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SI4463BDY-T1-E3
+BOMMOSFET P-CH 20V 9.8A 8SO
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メーカービシェイ・シリコニクス
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メーカー品番 #SI4463BDY-T1-E3
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データシート SI4463BDY-T1-E3 DataSheet
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在庫状況22912
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
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仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 9.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 11mOhm @ 13.7A, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 56 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
概要
Description
The SI4463BDY-T1-E3 is a P-channel MOSFET transistor produced by Vishay Siliconix. It is designed for use in load switch and battery protection applications due to its low on-resistance and high current-carrying capabilities. The device operates with a maximum drain-source voltage of -30V and can handle continuous drain current up to -12A, making it suitable for medium to high-power operations. It features a low gate charge, which ensures efficient switching performance and reduces power loss, thereby enhancing energy efficiency in applications.
The MOSFET is housed in a PowerPAK® SO-8 package, which is compact and offers excellent thermal performance. This packaging facilitates easy integration into various circuit boards while maintaining performance reliability. Additionally, the SI4463BDY-T1-E3 is lead-free and compliant with RoHS standards, making it an environmentally friendly choice. Its robust design and efficiency make it widely used in portable electronics, computing, and telecommunications equipment.
The MOSFET is housed in a PowerPAK® SO-8 package, which is compact and offers excellent thermal performance. This packaging facilitates easy integration into various circuit boards while maintaining performance reliability. Additionally, the SI4463BDY-T1-E3 is lead-free and compliant with RoHS standards, making it an environmentally friendly choice. Its robust design and efficiency make it widely used in portable electronics, computing, and telecommunications equipment.
Equivalent
The SI4463BDY-T1-E3 is a MOSFET transistor used for various electronic applications. Equivalent products can include:
1. IRF530 - N-channel MOSFET with similar voltage and current ratings.
2. 2N7002 - Suitable for lower current applications.
3. FDV303N - Another alternative for low-power applications.
Compatibility depends on specific circuit requirements, so always verify electrical characteristics and package compatibility before substituting.
1. IRF530 - N-channel MOSFET with similar voltage and current ratings.
2. 2N7002 - Suitable for lower current applications.
3. FDV303N - Another alternative for low-power applications.
Compatibility depends on specific circuit requirements, so always verify electrical characteristics and package compatibility before substituting.
Features
The SI4463BDY-T1-E3 is a N-channel MOSFET designed for use in various electronic applications. Key features include:
1. N-Channel MOSFET: Ideal for efficient power management and switching applications.
2. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
3. Current Capacity: Can handle continuous drain current up to 12.8A.
4. Low On-Resistance: Features a low R_DS(on) which minimizes power loss, ensuring high efficiency.
5. Fast Switching Speed: Provides rapid switching which is beneficial for high-frequency applications.
6. Packaging: Available in a compact SO-8 package, facilitating easy integration into circuit designs.
7. Thermal Performance: Offers efficient thermal dissipation to maintain performance stability under load.
8. Applications: Suitable for use in DC-DC converters, load switches, and power management across various devices.
These features make the SI4463BDY-T1-E3 a versatile component for enhancing the efficiency and reliability of electronic systems.
1. N-Channel MOSFET: Ideal for efficient power management and switching applications.
2. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
3. Current Capacity: Can handle continuous drain current up to 12.8A.
4. Low On-Resistance: Features a low R_DS(on) which minimizes power loss, ensuring high efficiency.
5. Fast Switching Speed: Provides rapid switching which is beneficial for high-frequency applications.
6. Packaging: Available in a compact SO-8 package, facilitating easy integration into circuit designs.
7. Thermal Performance: Offers efficient thermal dissipation to maintain performance stability under load.
8. Applications: Suitable for use in DC-DC converters, load switches, and power management across various devices.
These features make the SI4463BDY-T1-E3 a versatile component for enhancing the efficiency and reliability of electronic systems.
Pinout
The SI4463BDY-T1-E3 is not a standalone component; it is part of Vishay's MOSFET product line, specifically a Power MOSFET. The "SI4463BDY" indicates the specific MOSFET model, and the "T1-E3" refers to the packaging and tape-and-reel specifications for shipment.
The SI4463BDY is a dual N-channel MOSFET, which typically means it contains two MOSFETs in a single package. The package type is usually an SO-8, which has 8 pins in total. For dual MOSFETs like this, each MOSFET has a gate, drain, and source, with the pins distributed accordingly.
The primary function of the SI4463BDY is for switching applications. It is used in power management, DC-DC converters, and other applications where efficient power switching is required. The device is known for its low on-resistance and high-speed operation, making it suitable for a wide range of electronic applications.
The SI4463BDY is a dual N-channel MOSFET, which typically means it contains two MOSFETs in a single package. The package type is usually an SO-8, which has 8 pins in total. For dual MOSFETs like this, each MOSFET has a gate, drain, and source, with the pins distributed accordingly.
The primary function of the SI4463BDY is for switching applications. It is used in power management, DC-DC converters, and other applications where efficient power switching is required. The device is known for its low on-resistance and high-speed operation, making it suitable for a wide range of electronic applications.
Manufacturer
The SI4463BDY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company supplies components that are critical for various applications in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is known for its development and production of a broad range of products, including diodes, MOSFETs, optoelectronics, and capacitors, among others.
Application
The SI4463BDY-T1-E3 is a MOSFET device commonly used in applications requiring efficient power management and switching. Its main application areas include DC-DC converters, power management in portable electronics, load switching, and battery protection circuits. It is also utilized in applications that demand low on-resistance and fast switching performance, making it suitable for motor control and power supply circuits in consumer electronics, automotive, and industrial equipment. Its compact package and efficient thermal performance make it ideal for space-constrained applications.
Package
The SI4463BDY-T1-E3 is a MOSFET transistor housed in an SO-8 surface-mount package, which is a small-outline package with eight leads. This package type is commonly used for compact electronic designs due to its space-efficient form factor.
