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NVMFS5C612NLAFT1G
+BOMNFET SO8FL 60V
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メーカーオンセミコンダクター社
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メーカー品番 #NVMFS5C612NLAFT1G
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在庫状況5082
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 250A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The NVMFS5C612NLAFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the N-channel MOSFET family and features low on-resistance (R_DS(on)) and fast switching speeds, making it suitable for power management, switching power supplies, and motor control applications.
This specific model is part of the NVMFS5 series, known for its compact size and thermal performance, which enhances reliability in demanding environments. With a maximum drain-source voltage (V_DS) typically rated around 60V and a continuous drain current (I_D) of approximately 60A, it can handle significant power loads.
The device is packaged in a surface-mounted configuration that facilitates easy integration into various electronic designs. The NVMFS5C612NLAFT1G is ideal for applications requiring efficient power conversion and management, offering low energy loss and improved system performance. Always refer to the manufacturer's datasheet for detailed specifications and thermal characteristics to ensure optimal use in your application.
This specific model is part of the NVMFS5 series, known for its compact size and thermal performance, which enhances reliability in demanding environments. With a maximum drain-source voltage (V_DS) typically rated around 60V and a continuous drain current (I_D) of approximately 60A, it can handle significant power loads.
The device is packaged in a surface-mounted configuration that facilitates easy integration into various electronic designs. The NVMFS5C612NLAFT1G is ideal for applications requiring efficient power conversion and management, offering low energy loss and improved system performance. Always refer to the manufacturer's datasheet for detailed specifications and thermal characteristics to ensure optimal use in your application.
Equivalent
The NVMFS5C612NLAFT1G is a N-channel MOSFET. Equivalent products include the FDS6910, FDS6911, and SI7144DP. When selecting equivalents, ensure they meet similar voltage, current, and power specifications. Always verify the datasheets for the specific electrical characteristics to ensure compatibility for your application.
Features
The NVMFS5C612NLAFT1G is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 60A, making it suitable for high-power circuits.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for high-speed switching, which is ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It has a robust thermal performance with a maximum junction temperature (T_J) of 150°C, ensuring reliability under demanding conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
Overall, the NVMFS5C612NLAFT1G is a versatile component for power management and conversion applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 60A, making it suitable for high-power circuits.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for high-speed switching, which is ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It has a robust thermal performance with a maximum junction temperature (T_J) of 150°C, ensuring reliability under demanding conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
Overall, the NVMFS5C612NLAFT1G is a versatile component for power management and conversion applications.
Pinout
The NVMFS5C612NLAFT1G is an N-channel MOSFET with a total of 8 pins. Its primary function is to serve as a high-speed switching device in various applications, such as power management and load switching in DC-DC converters, motor drives, and other electronic circuits.
Key features include a low R_DS(on) for efficient power handling, a high voltage rating, and fast switching capabilities, making it suitable for applications requiring efficient performance. The device is commonly used in automotive, industrial, and consumer electronics.
For detailed specifications, including maximum ratings and performance characteristics, refer to the manufacturer's datasheet.
Key features include a low R_DS(on) for efficient power handling, a high voltage rating, and fast switching capabilities, making it suitable for applications requiring efficient performance. The device is commonly used in automotive, industrial, and consumer electronics.
For detailed specifications, including maximum ratings and performance characteristics, refer to the manufacturer's datasheet.
Manufacturer
The manufacturer of the NVMFS5C612NLAFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in the design and manufacture of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient technologies and has a strong presence in the power management, analog, and mixed-signal semiconductor markets. ON Semiconductor's portfolio includes discrete devices, integrated circuits, and advanced sensors, catering to the growing demand for high-performance electronic solutions.
Application
The NVMFS5C612NLAFT1G is an N-channel MOSFET designed for low-voltage applications. Its primary application areas include power management in DC-DC converters, load switching, and motor control in consumer electronics. It's also suitable for high-efficiency power supplies, telecom equipment, and industrial automation systems. The device's low on-resistance and fast switching capabilities make it ideal for battery-operated devices and energy-efficient designs. Additionally, it can be used in automotive applications and renewable energy systems, such as solar inverters.
Package
The NVMFS5C612NLAFT1G is packaged in a SO-8 (Small Outline 8-lead) configuration, which is a compact, surface-mount package suitable for various applications in electronics.
