仕様
| 属性 | 値 |
| Supplier | Nexperia USA Inc. |
| Package | Bulk |
| Series | PDTD123Y |
| ProductStatus | Obsolete |
| TransistorType | NPN - Pre-Biased |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50 V |
| Resistor-Base(R1) | 2.2 kOhms |
| Resistor-EmitterBase(R2) | 10 kOhms |
| DCCurrentGain(hFE)(Min)@IcVce | 70 @ 50mA, 5V |
| VceSaturation(Max)@IbIc | 300mV @ 2.5mA, 50mA |
| Current-CollectorCutoff(Max) | 500nA |
| Power-Max | 250 mW |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
