仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 45V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The SBC847BDW1T1G is a dual NPN bipolar junction transistor (BJT) encapsulated in a compact SOT-363 surface-mount package. It is designed for general-purpose amplification and switching applications. This transistor features low current and voltage characteristics, making it suitable for high-density and space-constrained electronic designs. Its typical collector-emitter voltage (Vce) is 45V, and it can handle a collector current (Ic) of up to 100 mA.
Key attributes include a DC current gain (hFE) range of 200 to 450, enabling efficient signal amplification. The SBC847BDW1T1G is manufactured by ON Semiconductor, a reputable provider of semiconductor solutions. It is widely used in consumer electronics, communication devices, and other applications requiring low-power transistors. The device's small footprint and dual transistor configuration make it advantageous for circuit designs needing multiple transistors in limited space. Additionally, its lead-free and RoHS-compliant nature ensures it meets environmental standards for electronic components.
Key attributes include a DC current gain (hFE) range of 200 to 450, enabling efficient signal amplification. The SBC847BDW1T1G is manufactured by ON Semiconductor, a reputable provider of semiconductor solutions. It is widely used in consumer electronics, communication devices, and other applications requiring low-power transistors. The device's small footprint and dual transistor configuration make it advantageous for circuit designs needing multiple transistors in limited space. Additionally, its lead-free and RoHS-compliant nature ensures it meets environmental standards for electronic components.
Equivalent
The SBC847BDW1T1G is a dual NPN general-purpose transistor. Equivalent products include the BC847 series (e.g., BC847B), BC817 series, and 2N3904 in similar configurations, though pinouts and packaging may vary. Always check datasheets for exact specifications and compatibility before substituting to ensure they meet the required electrical and thermal characteristics for your application.
Features
The SBC847BDW1T1G is a dual NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Transistor Configuration: It consists of two NPN transistors in a single package, allowing for compact circuit designs.
2. Collector-Emitter Voltage (Vceo): It has a maximum voltage rating of 45V.
3. Collector Current (Ic): The maximum continuous collector current is 500mA, making it suitable for moderate power applications.
4. Power Dissipation: The device can handle a power dissipation of up to 300mW.
5. DC Current Gain (hFE): The transistor features a current gain range typically between 100 to 800, providing decent amplification capabilities.
6. Package Type: It is available in a SOT-363 surface-mount package, which is compact and ideal for space-constrained applications.
7. Operating Temperature: It is designed to operate within a temperature range of -55°C to +150°C, suitable for various environmental conditions.
These features make the SBC847BDW1T1G a versatile choice for small-signal applications where size and power efficiency are critical.
1. Transistor Configuration: It consists of two NPN transistors in a single package, allowing for compact circuit designs.
2. Collector-Emitter Voltage (Vceo): It has a maximum voltage rating of 45V.
3. Collector Current (Ic): The maximum continuous collector current is 500mA, making it suitable for moderate power applications.
4. Power Dissipation: The device can handle a power dissipation of up to 300mW.
5. DC Current Gain (hFE): The transistor features a current gain range typically between 100 to 800, providing decent amplification capabilities.
6. Package Type: It is available in a SOT-363 surface-mount package, which is compact and ideal for space-constrained applications.
7. Operating Temperature: It is designed to operate within a temperature range of -55°C to +150°C, suitable for various environmental conditions.
These features make the SBC847BDW1T1G a versatile choice for small-signal applications where size and power efficiency are critical.
Pinout
The SBC847BDW1T1G is a dual NPN bipolar junction transistor (BJT). It is typically used for amplification and switching applications. This component is housed in a small SOT-363 surface-mount package, which features six pins. Each transistor within the package shares connections for the emitter, base, and collector. Here's a brief breakdown of the pin functions:
1. Pin 1 - Collector of Transistor Q1
2. Pin 2 - Base of Transistor Q1
3. Pin 3 - Emitter of Transistor Q1
4. Pin 4 - Emitter of Transistor Q2
5. Pin 5 - Base of Transistor Q2
6. Pin 6 - Collector of Transistor Q2
This configuration allows designers to utilize the transistors in various circuit applications where a compact and efficient solution is required.
1. Pin 1 - Collector of Transistor Q1
2. Pin 2 - Base of Transistor Q1
3. Pin 3 - Emitter of Transistor Q1
4. Pin 4 - Emitter of Transistor Q2
5. Pin 5 - Base of Transistor Q2
6. Pin 6 - Collector of Transistor Q2
This configuration allows designers to utilize the transistors in various circuit applications where a compact and efficient solution is required.
Manufacturer
The SBC847BDW1T1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor supplier that focuses on intelligent power and sensing technologies. The company provides advanced energy-efficient solutions for automotive, industrial, cloud, and IoT applications. It is known for its comprehensive portfolio of semiconductor products, including power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. Onsemi aims to help its customers reduce global energy use, enable the implementation of technology infrastructure, and improve automotive safety.
Application
The SBC847BDW1T1G is a dual NPN bipolar junction transistor commonly used in various electronic applications. Key application areas include:
1. Switching Circuits: Used in digital logic circuits requiring high-speed switching.
2. Amplification: Suitable for low-power amplification tasks in audio and signal processing.
3. Signal Processing: Utilized in RF and IF signal processing circuits.
4. Consumer Electronics: Found in devices like televisions, radios, and other home appliances.
5. Industrial Automation: Used in control systems and automation equipment for signal amplification and switching.
6. Communication Systems: Applied in wireless communication for switching and signal amplification.
These transistors offer reliability and efficiency, making them versatile in numerous electronic circuits.
1. Switching Circuits: Used in digital logic circuits requiring high-speed switching.
2. Amplification: Suitable for low-power amplification tasks in audio and signal processing.
3. Signal Processing: Utilized in RF and IF signal processing circuits.
4. Consumer Electronics: Found in devices like televisions, radios, and other home appliances.
5. Industrial Automation: Used in control systems and automation equipment for signal amplification and switching.
6. Communication Systems: Applied in wireless communication for switching and signal amplification.
These transistors offer reliability and efficiency, making them versatile in numerous electronic circuits.
Package
The SBC847BDW1T1G is a dual NPN bipolar junction transistor housed in a SOT-363 (SC-88) surface-mount package.
