lead) package. This surface-mount package is compact, suitable for high-density PCB designs, and offers efficient thermal performance. The "5" in DFN-5 indicates the number of leads. It's commonly used in power management applications.
