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SI3443DDV-T1-GE3
+BOMMOSFET P-CH 20V 4A/5.3A 6TSOP
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メーカービシェイ・シリコニクス
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メーカー品番 #SI3443DDV-T1-GE3
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データシート SI3443DDV-T1-GE3 DataSheet
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パッケージ TSOT-23-6
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在庫状況3850
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta), 5.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 4.5A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 8 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 970 pF @ 10 V |
| Power Dissipation (Max) | 1.7W (Ta), 2.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
概要
Description
The SI3443DDV-T1-GE3 appears to be a specific part number, likely related to an electronic component or semiconductor device, such as a transistor, diode, or integrated circuit. These components are commonly used in electronic circuits to perform various functions, including amplification, switching, and signal processing. The part number typically includes the series, package type, and specific features or specifications of the component.
To fully understand the specifics of the SI3443DDV-T1-GE3, one would typically consult the datasheet provided by the manufacturer, which details its electrical characteristics, pin configuration, typical applications, and thermal and mechanical specifications. The datasheet is crucial for engineers and designers to ensure proper integration into their designs and to verify that the component meets the requirements of their project. If you are dealing with this component, identifying the manufacturer and accessing its datasheet is recommended for detailed information.
To fully understand the specifics of the SI3443DDV-T1-GE3, one would typically consult the datasheet provided by the manufacturer, which details its electrical characteristics, pin configuration, typical applications, and thermal and mechanical specifications. The datasheet is crucial for engineers and designers to ensure proper integration into their designs and to verify that the component meets the requirements of their project. If you are dealing with this component, identifying the manufacturer and accessing its datasheet is recommended for detailed information.
Equivalent
The SI3443DDV-T1-GE3 is a dual N-channel MOSFET. Equivalent products might include:
1. NXP BUK6Y42-60E
2. Infineon BSC014N06NS
3. ON Semiconductor NTMFS4941NT1G
4. Fairchild FDMS7692
5. Toshiba TPN1200APL
These equivalents may have slight variations in specifications, so always check the datasheets to ensure compatibility with your application.
1. NXP BUK6Y42-60E
2. Infineon BSC014N06NS
3. ON Semiconductor NTMFS4941NT1G
4. Fairchild FDMS7692
5. Toshiba TPN1200APL
These equivalents may have slight variations in specifications, so always check the datasheets to ensure compatibility with your application.
Features
The SI3443DDV-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Key features include:
1. Type: N-Channel MOSFET, suitable for high-speed switching.
2. Voltage: It typically supports a drain-source voltage (V_DS) of 30V.
3. Current: Capable of handling a continuous drain current (I_D) of around 8A.
4. R_DS(on): Low on-resistance, often in the range of 10-20 mΩ, which minimizes power loss.
5. Package: Available in a compact PowerPAK® SO-8 package, which helps in efficient thermal management.
6. Applications: Ideal for DC-DC converters, power management, and load switching in various electronic devices.
7. Temperature Range: Operates effectively across a wide temperature range, making it versatile for different environments.
8. Efficiency: Designed to provide high efficiency in power conversion applications.
These features make the SI3443DDV-T1-GE3 a reliable choice for engineers looking for performance and compactness in power-efficient designs.
1. Type: N-Channel MOSFET, suitable for high-speed switching.
2. Voltage: It typically supports a drain-source voltage (V_DS) of 30V.
3. Current: Capable of handling a continuous drain current (I_D) of around 8A.
4. R_DS(on): Low on-resistance, often in the range of 10-20 mΩ, which minimizes power loss.
5. Package: Available in a compact PowerPAK® SO-8 package, which helps in efficient thermal management.
6. Applications: Ideal for DC-DC converters, power management, and load switching in various electronic devices.
7. Temperature Range: Operates effectively across a wide temperature range, making it versatile for different environments.
8. Efficiency: Designed to provide high efficiency in power conversion applications.
These features make the SI3443DDV-T1-GE3 a reliable choice for engineers looking for performance and compactness in power-efficient designs.
Pinout
The SI3443DDV-T1-GE3 is a dual N-channel MOSFET produced by Vishay Siliconix. It is housed in an 8-pin PowerPAK SO-8 package. The primary function of this component is to provide efficient switching and amplification in electronic circuits.
The pin configuration is as follows:
1. Source 1 (S1)
2. Gate 1 (G1)
3. Source 2 (S2)
4. Gate 2 (G2)
5. Source 2 (S2, common with pin 3)
6. Drain 2 (D2)
7. Drain 1 (D1)
8. Source 1 (S1, common with pin 1)
The device is designed to handle a variety of applications, including load switching and DC-DC conversion. It features low on-resistance and is capable of handling high current loads efficiently.
The pin configuration is as follows:
1. Source 1 (S1)
2. Gate 1 (G1)
3. Source 2 (S2)
4. Gate 2 (G2)
5. Source 2 (S2, common with pin 3)
6. Drain 2 (D2)
7. Drain 1 (D1)
8. Source 1 (S1, common with pin 1)
The device is designed to handle a variety of applications, including load switching and DC-DC conversion. It features low on-resistance and is capable of handling high current loads efficiently.
Manufacturer
The SI3443DDV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors, among others. Vishay's components are used in various applications across numerous industries, such as automotive, industrial, consumer electronics, telecommunications, and computing. The company is known for its extensive product portfolio and its focus on providing innovative solutions to meet the needs of its customers in the electronics industry.
Application
The SI3443DDV-T1-GE3 is a dual N-channel MOSFET designed for efficient power management. It is commonly used in various applications, including:
1. DC-DC Converters: Ideal for voltage regulation in portable devices.
2. Power Management: Suitable for battery-operated devices to extend battery life.
3. Load Switching: Effective in controlling power to different sections of a circuit.
4. Motor Drives: Utilized in low voltage motor control applications.
5. LED Drivers: Used in driving LEDs with high efficiency.
6. Consumer Electronics: Applicable in smartphones, tablets, and laptops for efficient power distribution.
These applications benefit from its low on-resistance and high efficiency, making it suitable for compact and efficient power solutions.
1. DC-DC Converters: Ideal for voltage regulation in portable devices.
2. Power Management: Suitable for battery-operated devices to extend battery life.
3. Load Switching: Effective in controlling power to different sections of a circuit.
4. Motor Drives: Utilized in low voltage motor control applications.
5. LED Drivers: Used in driving LEDs with high efficiency.
6. Consumer Electronics: Applicable in smartphones, tablets, and laptops for efficient power distribution.
These applications benefit from its low on-resistance and high efficiency, making it suitable for compact and efficient power solutions.
Package
The SI3443DDV-T1-GE3 is a dual MOSFET device in a PowerPAK® 1212-8 package type. This package offers a compact, thermally efficient design suitable for power management applications.
