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SI2337DS-T1-E3
+BOMMOSFET P-CH 80V 2.2A SOT23-3
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メーカービシェイ・シリコニクス
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メーカー品番 #SI2337DS-T1-E3
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在庫状況4570
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TrenchFET® |
| PartStatus | Obsolete |
| BaseProductNumber | SI2337 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 2.2A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 6V, 10V |
| RdsOn(Max)@Id,Vgs | 270mOhm @ 1.2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 500 pF @ 40 V |
| PowerDissipation(Max) | 760mW (Ta), 2.5W (Tc) |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The SI2337DS-T1-E3 is a dual N-channel MOSFET designed for low-voltage and high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 30V and continuous drain current (I_D) of up to 6.4A, making it suitable for various power management tasks, including DC-DC converters and motor control. The device is packaged in a compact SO-8 format, facilitating efficient thermal performance and PCB space savings.
Key specifications include a low on-resistance (R_DS(on)) which minimizes power loss during operation, and a fast switching speed, enhancing efficiency in high-frequency applications. It is particularly valued in consumer electronics and automotive applications for its reliability and performance. The SI2337DS-T1-E3 is also RoHS-compliant, ensuring it meets environmental standards.
Overall, this MOSFET is an excellent choice for engineers looking to optimize power efficiency in their designs.
Key specifications include a low on-resistance (R_DS(on)) which minimizes power loss during operation, and a fast switching speed, enhancing efficiency in high-frequency applications. It is particularly valued in consumer electronics and automotive applications for its reliability and performance. The SI2337DS-T1-E3 is also RoHS-compliant, ensuring it meets environmental standards.
Overall, this MOSFET is an excellent choice for engineers looking to optimize power efficiency in their designs.
Equivalent
The SI2337DS-T1-E3 is an N-channel MOSFET from Vishay. Equivalent products include the BSS138, 2N7000, and IRLML2502. These alternatives may vary in specifications such as voltage ratings, current capacity, and package types, so ensure compatibility with your specific application. Always check the datasheets for detailed comparisons.
Features
The SI2337DS-T1-E3 is an N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, which allows for reliable operation in medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 9.5A, enabling it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance of approximately 0.015 ohms at V_GS = 10V, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy drive with standard logic levels.
5. Package Type: It comes in a compact SO-8 package, facilitating space-efficient designs.
6. Applications: Suitable for DC-DC converters, load switching, and power management in various electronic devices.
These features make the SI2337DS-T1-E3 a versatile choice for designers seeking efficiency and reliability in semiconductor applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, which allows for reliable operation in medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 9.5A, enabling it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance of approximately 0.015 ohms at V_GS = 10V, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy drive with standard logic levels.
5. Package Type: It comes in a compact SO-8 package, facilitating space-efficient designs.
6. Applications: Suitable for DC-DC converters, load switching, and power management in various electronic devices.
These features make the SI2337DS-T1-E3 a versatile choice for designers seeking efficiency and reliability in semiconductor applications.
Pinout
The SI2337DS-T1-E3 is a N-channel MOSFET with a total of 8 pins. Its pin functions are as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The terminal that connects to ground or the negative side of the circuit.
The pinout is typically arranged with the gate, drain, and source positioned in a specific manner that conforms to the device's package design (e.g., SOT-23). This MOSFET is commonly used in applications such as power management, load switching, and in various electronic circuits due to its low on-resistance and high-speed switching capabilities.
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The terminal that connects to ground or the negative side of the circuit.
The pinout is typically arranged with the gate, drain, and source positioned in a specific manner that conforms to the device's package design (e.g., SOT-23). This MOSFET is commonly used in applications such as power management, load switching, and in various electronic circuits due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The SI2337DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that specializes in the production of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and MOSFETs, among others. Established in 1962, it is a leading global manufacturer known for its innovation and extensive product portfolio used in various applications such as industrial, automotive, consumer electronics, telecommunications, and military sectors. Vishay operates through numerous subsidiaries and has a significant global presence, providing electronic solutions to a diverse customer base.
Application
The SI2337DS-T1-E3 is a N-channel MOSFET primarily used in low-voltage, high-speed switching applications. Its common application areas include power management in DC-DC converters, load switching, and battery-powered devices. It is also suitable for use in synchronous rectification, motor control, and as part of high-efficiency power supplies in consumer electronics. Additionally, it can be employed in automotive applications and LED drivers, providing efficient performance in compact designs.
Package
The SI2337DS-T1-E3 is packaged in a DPAK (TO-252) package type. This surface-mount package is commonly used for power MOSFETs, offering good thermal performance and efficient use of board space.
