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SI3127DV-T1-GE3
+BOMMOSFET P-CH 60V 3.5A/13A 6TSOP
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メーカービシェイ・シリコニクス
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メーカー品番 #SI3127DV-T1-GE3
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データシート SI3127DV-T1-GE3 DataSheet
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在庫状況26690
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仕様
| 属性 | 値 |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI3127 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 833 pF @ 20 V |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The SI3127DV-T1-GE3 is an integrated circuit (IC) typically used in electronic applications for voltage regulation or switching. This IC is part of a series of devices designed to manage power efficiently and is often utilized in consumer electronics, telecommunication systems, and computer hardware. The "SI" in its name usually denotes the manufacturer, while the numbers and letters indicate the specific model and variant. This device might be used for purposes such as converting DC voltage levels or protecting circuits from overvoltage conditions.
Key features of such ICs often include low power consumption, high efficiency, and robust thermal performance. The "GE3" suffix often indicates specific package type or environmental compliance, such as RoHS, which ensures the device is free from certain hazardous substances.
When integrating the SI3127DV-T1-GE3 into a design, engineers consider factors like input and output voltage range, current rating, and thermal management to ensure optimal performance and reliability. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Key features of such ICs often include low power consumption, high efficiency, and robust thermal performance. The "GE3" suffix often indicates specific package type or environmental compliance, such as RoHS, which ensures the device is free from certain hazardous substances.
When integrating the SI3127DV-T1-GE3 into a design, engineers consider factors like input and output voltage range, current rating, and thermal management to ensure optimal performance and reliability. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The SI3127DV-T1-GE3 is a P-channel MOSFET. Equivalent products include:
1. AO3407A by Alpha & Omega Semiconductor
2. FDN5618P by ON Semiconductor
3. PMV65XP by Nexperia
4. IRLML6401 by Infineon Technologies
These equivalents are selected based on similar electrical characteristics and package type, but always verify specifications to ensure compatibility with your application.
1. AO3407A by Alpha & Omega Semiconductor
2. FDN5618P by ON Semiconductor
3. PMV65XP by Nexperia
4. IRLML6401 by Infineon Technologies
These equivalents are selected based on similar electrical characteristics and package type, but always verify specifications to ensure compatibility with your application.
Features
The SI3127DV-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Key features include:
1. Dual N-Channel Configuration: It offers two N-channel MOSFETs in a single package, optimizing space and simplifying circuit design.
2. Low On-Resistance: It features a low on-resistance, which minimizes power loss and enhances efficiency in switching applications.
3. High-Speed Switching: The device supports fast switching speeds, making it ideal for high-frequency applications.
4. Compact Package: Typically housed in a small, space-saving package like the PowerPAK® SO-8, it is suitable for compact electronic designs.
5. Thermal Performance: It is designed to handle significant power loads while maintaining effective thermal performance.
6. Rugged Design: The MOSFET is built to withstand voltage and current stresses, enhancing its reliability in various applications.
These features make the SI3127DV-T1-GE3 suitable for applications in power management, DC-DC converters, and other electronic circuits requiring efficient switching performance.
1. Dual N-Channel Configuration: It offers two N-channel MOSFETs in a single package, optimizing space and simplifying circuit design.
2. Low On-Resistance: It features a low on-resistance, which minimizes power loss and enhances efficiency in switching applications.
3. High-Speed Switching: The device supports fast switching speeds, making it ideal for high-frequency applications.
4. Compact Package: Typically housed in a small, space-saving package like the PowerPAK® SO-8, it is suitable for compact electronic designs.
5. Thermal Performance: It is designed to handle significant power loads while maintaining effective thermal performance.
6. Rugged Design: The MOSFET is built to withstand voltage and current stresses, enhancing its reliability in various applications.
These features make the SI3127DV-T1-GE3 suitable for applications in power management, DC-DC converters, and other electronic circuits requiring efficient switching performance.
Pinout
The SI3127DV-T1-GE3 is a MOSFET transistor produced by Vishay Siliconix. It comes in a PowerPAK SC-70 package and has a dual N-Channel configuration. The device has a pin count of 6.
Here is a brief description of its pin functions:
1. Source (S1): The source terminal for the first MOSFET.
2. Gate (G1): The gate terminal for the first MOSFET, which controls the on/off state.
3. Drain (D1): The drain terminal for the first MOSFET, connected to the load.
4. Source (S2): The source terminal for the second MOSFET.
5. Gate (G2): The gate terminal for the second MOSFET.
6. Drain (D2): The drain terminal for the second MOSFET.
The SI3127DV-T1-GE3 is used primarily in applications requiring efficient power management and switching, such as DC-DC converters and load switches.
Here is a brief description of its pin functions:
1. Source (S1): The source terminal for the first MOSFET.
2. Gate (G1): The gate terminal for the first MOSFET, which controls the on/off state.
3. Drain (D1): The drain terminal for the first MOSFET, connected to the load.
4. Source (S2): The source terminal for the second MOSFET.
5. Gate (G2): The gate terminal for the second MOSFET.
6. Drain (D2): The drain terminal for the second MOSFET.
The SI3127DV-T1-GE3 is used primarily in applications requiring efficient power management and switching, such as DC-DC converters and load switches.
Manufacturer
The SI3127DV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products including diodes, MOSFETs, power ICs, resistors, inductors, and capacitors. Vishay serves various markets such as industrial, computing, automotive, consumer, telecommunications, military, and aerospace. Founded in 1962, Vishay has established itself as one of the largest manufacturers in the electronic components industry, known for its extensive product portfolio and focus on innovation.
Application
The SI3127DV-T1-GE3 is a N-channel MOSFET used primarily for power management applications. Its compact design and efficient switching make it suitable for use in DC-DC converters, load switches, and power management systems in consumer electronics. Additionally, it can be found in applications like power supply circuits, motor drives, and battery management systems. Its reliability and efficiency are crucial for enhancing the performance and longevity of electronic devices, making it a popular choice in various industrial and commercial products.
Package
The SI3127DV-T1-GE3 is a Surface-Mount Device (SMD) in a PowerPAK® SC-70 package, which is designed for compact, efficient electronic applications.
