SI2337DS-T1-GE3

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SI2337DS-T1-GE3

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MOSFET P-CH 80V 2.2A SOT23-3

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1日間のアフターサービス保証

仕様

属性 値
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 2.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 270mOhm @ 1.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 500 pF @ 40 V
PowerDissipation(Max) 760mW (Ta), 2.5W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

The SI2337DS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency power management applications. Key features include:
- Voltage Rating: -20V (drain-to-source)
- Current Handling: -4.3A (continuous drain current)
- Low On-Resistance (RDS(on)): 47mΩ (max at VGS = -4.5V)
- Gate Threshold: -1V (typical), enabling compatibility with 3.3V/5V logic
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs
Common uses include load switching, power distribution, and battery management in portable devices, IoT, and consumer electronics. Its low power loss and fast switching make it suitable for energy-efficient systems.
For detailed specs, refer to the datasheet or Vishay’s official documentation.

Equivalent

Equivalent products to the SI2337DS-T1-GE3 (P-channel MOSFET, 20V, 4.3A, SOT-23) include:
- DMG2305UX (Diodes Inc)
- AO3401 (Alpha & Omega)
- BSS84 (NXP/Infineon)
- TP2104N8-G (3Chip)
These are similar in specs (voltage, current, package) and can serve as alternatives. Always verify datasheets for exact compatibility.

Features

The SI2337DS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain Current)
- Low On-Resistance: 47mΩ (max) @ VGS = -10V
- Gate Threshold Voltage: -1V to -2.5V (VGS(th))
- Low Gate Charge (Qg): 9.3nC (typical)
- Fast Switching Speed: Suitable for power management applications
- Package: SOT-23 (Compact, surface-mount)
- Applications: Load switching, power management, battery protection
This MOSFET is optimized for efficiency and space-constrained designs, making it ideal for portable electronics and low-voltage systems.

Pinout

The SI2337DS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection to the load.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) for efficient power switching.
Commonly used in power management, load switching, and battery protection circuits.

Application

The SI2337DS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery-powered systems.
3. DC-DC Converters – Efficient power conversion in compact electronics.
4. Load Switching – On/off control in consumer electronics (e.g., smartphones, tablets).
5. Automotive Applications – Low-voltage power distribution and infotainment systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient designs.

Package

The SI2337DS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package. This small surface-mount package is compact, suitable for space-constrained applications, and has three pins. It is commonly used in power management, load switching, and other low-voltage circuits. The SOT-23-3 package offers good thermal performance and ease of PCB assembly.

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