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SI2342DS-T1-GE3
+BOMMOSFET N-CH 8V 6A SOT-23
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メーカービシェイ・シリコニクス
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メーカー品番 #SI2342DS-T1-GE3
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データシート SI2342DS-T1-GE3 DataSheet
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在庫状況6176
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain(Id) @ 25°C | 6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.2V, 4.5V |
| Rds On(Max) @ Id Vgs | 17mOhm @ 7.2A, 4.5V |
| Vgs(th)(Max) @ Id | 800mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.8 nC @ 4.5 V |
| Vgs(Max) | ±5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1070 pF @ 4 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概要
Description
"Introduction to SI2342DS-T1-GE3" likely refers to a course or module code, possibly related to a specific academic program or training. While the specific content of the course is not detailed by the code itself, we can infer a few potential aspects:
1. SI2342DS: This part of the code might indicate the subject area and specific course number. "DS" could stand for "Data Science," suggesting a focus on data analysis, machine learning, or related topics.
2. T1: This might refer to the term or semester, such as "Term 1," indicating when the course is offered.
3. GE3: This could signify a general education requirement or level, like "General Education Level 3," suggesting it might be an advanced course.
The course might cover foundational to advanced topics in its subject area, aiming to equip students with essential skills and knowledge. For a precise understanding of what this introduction involves, including its curriculum, objectives, and prerequisites, you would need to refer to the specific institution's catalog or course syllabus.
1. SI2342DS: This part of the code might indicate the subject area and specific course number. "DS" could stand for "Data Science," suggesting a focus on data analysis, machine learning, or related topics.
2. T1: This might refer to the term or semester, such as "Term 1," indicating when the course is offered.
3. GE3: This could signify a general education requirement or level, like "General Education Level 3," suggesting it might be an advanced course.
The course might cover foundational to advanced topics in its subject area, aiming to equip students with essential skills and knowledge. For a precise understanding of what this introduction involves, including its curriculum, objectives, and prerequisites, you would need to refer to the specific institution's catalog or course syllabus.
Equivalent
The SI2342DS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include:
1. BSZ0902NS from Infineon
2. FDMA1027PZ from ON Semiconductor
3. NTMFS4921N from ON Semiconductor
4. AO3400A from Alpha & Omega Semiconductor
These are functionally similar but may have varying specifications. Always check datasheets to ensure compatibility for your specific application.
1. BSZ0902NS from Infineon
2. FDMA1027PZ from ON Semiconductor
3. NTMFS4921N from ON Semiconductor
4. AO3400A from Alpha & Omega Semiconductor
These are functionally similar but may have varying specifications. Always check datasheets to ensure compatibility for your specific application.
Features
The SI2342DS-T1-GE3 is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications including power management, load switching, and DC-DC conversion. Key features include:
1. Low On-Resistance: Offers low R_DS(on) which ensures efficient power delivery and minimal energy loss.
2. Dual N-Channel Configuration: Comprising two N-channel MOSFETs, it allows for compact design and efficient circuit integration.
3. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) suitable for medium to high-voltage applications.
4. Current Handling: Capable of handling substantial current, making it suitable for driving moderate power loads.
5. Compact Package: Comes in a small, surface-mount package (often SO-8), aiding in efficient use of PCB space.
6. Thermal Performance: Designed to manage heat efficiently, often featuring low thermal resistance.
These features make the SI2342DS-T1-GE3 ideal for use in portable electronics, automotive applications, and other systems requiring efficient power handling and compact design.
1. Low On-Resistance: Offers low R_DS(on) which ensures efficient power delivery and minimal energy loss.
2. Dual N-Channel Configuration: Comprising two N-channel MOSFETs, it allows for compact design and efficient circuit integration.
3. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) suitable for medium to high-voltage applications.
4. Current Handling: Capable of handling substantial current, making it suitable for driving moderate power loads.
5. Compact Package: Comes in a small, surface-mount package (often SO-8), aiding in efficient use of PCB space.
6. Thermal Performance: Designed to manage heat efficiently, often featuring low thermal resistance.
These features make the SI2342DS-T1-GE3 ideal for use in portable electronics, automotive applications, and other systems requiring efficient power handling and compact design.
Pinout
The SI2342DS-T1-GE3 is a P-channel MOSFET manufactured by Vishay. It comes in a SOT-23 package, which typically has a 3-pin configuration. The functions of the pins are as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): The source pin is where the current enters the MOSFET. For a P-channel MOSFET like the SI2342DS, the source is typically connected to a higher voltage relative to the drain.
3. Drain (D): This is the pin where the current exits the MOSFET. For P-channel MOSFETs, the drain is usually connected to the load.
The SI2342DS-T1-GE3 is used in applications that require switching and amplification, taking advantage of the MOSFET's efficiency and fast switching capabilities.
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): The source pin is where the current enters the MOSFET. For a P-channel MOSFET like the SI2342DS, the source is typically connected to a higher voltage relative to the drain.
3. Drain (D): This is the pin where the current exits the MOSFET. For P-channel MOSFETs, the drain is usually connected to the load.
The SI2342DS-T1-GE3 is used in applications that require switching and amplification, taking advantage of the MOSFET's efficiency and fast switching capabilities.
Manufacturer
The SI2342DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design, manufacture, and supply of discrete semiconductors and passive electronic components. Founded in 1962, the company produces a wide range of products, including diodes, MOSFETs, optoelectronics, and resistors, capacitors, and inductors. These components are integral to a variety of electronic devices and systems, serving industries such as automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. Vishay is known for its innovation and reliability in the electronics components industry.
Application
The SI2342DS-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in applications requiring efficient power management and high-speed switching. Its typical application areas include power supply circuits, battery management systems, DC-DC converters, and load switches. It is also utilized in motor control systems, automotive electronics, and various consumer electronics for switching and amplifying electronic signals. Due to its ability to handle high current and voltage, it is suitable for optimizing energy efficiency in portable devices and other compact electronic devices.
Package
The SI2342DS-T1-GE3 is a surface-mount MOSFET packaged in a standard SOT-23 format.
