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SI2301BDS-T1-E3
+BOMMOSFET P-CH 20V 2.2A SOT23-3
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メーカービシェイ・シリコニクス
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メーカー品番 #SI2301BDS-T1-E3
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データシート SI2301BDS-T1-E3 DataSheet
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パッケージ SOT23-3
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在庫状況2067
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 100mOhm @ 2.8A, 4.5V |
| Vgs(th)(Max)@Id | 950mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 375 pF @ 6 V |
| PowerDissipation(Max) | 700mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概要
Description
"Introduction to SI2301BDS-T1-E3" likely refers to a course or module code, possibly related to data science or a technical field, given the "BDS" acronym which might stand for "Bachelor of Data Science" or similar. The format suggests the course is part of a structured academic program.
The course introduction would typically provide an overview of the topics covered, learning objectives, and methodologies used. It might outline foundational concepts in data science, statistical analysis, and computational techniques. Students could expect to learn about data collection, cleaning, visualization, and interpretation, employing tools like Python or R. The course might also cover machine learning basics, data modeling, and ethical considerations in data usage.
The "T1-E3" component could indicate the term and section of the course, suggesting multiple sections or levels within the program. Enrolled students would likely engage in lectures, practical sessions, and assessments aimed at developing critical analytical skills applicable in various industries. Please consult the official course syllabus or program guide for specific details.
The course introduction would typically provide an overview of the topics covered, learning objectives, and methodologies used. It might outline foundational concepts in data science, statistical analysis, and computational techniques. Students could expect to learn about data collection, cleaning, visualization, and interpretation, employing tools like Python or R. The course might also cover machine learning basics, data modeling, and ethical considerations in data usage.
The "T1-E3" component could indicate the term and section of the course, suggesting multiple sections or levels within the program. Enrolled students would likely engage in lectures, practical sessions, and assessments aimed at developing critical analytical skills applicable in various industries. Please consult the official course syllabus or program guide for specific details.
Equivalent
The SI2301BDS-T1-E3 is a MOSFET, and its equivalents include:
1. AO3401 from Alpha & Omega Semiconductor.
2. IRLML6401 from Infineon Technologies (formerly International Rectifier).
3. BSS123 from Nexperia.
4. 2N7002 from ON Semiconductor.
These alternatives are similar in terms of voltage and current ratings, but it's important to verify the specifications and package compatibility for your specific application before substituting.
1. AO3401 from Alpha & Omega Semiconductor.
2. IRLML6401 from Infineon Technologies (formerly International Rectifier).
3. BSS123 from Nexperia.
4. 2N7002 from ON Semiconductor.
These alternatives are similar in terms of voltage and current ratings, but it's important to verify the specifications and package compatibility for your specific application before substituting.
Features
The SI2301BDS-T1-E3 is a P-channel MOSFET commonly used in various electronic applications. Key features include:
1. P-Channel MOSFET: Allows it to switch or amplify signals, useful for load switching applications.
2. Low On-Resistance: Offers efficient current flow with minimal power loss, enhancing energy efficiency.
3. SOT-23 Package: Compact surface-mount package ideal for space-constrained applications.
4. Maximum Drain-Source Voltage (V_DS): Typically around -20V, suitable for low-voltage applications.
5. Continuous Drain Current (I_D): Generally supports moderate current levels, commonly around -2.3A.
6. Fast Switching Speed: Enhances performance in high-frequency applications.
7. Thermal Performance: Good heat dissipation properties, vital for maintaining performance under load.
8. RoHS Compliant: Meets environmental standards for hazardous substances.
9. Applications: Ideal for battery-powered devices, DC-DC converters, and load switch applications.
These features make the SI2301BDS-T1-E3 a versatile and efficient component for modern electronic circuits.
1. P-Channel MOSFET: Allows it to switch or amplify signals, useful for load switching applications.
2. Low On-Resistance: Offers efficient current flow with minimal power loss, enhancing energy efficiency.
3. SOT-23 Package: Compact surface-mount package ideal for space-constrained applications.
4. Maximum Drain-Source Voltage (V_DS): Typically around -20V, suitable for low-voltage applications.
5. Continuous Drain Current (I_D): Generally supports moderate current levels, commonly around -2.3A.
6. Fast Switching Speed: Enhances performance in high-frequency applications.
7. Thermal Performance: Good heat dissipation properties, vital for maintaining performance under load.
8. RoHS Compliant: Meets environmental standards for hazardous substances.
9. Applications: Ideal for battery-powered devices, DC-DC converters, and load switch applications.
These features make the SI2301BDS-T1-E3 a versatile and efficient component for modern electronic circuits.
Pinout
The SI2301BDS-T1-E3 is an N-channel MOSFET. It typically comes in a small package with a total of three pins. The primary function of this MOSFET is to manage power and control voltage in electronic circuits, often utilized in switching applications.
Here is a concise breakdown of its pin configuration:
1. Source (S): This pin acts as the source terminal for the MOSFET, where electrons enter the channel.
2. Gate (G): This terminal is used to control the MOSFET's conductivity. A voltage applied here enables the flow of electricity between the Source and Drain.
3. Drain (D): This terminal is where the charge carriers exit the MOSFET channel.
The SI2301BDS-T1-E3 is designed for low-voltage applications and is commonly used in power management systems, DC-DC converters, and load switches due to its efficient switching capabilities.
Here is a concise breakdown of its pin configuration:
1. Source (S): This pin acts as the source terminal for the MOSFET, where electrons enter the channel.
2. Gate (G): This terminal is used to control the MOSFET's conductivity. A voltage applied here enables the flow of electricity between the Source and Drain.
3. Drain (D): This terminal is where the charge carriers exit the MOSFET channel.
The SI2301BDS-T1-E3 is designed for low-voltage applications and is commonly used in power management systems, DC-DC converters, and load switches due to its efficient switching capabilities.
Manufacturer
The SI2301BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in manufacturing discrete semiconductors and passive electronic components. Founded in 1962, it has grown to become one of the largest suppliers of these components in the electronics industry. Vishay's products are used in a wide range of industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical sectors. The company focuses on providing high-quality and reliable components, such as MOSFETs, diodes, resistors, capacitors, and inductors, which are essential for various electronic devices and systems.
Application
The SI2301BDS-T1-E3 is a P-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Useful in power switching and voltage regulation circuits to enhance energy efficiency.
2. Load Switches: Ideal for controlling power to peripherals or subsystems in battery-operated devices.
3. DC-DC Converters: Often employed in buck or boost converters for efficient power conversion.
4. Battery Protection: Utilized in battery management systems to safeguard against overcurrent and short circuits.
5. Consumer Electronics: Used in devices like smartphones, tablets, and laptops for managing power delivery.
These applications benefit from the MOSFET's low on-resistance and efficient switching capabilities.
1. Power Management: Useful in power switching and voltage regulation circuits to enhance energy efficiency.
2. Load Switches: Ideal for controlling power to peripherals or subsystems in battery-operated devices.
3. DC-DC Converters: Often employed in buck or boost converters for efficient power conversion.
4. Battery Protection: Utilized in battery management systems to safeguard against overcurrent and short circuits.
5. Consumer Electronics: Used in devices like smartphones, tablets, and laptops for managing power delivery.
These applications benefit from the MOSFET's low on-resistance and efficient switching capabilities.
Package
The SI2301BDS-T1-E3 is typically available in a SOT-23 package. This is a small, surface-mount package commonly used for housing semiconductor devices.
