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SI2325DS-T1-GE3
+BOMMOSFET P-CH 150V 530MA SOT23-3
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メーカービシェイ・シリコニクス
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メーカー品番 #SI2325DS-T1-GE3
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データシート SI2325DS-T1-GE3 DataSheet
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在庫状況8504
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI2325 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 530mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The SI2325DS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 25V and a continuous drain current (I_D) of 30A, making it suitable for power management and switching applications in various electronic devices. With a low on-resistance (R_DS(on)) of approximately 10 mΩ, it minimizes power losses during operation, enhancing overall efficiency.
This MOSFET is packaged in a compact SO-8 form factor, allowing for easier integration into circuit designs. It is commonly used in applications such as power supplies, motor control, and battery management systems. The device also offers fast switching capabilities, which are crucial for high-frequency operations.
Overall, the SI2325DS-T1-GE3 is an efficient and versatile component suitable for a wide range of electronic applications requiring reliable switching performance.
This MOSFET is packaged in a compact SO-8 form factor, allowing for easier integration into circuit designs. It is commonly used in applications such as power supplies, motor control, and battery management systems. The device also offers fast switching capabilities, which are crucial for high-frequency operations.
Overall, the SI2325DS-T1-GE3 is an efficient and versatile component suitable for a wide range of electronic applications requiring reliable switching performance.
Equivalent
The SI2325DS-T1-GE3 is an N-channel MOSFET. Equivalent products include the IRLZ44N BSS138, and FQP30N06L. Be sure to verify specifications such as voltage, current ratings, and package type to ensure compatibility in your application. Always consult the datasheets for precise electrical characteristics.
Features
The SI2325DS-T1-GE3 is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It can handle up to 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current up to 30A, providing high-performance capabilities.
3. Low On-Resistance: With a maximum R_DS(on) of around 10 mΩ at V_GS = 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: This MOSFET offers rapid turn-on and turn-off times, enhancing overall circuit performance.
5. Package: It comes in a compact DPAK package, allowing for efficient thermal management and PCB space savings.
6. Gate Threshold Voltage: V_GS(th) is typically between 2V and 4V, facilitating compatibility with various driving circuits.
These features make the SI2325DS-T1-GE3 suitable for applications such as power management, motor control, and DC-DC converters.
1. Voltage Rating: It can handle up to 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current up to 30A, providing high-performance capabilities.
3. Low On-Resistance: With a maximum R_DS(on) of around 10 mΩ at V_GS = 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: This MOSFET offers rapid turn-on and turn-off times, enhancing overall circuit performance.
5. Package: It comes in a compact DPAK package, allowing for efficient thermal management and PCB space savings.
6. Gate Threshold Voltage: V_GS(th) is typically between 2V and 4V, facilitating compatibility with various driving circuits.
These features make the SI2325DS-T1-GE3 suitable for applications such as power management, motor control, and DC-DC converters.
Pinout
The SI2325DS-T1-GE3 is a dual N-channel MOSFET packaged in a 6-lead SOT-23 configuration. It has a total of 6 pins. The pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
This MOSFET is commonly used in low-side switching applications, power management, and for driving loads in various electronic circuits.
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
This MOSFET is commonly used in low-side switching applications, power management, and for driving loads in various electronic circuits.
Manufacturer
The manufacturer of the SI2325DS-T1-GE3 is Skyworks Solutions, Inc. Skyworks is a publicly traded company that specializes in the design and manufacture of analog and mixed-signal semiconductors, particularly for mobile communication and other wireless applications. Founded in 1962 and headquartered in Woburn, Massachusetts, Skyworks serves a diverse range of markets, including automotive, broadband, cellular, computing, and Internet of Things (IoT) devices. The company focuses on providing high-performance components for a variety of applications, including power management, RF (radio frequency) systems, and signal processing. Its products are integral to enabling connectivity in mobile devices and various electronic systems.
Application
The SI2325DS-T1-GE3 is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, load switching, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and motor control. Additionally, it's applicable in consumer electronics, telecommunications, and automotive systems for tasks like signal amplification and power routing. Overall, its versatility supports various electronic applications requiring efficient switching and power handling.
Package
The SI2325DS-T1-GE3 is packaged in a DPAK (also known as TO-252) package type. This surface-mount package is designed for efficient thermal performance and is commonly used for power management applications.
