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SI4401FDY-T1-GE3
+BOMMOSFET P-CH 40V 9.9A/14A 8SO
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メーカービシェイ・シリコニクス
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メーカー品番 #SI4401FDY-T1-GE3
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データシート SI4401FDY-T1-GE3 DataSheet
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在庫状況5380
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仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen III |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 9.9A (Ta), 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 14.2mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4000 pF @ 20 V |
| PowerDissipation(Max) | 2.5W (Ta), 5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
概要
Description
The SI4401FDY-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications. Manufactured by Vishay, it is part of their TrenchFET series, known for high efficiency and low on-resistance. This P-channel MOSFET is optimized for low-voltage applications and is commonly used in power management tasks such as in DC-DC converters, battery protection circuits, and load switches.
Key features of the SI4401FDY-T1-GE3 include a low on-resistance, contributing to reduced power loss and increased efficiency, and a fast switching speed, allowing for quick response times in managing electronic loads. It typically operates with voltages around -30V and has a continuous drain current capability of approximately -9A, making it suitable for a variety of medium-power applications.
The device comes in a surface-mount package (SO-8), which is ideal for space-constrained designs. Its robust performance and reliability make it a popular choice for designers looking to improve power efficiency in compact electronic devices.
Key features of the SI4401FDY-T1-GE3 include a low on-resistance, contributing to reduced power loss and increased efficiency, and a fast switching speed, allowing for quick response times in managing electronic loads. It typically operates with voltages around -30V and has a continuous drain current capability of approximately -9A, making it suitable for a variety of medium-power applications.
The device comes in a surface-mount package (SO-8), which is ideal for space-constrained designs. Its robust performance and reliability make it a popular choice for designers looking to improve power efficiency in compact electronic devices.
Equivalent
The SI4401FDY-T1-GE3 is a N-channel MOSFET. Equivalent products with similar specifications might include:
1. IRF530 by Infineon Technologies
2. FQP30N06L by ON Semiconductor
3. IRLZ44N by Infineon Technologies
4. NDP6060L by ON Semiconductor
Always verify the specifications such as voltage, current, RDS(on), and package type to ensure compatibility with your application.
1. IRF530 by Infineon Technologies
2. FQP30N06L by ON Semiconductor
3. IRLZ44N by Infineon Technologies
4. NDP6060L by ON Semiconductor
Always verify the specifications such as voltage, current, RDS(on), and package type to ensure compatibility with your application.
Features
The SI4401FDY-T1-GE3 is a N-channel MOSFET transistor commonly used in power management applications. Here are its key features:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 30V, making it suitable for low to moderate voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 10A, which allows it to manage reasonable power loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 8.5 mΩ, which ensures efficient operation with minimal power loss.
4. Package: It comes in a PowerPAK® SO-8 package, offering a compact form factor with good thermal performance.
5. Thermal Resistance: The device exhibits low thermal resistance, aiding in heat dissipation and enhancing reliability.
6. Gate Threshold Voltage: The relatively low gate threshold voltage (V_GS(th)) makes it suitable for logic level operations.
7. Applications: It is ideal for applications like DC-DC converters, load switching, and power management in various electronic devices.
These features make the SI4401FDY-T1-GE3 a reliable choice for efficient power control in electronic circuits.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 30V, making it suitable for low to moderate voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 10A, which allows it to manage reasonable power loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 8.5 mΩ, which ensures efficient operation with minimal power loss.
4. Package: It comes in a PowerPAK® SO-8 package, offering a compact form factor with good thermal performance.
5. Thermal Resistance: The device exhibits low thermal resistance, aiding in heat dissipation and enhancing reliability.
6. Gate Threshold Voltage: The relatively low gate threshold voltage (V_GS(th)) makes it suitable for logic level operations.
7. Applications: It is ideal for applications like DC-DC converters, load switching, and power management in various electronic devices.
These features make the SI4401FDY-T1-GE3 a reliable choice for efficient power control in electronic circuits.
Pinout
The SI4401FDY-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It typically comes in a PowerPAK SO-8 package. This package consists of 8 pins. The SI4401FDY-T1-GE3 is an N-channel MOSFET, which means it is used to switch or amplify electronic signals within a circuit.
The main functions of the pins in the SI4401FDY-T1-GE3 are as follows:
1. Drain (D): Connects to the load and is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
2. Gate (G): Controls the MOSFET's operation. When a sufficient voltage is applied to this pin, it allows current to flow between the drain and source.
3. Source (S): The terminal through which current exits the MOSFET. It is typically connected to ground in N-channel configurations.
Note that in practice, multiple drain or source pins may be internally connected to the same terminal to handle higher currents, but the functional roles remain as described.
The main functions of the pins in the SI4401FDY-T1-GE3 are as follows:
1. Drain (D): Connects to the load and is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
2. Gate (G): Controls the MOSFET's operation. When a sufficient voltage is applied to this pin, it allows current to flow between the drain and source.
3. Source (S): The terminal through which current exits the MOSFET. It is typically connected to ground in N-channel configurations.
Note that in practice, multiple drain or source pins may be internally connected to the same terminal to handle higher currents, but the functional roles remain as described.
Manufacturer
The SI4401FDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, it has grown to become one of the largest manufacturers in the electronics industry. Vishay's product portfolio includes a wide range of components such as diodes, MOSFETs, resistors, capacitors, inductors, and more. These components are used in various applications across industries such as automotive, industrial, consumer electronics, telecommunications, and computing. The company is known for its focus on innovation, quality, and reliability in its products.
Application
The SI4401FDY-T1-GE3 is a N-channel MOSFET commonly used in various power management applications. Its key application areas include:
1. DC-DC Converters: Facilitates efficient power conversion in voltage regulation circuits.
2. Battery Management: Used in battery protection and charging circuits.
3. Load Switching: Functions as a switch for powering on/off different loads in electronic devices.
4. Motor Drives: Controls motors in applications like fans or pumps.
5. LED Drivers: Utilized in driving LEDs by regulating current flow.
6. General-Purpose Switching: Applicable in a wide range of electronic systems for switching purposes due to its low resistance and high-speed operation.
These applications leverage the device's low on-resistance and fast switching capabilities.
1. DC-DC Converters: Facilitates efficient power conversion in voltage regulation circuits.
2. Battery Management: Used in battery protection and charging circuits.
3. Load Switching: Functions as a switch for powering on/off different loads in electronic devices.
4. Motor Drives: Controls motors in applications like fans or pumps.
5. LED Drivers: Utilized in driving LEDs by regulating current flow.
6. General-Purpose Switching: Applicable in a wide range of electronic systems for switching purposes due to its low resistance and high-speed operation.
These applications leverage the device's low on-resistance and fast switching capabilities.
Package
The SI4401FDY-T1-GE3 is a MOSFET packaged in a PowerPAK SO-8 format. This type of package is designed for efficient heat dissipation and compact size, making it suitable for high-performance, space-constrained applications.
