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SI2305CDS-T1-GE3
+BOMMOSFET P-CH 8V 5.8A SOT23-3
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メーカービシェイ・シリコニクス
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メーカー品番 #SI2305CDS-T1-GE3
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データシート SI2305CDS-T1-GE3 DataSheet
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パッケージ SOT-23-3
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在庫状況2751
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain(Id) @ 25°C | 5.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 35mOhm @ 4.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 960 pF @ 4 V |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概要
Description
"Introduction to SI2305CDS-T1-GE3" likely refers to a course or module that focuses on a specific subject, possibly within the realm of computer science, data science, or a related field, as suggested by the alphanumeric code. Without specific context, it's difficult to provide precise details, but such courses generally aim to introduce the foundational concepts and skills necessary to understand the subject matter. Topics may include theoretical concepts, practical applications, and relevant tools or technologies. The course may involve lectures, hands-on labs, projects, and assessments to evaluate understanding and proficiency.
The course might be part of a larger curriculum and could cater to students who are new to the subject or those who seek to deepen their knowledge. It is designed to build a solid foundation, preparing students for advanced studies or professional applications. To gain more insight, it would be ideal to consult the course syllabus, instructor, or institution offering it for specifics like learning objectives, prerequisites, and course structure.
The course might be part of a larger curriculum and could cater to students who are new to the subject or those who seek to deepen their knowledge. It is designed to build a solid foundation, preparing students for advanced studies or professional applications. To gain more insight, it would be ideal to consult the course syllabus, instructor, or institution offering it for specifics like learning objectives, prerequisites, and course structure.
Equivalent
The SI2305CDS-T1-GE3 is a P-channel MOSFET. Equivalent products include:
1. PMV20XN - Nexperia
2. FDN5630P - ON Semiconductor
3. IRLML6402 - Infineon Technologies
4. BSS84 - Vishay
5. 2N7002P - Diodes Incorporated
These components have similar specifications but always verify parameters and footprints for compatibility.
1. PMV20XN - Nexperia
2. FDN5630P - ON Semiconductor
3. IRLML6402 - Infineon Technologies
4. BSS84 - Vishay
5. 2N7002P - Diodes Incorporated
These components have similar specifications but always verify parameters and footprints for compatibility.
Features
The SI2305CDS-T1-GE3 is a P-channel MOSFET known for its efficiency and compact design, suitable for a variety of electronic applications. Here are its key features:
1. Type and Polarity: It's a P-channel MOSFET, meaning it conducts when a negative voltage is applied to the gate.
2. Voltage and Current Ratings: Typically features a maximum drain-source voltage (V_DS) and continuous drain current (I_D) suitable for low-power applications.
3. Threshold Voltage: Low gate threshold voltage, allowing it to be driven by low voltage levels.
4. Package Type: Comes in a compact, surface-mount package, usually SOT-23, facilitating easy integration into PCBs.
5. R_DS(on): Low on-resistance, which minimizes power loss and improves efficiency.
6. Applications: Ideal for battery-powered devices, load switching, power management, and DC-DC converters.
7. Thermal Performance: Efficient thermal management due to its design, suitable for temperature-sensitive applications.
8. ESD Protection: Often includes built-in protection against electrostatic discharge, enhancing reliability.
This combination of features makes the SI2305CDS-T1-GE3 a versatile component in modern electronic circuit design.
1. Type and Polarity: It's a P-channel MOSFET, meaning it conducts when a negative voltage is applied to the gate.
2. Voltage and Current Ratings: Typically features a maximum drain-source voltage (V_DS) and continuous drain current (I_D) suitable for low-power applications.
3. Threshold Voltage: Low gate threshold voltage, allowing it to be driven by low voltage levels.
4. Package Type: Comes in a compact, surface-mount package, usually SOT-23, facilitating easy integration into PCBs.
5. R_DS(on): Low on-resistance, which minimizes power loss and improves efficiency.
6. Applications: Ideal for battery-powered devices, load switching, power management, and DC-DC converters.
7. Thermal Performance: Efficient thermal management due to its design, suitable for temperature-sensitive applications.
8. ESD Protection: Often includes built-in protection against electrostatic discharge, enhancing reliability.
This combination of features makes the SI2305CDS-T1-GE3 a versatile component in modern electronic circuit design.
Pinout
The SI2305CDS-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a small SOT-23 package, which has 3 pins. The pin configuration and functions are as follows:
1. Pin 1 (Gate): This pin is used to turn the MOSFET on and off by applying a voltage to it. It controls the flow of electrical current between the source and drain.
2. Pin 2 (Source): This is the terminal where the current enters the MOSFET. In P-channel MOSFETs, the source is typically connected to the higher voltage side of the circuit.
3. Pin 3 (Drain): This is the terminal where the current exits the MOSFET. It is connected to the load in the circuit.
This MOSFET is used in various applications requiring efficient switching and amplification, benefiting from its low on-resistance and high-speed switching capabilities.
1. Pin 1 (Gate): This pin is used to turn the MOSFET on and off by applying a voltage to it. It controls the flow of electrical current between the source and drain.
2. Pin 2 (Source): This is the terminal where the current enters the MOSFET. In P-channel MOSFETs, the source is typically connected to the higher voltage side of the circuit.
3. Pin 3 (Drain): This is the terminal where the current exits the MOSFET. It is connected to the load in the circuit.
This MOSFET is used in various applications requiring efficient switching and amplification, benefiting from its low on-resistance and high-speed switching capabilities.
Manufacturer
The SI2305CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company was founded in 1962 and is headquartered in Malvern, Pennsylvania, USA. Vishay's product portfolio includes a wide range of components such as diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors, among others. These components are used in various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is known for its focus on innovation and quality, providing essential components that are critical to the functioning of electronic systems.
Application
The SI2305CDS-T1-GE3 is a dual N-channel MOSFET commonly used in various electronic applications. Its typical application areas include power management systems, DC-DC converters, load switching, and motor drives. It is also utilized in battery protection circuits, power supply designs, and as a switch in consumer electronics due to its low on-resistance and high efficiency. The MOSFET's compact design and robust performance make it suitable for applications requiring efficient power handling and space-saving solutions.
Package
The SI2305CDS-T1-GE3 is a MOSFET transistor packaged in a compact SOT-23 form factor, commonly used for surface-mount applications in electronic circuits.
