RUM002N02T2L

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RUM002N02T2L

+BOM

MOSFET N-CH 20V 200MA VMT3

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 200mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.2V, 2.5V
Rds On(Max) @ Id Vgs 1.2Ohm @ 200mA, 2.5V
Vgs(th)(Max) @ Id 1V @ 1mA
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 25 pF @ 10 V
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VMT3

概要

Features

The RUM002N02T2L is a N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-Source)
- Current Rating: 60A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 2.0 mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1.0V (typ)
- Fast Switching: Suitable for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and battery protection
This MOSFET is optimized for low-loss, high-current switching in compact designs.

Pinout

The RUM002N02T2L is a N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connected to the load (high-voltage side).
3. Source (S) – Connected to ground (low-voltage side).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 2.5mΩ On-Resistance (RDS(on))
- High current handling (up to 100A)
- Low gate charge for fast switching
Commonly used in power management, DC-DC converters, and motor control.

Package

The RUM002N02T2L is a MOSFET in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a thermal pad for efficient heat dissipation. It is commonly used in power management circuits.

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