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PSMN1R4-40YLDX
+BOMMOSFET N-CH 40V 100A LFPAK56
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メーカーネクスペリアUSA株式会社
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メーカー品番 #PSMN1R4-40YLDX
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在庫状況2664
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6661 pF @ 20 V |
| Power Dissipation (Max) | 238W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Base Product Number | PSMN1R4 |
概要
Description
PSMN1R4-40YLDX refers to a specific financial product or investment strategy, likely related to a structured note or derivative instrument. The name suggests it may be associated with a maturity term of 40 years ("40Y") and could incorporate a variable yield dependent on specific market conditions ("YLDX").
Structured products like this typically combine fixed income and equity elements, offering potential returns linked to the performance of an underlying asset or index. Investors may be attracted to such products for their potential for enhanced yields compared to traditional fixed-income securities, albeit with associated risks.
Before investing, it is crucial to understand the product's structure, risks, and the underlying assets involved, as well as how market conditions can impact returns. Always consider consulting with a financial advisor to ensure alignment with your investment goals and risk tolerance.
Structured products like this typically combine fixed income and equity elements, offering potential returns linked to the performance of an underlying asset or index. Investors may be attracted to such products for their potential for enhanced yields compared to traditional fixed-income securities, albeit with associated risks.
Before investing, it is crucial to understand the product's structure, risks, and the underlying assets involved, as well as how market conditions can impact returns. Always consider consulting with a financial advisor to ensure alignment with your investment goals and risk tolerance.
Equivalent
The PSMN1R4-40YLDX is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and AON7410. Ensure to verify specifications like voltage, current rating, and on-resistance when substituting to ensure compatibility with your application.
Features
The PSMN1R4-40YLDX is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power management circuits.
2. Current Rating: The device can handle continuous drain current (ID) up to 70A, facilitating its use in high-current applications.
3. Rds(on): The on-resistance is low, typically around 4.2 mΩ, which minimizes power loss and enhances efficiency during operation.
4. Package Type: It is available in a TO-220 package, allowing for effective heat dissipation and ease of assembly.
5. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
6. Fast Switching: The MOSFET supports rapid switching speeds, ideal for applications like DC-DC converters and motor drives.
Overall, the PSMN1R4-40YLDX is optimized for efficiency and versatility in power electronics design.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power management circuits.
2. Current Rating: The device can handle continuous drain current (ID) up to 70A, facilitating its use in high-current applications.
3. Rds(on): The on-resistance is low, typically around 4.2 mΩ, which minimizes power loss and enhances efficiency during operation.
4. Package Type: It is available in a TO-220 package, allowing for effective heat dissipation and ease of assembly.
5. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
6. Fast Switching: The MOSFET supports rapid switching speeds, ideal for applications like DC-DC converters and motor drives.
Overall, the PSMN1R4-40YLDX is optimized for efficiency and versatility in power electronics design.
Pinout
The PSMN1R4-40YLDX is a N-channel MOSFET with a pin count of 4. Its primary functions are to act as a switch or amplifier in electronic circuits, often used in power management applications. The device features low on-resistance and high-speed switching capabilities, making it suitable for applications like power supplies, motor drives, and DC-DC converters.
The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground (in low-side switching) or the positive supply (in high-side switching).
4. Drain-Source (D-S) connection: Used for thermal management and electrical characteristics.
Always refer to the specific datasheet for detailed electrical characteristics and recommended operating conditions.
The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground (in low-side switching) or the positive supply (in high-side switching).
4. Drain-Source (D-S) connection: Used for thermal management and electrical characteristics.
Always refer to the specific datasheet for detailed electrical characteristics and recommended operating conditions.
Manufacturer
The PSMN1R4-40YLDX is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET components, focusing on high-volume production and high-quality semiconductor devices.
Nexperia was formed in 2017 as a spin-off from NXP Semiconductors and has since established itself as a leader in the semiconductor industry, providing essential components for various applications, including automotive, industrial, and consumer electronics. The company emphasizes efficiency and reliability in its products, catering to the increasing demand for energy-efficient solutions in modern electronic designs.
Nexperia was formed in 2017 as a spin-off from NXP Semiconductors and has since established itself as a leader in the semiconductor industry, providing essential components for various applications, including automotive, industrial, and consumer electronics. The company emphasizes efficiency and reliability in its products, catering to the increasing demand for energy-efficient solutions in modern electronic designs.
Application
PSMN1R4-40YLDX is a type of high-performance power semiconductor, primarily used in applications involving power management and conversion. Key application areas include renewable energy systems (like solar inverters and wind turbines), electric vehicles (for battery management and drive control), industrial motor drives, and power supplies for data centers. Its efficiency in handling high voltages and currents makes it suitable for enhancing energy efficiency and reliability in various electronic devices and systems.
Package
The PSMN1R4-40YLDX is packaged in a TO-220 package type. This package is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks.
