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S29GL128P10TFI010
+BOMIC FLASH 128MBIT PARALLEL 56TSOP
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メーカーオーラセミ社
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メーカー品番 #S29GL128P10TFI010
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データシート S29GL128P10TFI010 DataSheet
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パッケージ TSOP-56
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在庫状況3712
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Bulk,Tray |
| Series | GL-P |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (16M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 100ns |
| Access Time | 100 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概要
Description
Key features include a high endurance of 100,000 program/erase cycles per sector typical, a robust data retention period of 20 years, and a low power consumption due to its standby and automatic sleep modes. The S29GL128P10TFI010 also includes features like hardware reset (RESET# pin), write protect (WP# pin), and a software data protection mechanism. It is ideal for applications like automotive systems, networking, and telecommunications where reliable and efficient storage solutions are required. The device is packaged in a 56-pin TSOP package, facilitating easy integration into various circuit designs.
Equivalent
1. Micron MT28F128J3
2. Winbond W29GL128
3. Macronix MX29LV128
4. SST (Microchip) SST39VF1601
These alternatives may have different performance characteristics or package types, so it's essential to compare specifications closely to ensure suitability for your application.
Features
1. Memory Architecture: It uses a versatile, uniform 128KB sector architecture for seamless erase and program operations.
2. Page Programming: Supports page programming up to 256 bytes, optimizing data throughput.
3. Access Time: Offers a random access time of 110 ns, facilitating quick data retrieval.
4. Voltage Range: Operates at a single voltage range of 2.7V to 3.6V, suitable for low-power applications.
5. Data Retention and Endurance: Ensures data retention for 20 years with 100,000 program/erase cycles per sector, enhancing reliability.
6. Interface: Features a standard parallel NOR interface for easy integration with microcontrollers and processors.
7. Security: Includes a hardware sector protection feature to prevent accidental programming/erasure.
8. Temperature Range: Designed to operate within an industrial temperature range of -40°C to 85°C.
These features make the S29GL128P10TFI010 ideal for various embedded applications, including automotive, industrial, and consumer electronics.
Pinout
This NOR Flash memory chip is primarily used for non-volatile storage in embedded systems and applications requiring high-speed and reliable data storage. It features a standard asynchronous read operation, as well as program and erase commands, with sector and bulk erase capabilities. It supports a 3.0-volt single power supply for read, program, and erase operations. The S29GL128P series offers a fast access time—typically 90 nanoseconds—and supports processes like booting or executing code directly from the flash memory. It is often employed in telecommunications, automotive, networking, and consumer electronics, where reliable and robust flash memory is essential.
Manufacturer
Application
1. Embedded Systems: For storing firmware and configuration data.
2. Consumer Electronics: Used in devices like set-top boxes, printers, and digital cameras.
3. Telecommunications: Essential in routers and switches for storing network configurations.
4. Industrial Automation: For data logging and storage of operational software.
5. Automotive: Used in infotainment systems and electronic control units.
Its high-speed programming and reliability make it suitable for applications demanding rapid data access and durability.