画像は参考用です
SI2305-TP-HF
+BOMInterface
-
メーカーMCC(マイクロビジネスコンポーネント)
-
メーカー品番 #SI2305-TP-HF
-
データシート SI2305-TP-HF DataSheet
-
在庫状況13573
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 1.8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 4 V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2305 |
概要
Description
1. Subject Focus: The "SI" prefix often denotes a focus on Systems Integration or a related field, while "TP" might indicate a thematic or project-based component, and "HF" could suggest a focus on Human Factors.
2. Course Content: The course might cover topics such as the integration of complex systems, understanding human interaction with technology, ergonomic design principles, project management in technology environments, or the impact of human factors on system performance.
3. Learning Objectives: Students could expect to gain skills in designing user-friendly systems, understanding the psychological and physiological aspects of human-system interaction, and applying these principles to real-world projects.
4. Assessment: Evaluation might include project work, exams, and participation in discussions or labs, focusing on both theoretical knowledge and practical application.
For precise details, check the official course syllabus or contact the offering institution.
Equivalent
Features
1. P-Channel MOSFET: This component uses a P-channel, which makes it suitable for high-side switching applications.
2. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of around -2.8A, supporting moderate power loads.
3. Low On-Resistance: It offers low on-resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
4. SOT-23 Package: The MOSFET comes in a compact SOT-23 package, making it ideal for use in space-constrained designs.
5. High-Speed Switching: It supports high-speed switching, suitable for applications requiring rapid on/off cycles.
6. RoHS Compliant: The SI2305-TP-HF is compliant with RoHS standards, reflecting its environmentally friendly design.
7. Thermal Performance: Efficient thermal characteristics allow it to operate reliably under varying temperature conditions.
This component is widely used in power management, load switching, and signal processing applications due to its compact size and reliable performance.
Pinout
1. Gate (G): This is the control terminal that modulates the current flow between the source and drain. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): This terminal is where the carriers (holes for a P-channel MOSFET) enter the transistor. It is typically connected to the more positive voltage in a circuit.
3. Drain (D): This is the terminal where the carriers exit the transistor. The current flows from source to drain in a P-channel MOSFET when it is turned on.
The SI2305-TP-HF is commonly used for switching applications due to its small size and efficient performance in low-voltage environments.