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SI3440DV-T1-GE3
+BOMMOSFET N-CH 150V 1.2A 6TSOP
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メーカービシェイ・シリコニクス
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メーカー品番 #SI3440DV-T1-GE3
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在庫状況8936
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.14W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | SI3440 |
概要
Description
The SI3440DV-T1-GE3 is a high-performance, dual N-channel MOSFET designed for various power management applications. It features low on-resistance, making it suitable for use in battery-powered devices, DC-DC converters, and other power switching applications. The device operates with a gate-source voltage range that allows for efficient switching and minimal power loss.
With a maximum drain current rating of 30A and a low R_DS(on) (drain-source on-resistance), the SI3440DV-T1-GE3 provides enhanced efficiency and thermal performance. Its compact package allows for easy integration into designs, making it ideal for space-constrained environments.
Additionally, the device is RoHS-compliant, ensuring it meets environmental standards for lead-free soldering. Overall, the SI3440DV-T1-GE3 is a reliable choice for engineers looking to optimize power management in their electronic designs.
With a maximum drain current rating of 30A and a low R_DS(on) (drain-source on-resistance), the SI3440DV-T1-GE3 provides enhanced efficiency and thermal performance. Its compact package allows for easy integration into designs, making it ideal for space-constrained environments.
Additionally, the device is RoHS-compliant, ensuring it meets environmental standards for lead-free soldering. Overall, the SI3440DV-T1-GE3 is a reliable choice for engineers looking to optimize power management in their electronic designs.
Equivalent
The SI3440DV-T1-GE3 is a Power MOSFET. Equivalent products include the SI3442DV-T1-GE3, which has similar specifications but may differ in current ratings or threshold voltages. Other potential substitutes might include MOSFETs from manufacturers like Infineon, ON Semiconductor, or Vishay, depending on the specific electrical characteristics needed for your application. Always verify datasheets to ensure compatibility in voltage, current, and thermal performance.
Features
The SI3440DV-T1-GE3 is a dual-channel, high-speed, low-power operational amplifier designed for signal processing applications. Key features include:
1. Dual Channel: It supports two independent amplifier channels, making it suitable for differential signaling and multi-channel applications.
2. Low Power Consumption: Optimized for low power usage, it is ideal for battery-operated devices.
3. High Slew Rate: Provides fast response times, which is crucial for high-frequency applications.
4. Wide Bandwidth: Offers a broad bandwidth, enabling effective operation across various frequency ranges.
5. Low Noise: Designed to minimize noise, enhancing the quality of the amplified signal.
6. Rail-to-Rail Output: Allows the output to swing close to the supply rails, maximizing output voltage range.
7. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in diverse conditions.
8. Compact Package: Available in a small footprint, facilitating integration into space-constrained designs.
These features make the SI3440DV-T1-GE3 suitable for a variety of applications including audio, sensor signal conditioning, and data acquisition systems.
1. Dual Channel: It supports two independent amplifier channels, making it suitable for differential signaling and multi-channel applications.
2. Low Power Consumption: Optimized for low power usage, it is ideal for battery-operated devices.
3. High Slew Rate: Provides fast response times, which is crucial for high-frequency applications.
4. Wide Bandwidth: Offers a broad bandwidth, enabling effective operation across various frequency ranges.
5. Low Noise: Designed to minimize noise, enhancing the quality of the amplified signal.
6. Rail-to-Rail Output: Allows the output to swing close to the supply rails, maximizing output voltage range.
7. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in diverse conditions.
8. Compact Package: Available in a small footprint, facilitating integration into space-constrained designs.
These features make the SI3440DV-T1-GE3 suitable for a variety of applications including audio, sensor signal conditioning, and data acquisition systems.
Pinout
The SI3440DV-T1-GE3 is a Power over Ethernet (PoE) powered device interface IC designed for Ethernet applications. It features a total of 16 pins.
Key pin functions include:
1. VDD: Power supply for the IC.
2. GND: Ground connection.
3. VIN: Input voltage for PoE.
4. VOUT: Output voltage for powering devices.
5. SCL/SDA: I2C communication lines for configuration and control.
6. PWM: Pulse-width modulation control for power management.
7. LED: Indicator pin for status indication.
8. FAULT: Output pin for fault detection.
These pins enable the SI3440DV-T1-GE3 to efficiently manage power delivery while ensuring robust operation in Ethernet environments.
Key pin functions include:
1. VDD: Power supply for the IC.
2. GND: Ground connection.
3. VIN: Input voltage for PoE.
4. VOUT: Output voltage for powering devices.
5. SCL/SDA: I2C communication lines for configuration and control.
6. PWM: Pulse-width modulation control for power management.
7. LED: Indicator pin for status indication.
8. FAULT: Output pin for fault detection.
These pins enable the SI3440DV-T1-GE3 to efficiently manage power delivery while ensuring robust operation in Ethernet environments.
Manufacturer
The SI3440DV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive components, widely recognized for its extensive product portfolio that includes diodes, transistors, capacitors, resistors, and inductors. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications.
Established in 1962, Vishay has established itself as a key player in the electronics industry, focusing on innovation and quality. They cater to a wide range of applications, providing solutions that enhance product performance and reliability. Vishay is known for its commitment to research and development, ensuring that it remains at the forefront of technological advancements. The SI3440DV-T1-GE3 itself is a high-performance MOSFET designed for efficient power management and is often used in applications such as power supplies and motor control.
Established in 1962, Vishay has established itself as a key player in the electronics industry, focusing on innovation and quality. They cater to a wide range of applications, providing solutions that enhance product performance and reliability. Vishay is known for its commitment to research and development, ensuring that it remains at the forefront of technological advancements. The SI3440DV-T1-GE3 itself is a high-performance MOSFET designed for efficient power management and is often used in applications such as power supplies and motor control.
Application
The SI3440DV-T1-GE3 is a high-performance, dual-channel, high-voltage gate driver primarily used in applications such as motor control, power inverters, and industrial automation. It is suitable for driving MOSFETs and IGBTs in various power electronics systems. Additionally, it can be employed in renewable energy systems, such as solar inverters and wind turbines, as well as in electric vehicles. Its features, including high-speed switching and robust protection mechanisms, make it ideal for high-efficiency power conversion and control applications, enhancing the performance and reliability of various electronic systems.
Package
The SI3440DV-T1-GE3 is packaged in a SO-8 (Small Outline 8-pin) package type.
