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SI2323DS
+BOMMOSFET P-CH 20V 3.7A SOT23-3
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メーカーUMW社
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メーカー品番 #SI2323DS
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データシート SI2323DS DataSheet
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在庫状況10498
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
Students in such a course could expect to engage in both theoretical learning and practical exercises, such as analyzing datasets, building predictive models, and understanding data-driven decision-making processes. The course might also introduce software tools and platforms commonly used in the industry.
The primary aim would be to equip students with the skills necessary to analyze and interpret complex data, enabling them to derive actionable insights and contribute to data-driven strategies in various business or research contexts. For specific details, one would need to refer to the course syllabus or contact the academic institution offering it.
Equivalent
1. Philips/NXP BSS84
2. Fairchild Semiconductor FDN5618P
3. ON Semiconductor NTR4003N
4. Infineon BSS84P
5. Diodes Incorporated ZXMP3A13G4
Ensure compatibility by comparing key parameters such as voltage, current ratings, Rds(on), and package type before substituting.
Features
1. Low On-Resistance: It offers low on-state resistance, enhancing efficiency by minimizing power loss during conduction.
2. Compact Package: Available in a small SOT-23 package, it is ideal for space-constrained applications.
3. High-Speed Switching: The device supports fast switching speeds, making it suitable for applications that require quick response times.
4. Low Gate Threshold Voltage: It operates effectively with a low gate-source voltage, which is advantageous for low-voltage circuits.
5. Wide Range of Operating Voltages: The SI2323DS can handle a broad range of voltages, enhancing its versatility in different electronic applications.
6. Thermal Performance: Designed to manage heat dissipation efficiently, it ensures reliable performance even under high-load conditions.
These features make the SI2323DS suitable for use in various applications, such as load switching, power management, and signal processing in portable and handheld devices.
Pinout
1. Pin 1 (Gate): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Pin 2 (Source): The source pin is where the charge carriers (holes for a P-channel MOSFET) enter the transistor. It is typically connected to the higher voltage side of the circuit.
3. Pin 3 (Drain): The drain pin is where the charge carriers exit the transistor. It is usually connected to the load or the ground side of the circuit.
The SI2323DS is used in applications requiring fast switching and efficient power management, often in portable devices or other consumer electronics. Its low on-resistance and fast switching speed make it suitable for load switching and DC-DC conversion applications.