NVMFS5C670NT1G

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NVMFS5C670NT1G

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MOSFET N-CH 60V 17A/71A 5DFN

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  • メーカー品番 #NVMFS5C670NT1G

  • 在庫状況18012

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仕様

属性
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 17A (Ta), 71A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 7mOhm @ 11A, 10V
Vgs(th)(Max) @ Id 4V @ 53µA
Gate Charge(Qg)(Max) @ Vgs 14.4 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1035 pF @ 30 V
Power Dissipation (Max) 3.6W (Ta), 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

概要

Description

The NVMFS5C670NT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Manufactured by ON Semiconductor, this component is part of their MOSFET family. It is optimized for high efficiency in various electronic applications, such as DC-DC converters, power supplies, and motor controllers.
Key features of the NVMFS5C670NT1G include low RDS(on) for reduced conduction losses, which enhances its overall efficiency and thermal performance. The device is housed in a compact, surface-mount package, making it suitable for space-constrained applications. Additionally, it boasts robust ruggedness and reliability, ensuring long-term performance in demanding environments.
The NVMFS5C670NT1G is often selected for applications requiring high-speed switching and low on-resistance. Its design and specifications make it a versatile choice for engineers looking to optimize power efficiency and reliability in their electronic designs. For detailed technical specifications, users should refer to the manufacturer's datasheet.

Equivalent

The NVMFS5C670NT1G is an N-channel MOSFET with specific electrical characteristics. To find equivalent products, you should look for MOSFETs with similar voltage and current ratings, Rds(on), and package type. Possible equivalents might include parts from manufacturers like Infineon, Vishay, or ON Semiconductor, among others. Always refer to datasheets for detailed comparisons to ensure compatibility with your specific application requirements.

Features

The NVMFS5C670NT1G is a power MOSFET (metal-oxide-semiconductor field-effect transistor) developed by ON Semiconductor. It is designed for various applications requiring efficient power conduction and management. Here are some key features:
1. N-Channel MOSFET: It is an N-channel MOSFET, commonly used for its efficiency in high-speed switching.

2. Low On-Resistance: Offers low on-resistance, which helps in reducing power loss and improving overall efficiency in power management applications.
3. High Current Handling: Capable of handling high current levels, making it suitable for use in demanding power applications.
4. Compact Package: Available in a compact package, facilitating its use in space-constrained designs while maintaining high performance.
5. Enhanced Ruggedness: Designed to withstand high levels of electrical stress and thermal conditions, thereby enhancing its durability and reliability across various applications.
6. Wide Range of Applications: Suitable for use in automotive, industrial, and consumer electronics, especially where efficient power management is critical.
These features make the NVMFS5C670NT1G an excellent choice for efficient and reliable power management solutions.

Pinout

The NVMFS5C670NT1G is an automotive-grade N-channel MOSFET manufactured by ON Semiconductor. It features a single MOSFET in a compact SO-8FL (FlatLead) package, which generally consists of 8 pins. Designed for high-efficiency power management, this MOSFET is commonly used in applications such as DC-DC converters, motor drives, and power management in automotive systems.
Key Functions:
1. Drain (D): The main current-carrying terminal, connected to the load.
2. Gate (G): The control terminal, used to turn the MOSFET on or off by applying a voltage.
3. Source (S): The terminal connected to the ground or return path of the circuit.
The SO-8FL package typically provides low on-resistance and excellent thermal performance, making it suitable for high-power applications. The NVMFS5C670NT1G is optimized for low switching losses and high-speed operation, contributing to energy-efficient automotive designs. For specific pin configuration and detailed electrical characteristics, always refer to the official datasheet provided by the manufacturer.

Manufacturer

The NVMFS5C670NT1G is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in semiconductor solutions, providing a wide range of products including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on energy-efficient innovations, aiming to enable their customers to reduce global energy use.

Application

The NVMFS5C670NT1G is a power MOSFET used in various applications where efficient power management and switching are required. Its application areas include:
1. Automotive Systems: Used in electric vehicles and other automotive applications for power management and motor control.
2. Power Supplies: Suitable for use in DC-DC converters and switching power supplies.
3. Industrial Equipment: Utilized in motor drives, robotics, and other industrial automation systems.
4. Consumer Electronics: Found in devices needing efficient power conversion, such as laptops and battery chargers.
5. Renewable Energy Systems: Employed in solar inverters and other renewable energy applications for effective power conversion and management.
These applications leverage its low on-resistance and high-efficiency characteristics.

Package

The NVMFS5C670NT1G is a MOSFET with a Power88 package type. This package is designed for surface-mount applications, providing efficient thermal performance and compact size, making it suitable for use in high-density electronic circuits.

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