画像は参考用です
PC28F128P33TF60A
+BOM-
メーカー連合メモリ
-
メーカー品番 #PC28F128P33TF60A
-
在庫状況2035
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Tray |
| Brand | Alliance Memory |
| Product Type | NOR Flash |
| Factory Pack Quantity:Factory Pack Quantity | 300 |
| Subcategory | Memory & Data Storage |
| Delivery Restrictions | Mouser does not sell this product in your region. |
概要
Description
Key specifications include a synchronous interface for faster access times, which enhances performance in read and write operations. It supports multiple programming modes and boasts an impressive endurance of up to 100,000 program/erase cycles, ensuring longevity in demanding environments. The device also features built-in error correction capabilities and wear leveling for improved data integrity.
The PC28F128P33TF60A is packaged in a compact format, making it suitable for space-constrained designs. Its compatibility with various systems and ease of integration make it a popular choice for developers seeking robust and efficient memory solutions in their products.
Equivalent
1. Micron MT29F128G08CEC
2. Intel E28F128J3A
3. Samsung K9F1G08U0A
4. Toshiba TH58NVG4D2FL
These chips may vary in specifications, so ensure compatibility based on the application's voltage, speed, and interface requirements.
Features
1. Technology: NAND Flash technology with a 3.3V core voltage.
2. Density: 128Mbit capacity, organized as 8 bits per cell.
3. Interface: Parallel interface with a standard Command Set.
4. Access Time: Fast read access times, typically around 60 ns.
5. Block Architecture: Divided into multiple blocks for efficient data management, supporting both read and program operations.
6. Endurance: High endurance, typically supporting a minimum of 10,000 program/erase cycles per block.
7. Data Retention: Reliable data retention for a minimum of 10 years.
8. Packaging: Available in different packages, including TSOP (Thin Small Outline Package).
9. Applications: Suitable for a variety of applications, including consumer electronics, embedded systems, and automotive.
This device provides robust performance for applications requiring high-density storage and fast read capabilities.
Pinout
Key functions of the pinout include:
- Data Inputs/Outputs (DQ0-DQ7): 8-bit data bus for read and write operations.
- Address Inputs (A0-A19): 20 address lines used to access memory locations.
- Control Pins:
- WE (Write Enable): Activates write operations.
- RE (Read Enable): Activates read operations.
- CE (Chip Enable): Activates the memory chip.
- OE (Output Enable): Enables data output.
- Vcc: Power supply pin.
- GND: Ground reference.
This configuration supports various operations such as programming, erasing, and reading data, making it suitable for embedded systems and other applications requiring non-volatile memory.