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SBC807-40LT1G
+BOMTRANS PNP 45V 0.5A SOT23-3
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メーカーオンセミコンダクター社
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メーカー品番 #SBC807-40LT1G
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データシート SBC807-40LT1G DataSheet
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パッケージ TO-236-3
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在庫状況8927
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 45 V |
| VceSaturation(Max)@IbIc | 700mV @ 50mA, 500mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 250 @ 100mA, 1V |
| Power-Max | 300 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The SBC807-40LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured by ON Semiconductor, it is housed in a small SOT-23 package, making it suitable for compact electronic designs. The transistor features a collector-emitter voltage (V_CEO) of -40V and a collector current (I_C) of -500mA, allowing it to handle moderate power levels.
Key features include a low saturation voltage and high current gain (h_FE), enhancing its efficiency in signal amplification. The device operates efficiently over a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environmental conditions. Its small form factor and robust performance make it ideal for use in portable devices, consumer electronics, and other applications where space is limited.
The SBC807-40LT1G is often selected for its balance between performance and size, offering designers flexibility in creating efficient circuits without compromising on reliability or functionality.
Key features include a low saturation voltage and high current gain (h_FE), enhancing its efficiency in signal amplification. The device operates efficiently over a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environmental conditions. Its small form factor and robust performance make it ideal for use in portable devices, consumer electronics, and other applications where space is limited.
The SBC807-40LT1G is often selected for its balance between performance and size, offering designers flexibility in creating efficient circuits without compromising on reliability or functionality.
Equivalent
The SBC807-40LT1G is a PNP bipolar junction transistor. Equivalent products include:
1. BC807-40: A general-purpose PNP transistor with similar voltage and current ratings.
2. BC856B: Another PNP transistor with comparable specifications.
3. 2N3906: A widely used PNP transistor that can often serve as an alternative, though check specific ratings.
4. MMBT3906: The surface-mount version of the 2N3906.
Always verify electrical characteristics and pin configurations to ensure compatibility.
1. BC807-40: A general-purpose PNP transistor with similar voltage and current ratings.
2. BC856B: Another PNP transistor with comparable specifications.
3. 2N3906: A widely used PNP transistor that can often serve as an alternative, though check specific ratings.
4. MMBT3906: The surface-mount version of the 2N3906.
Always verify electrical characteristics and pin configurations to ensure compatibility.
Features
The SBC807-40LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Package Type: SOT-23, which is a small, surface-mount package suitable for compact PCB designs.
2. Collector-Emitter Voltage (V_ceo): Rated at 40 V, indicating the maximum voltage the transistor can withstand between collector and emitter.
3. Collector Current (I_c): Rated at 500 mA, allowing for moderate current applications.
4. Power Dissipation (P_d): Up to 225 mW, which is the maximum power the device can dissipate.
5. DC Current Gain (h_FE): Typically in the range of 100 to 250, providing adequate amplification capabilities.
6. Transition Frequency (f_T): Approximately 100 MHz, supporting high-speed switching applications.
7. Operating Temperature Range: -55°C to +150°C, allowing operation in a wide range of environmental conditions.
These features make the SBC807-40LT1G suitable for various consumer electronics, signal processing, and small-signal switching tasks.
1. Package Type: SOT-23, which is a small, surface-mount package suitable for compact PCB designs.
2. Collector-Emitter Voltage (V_ceo): Rated at 40 V, indicating the maximum voltage the transistor can withstand between collector and emitter.
3. Collector Current (I_c): Rated at 500 mA, allowing for moderate current applications.
4. Power Dissipation (P_d): Up to 225 mW, which is the maximum power the device can dissipate.
5. DC Current Gain (h_FE): Typically in the range of 100 to 250, providing adequate amplification capabilities.
6. Transition Frequency (f_T): Approximately 100 MHz, supporting high-speed switching applications.
7. Operating Temperature Range: -55°C to +150°C, allowing operation in a wide range of environmental conditions.
These features make the SBC807-40LT1G suitable for various consumer electronics, signal processing, and small-signal switching tasks.
Pinout
The SBC807-40LT1G is a PNP bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching applications. It typically comes in a small SOT-23 surface-mount package, which features three pins. The pin configuration is as follows:
1. Pin 1 (Base): This is the control terminal for the transistor. A small current applied to the base allows for control over a larger current flow between the collector and emitter.
2. Pin 2 (Emitter): This terminal emits carriers (holes in the case of a PNP transistor). It is usually connected to ground in typical PNP transistor configurations.
3. Pin 3 (Collector): This is the terminal where the main current exits the transistor. It is connected to the load in a circuit.
The SBC807-40LT1G is designed for low-power applications and has a maximum collector current rating of 500 mA and a maximum collector-emitter voltage of 40 V. It is ideal for use in switching and amplification applications.
1. Pin 1 (Base): This is the control terminal for the transistor. A small current applied to the base allows for control over a larger current flow between the collector and emitter.
2. Pin 2 (Emitter): This terminal emits carriers (holes in the case of a PNP transistor). It is usually connected to ground in typical PNP transistor configurations.
3. Pin 3 (Collector): This is the terminal where the main current exits the transistor. It is connected to the load in a circuit.
The SBC807-40LT1G is designed for low-power applications and has a maximum collector current rating of 500 mA and a maximum collector-emitter voltage of 40 V. It is ideal for use in switching and amplification applications.
Manufacturer
The SBC807-40LT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a global leader in the design and manufacture of semiconductors and other electronics components. The company focuses on energy-efficient innovations, supplying products for various sectors, including automotive, industrial, cloud power, consumer electronics, and more. onsemi is known for its commitment to sustainability and providing advanced technology solutions that enhance performance and efficiency in electronic systems.
Application
The SBC807-40LT1G is a PNP bipolar junction transistor commonly used in various electronic applications. Its primary application areas include amplification and switching circuits due to its capability to handle low to moderate power levels. It is often used in:
1. Signal amplification in audio and RF circuits.
2. Switching applications in industrial and consumer electronics.
3. Voltage regulation and stabilization circuits.
4. Driver circuits for relays, LEDs, and other low-power devices.
5. General-purpose amplification in hobbyist and DIY projects.
Its compact SOT-23 package makes it suitable for space-constrained designs in portable and miniaturized devices.
1. Signal amplification in audio and RF circuits.
2. Switching applications in industrial and consumer electronics.
3. Voltage regulation and stabilization circuits.
4. Driver circuits for relays, LEDs, and other low-power devices.
5. General-purpose amplification in hobbyist and DIY projects.
Its compact SOT-23 package makes it suitable for space-constrained designs in portable and miniaturized devices.
Package
The SBC807-40LT1G is packaged in a SOT-23 (Small Outline Transistor) package, which is a small, surface-mount package commonly used for transistors and diodes.
