仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
概要
Description
The SI4848DY-T1-GE3 is a digital-controlled AM/FM/SW radio receiver IC from Silicon Labs, designed for portable and consumer audio applications. Key features include:
- Frequency Range: AM (520–1710 kHz), FM (64–108 MHz), and SW (2.3–26.1 MHz).
- Digital Tuning: I²C interface for precise control.
- Low Power: Optimized for battery-operated devices.
- Integrated DSP: Enhances signal processing and audio quality.
- Small Footprint: 20-pin SOIC package for compact designs.
Ideal for radios, portable media players, and IoT audio devices, it simplifies design with minimal external components. The GE3 suffix indicates RoHS compliance and lead-free packaging.
For detailed specs, refer to the datasheet.
- Frequency Range: AM (520–1710 kHz), FM (64–108 MHz), and SW (2.3–26.1 MHz).
- Digital Tuning: I²C interface for precise control.
- Low Power: Optimized for battery-operated devices.
- Integrated DSP: Enhances signal processing and audio quality.
- Small Footprint: 20-pin SOIC package for compact designs.
Ideal for radios, portable media players, and IoT audio devices, it simplifies design with minimal external components. The GE3 suffix indicates RoHS compliance and lead-free packaging.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI4848DY-T1-GE3 (RF tuner) include:
- SI4840-A10 (similar functionality, different package)
- TEF6638 (NXP, advanced tuner)
- TDA18250 (NXP, broadband tuner)
- MAX2112 (Maxim, satellite tuner)
These alternatives vary in features but serve similar RF tuning purposes. Check datasheets for exact compatibility.
- SI4840-A10 (similar functionality, different package)
- TEF6638 (NXP, advanced tuner)
- TDA18250 (NXP, broadband tuner)
- MAX2112 (Maxim, satellite tuner)
These alternatives vary in features but serve similar RF tuning purposes. Check datasheets for exact compatibility.
Features
The SI4848DY-T1-GE3 is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 10A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1.5V (typ)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is designed for high performance and efficiency in space-constrained designs.
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 10A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1.5V (typ)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is designed for high performance and efficiency in space-constrained designs.
Pinout
The SI4848DY-T1-GE3 is a 16-pin MOSFET in a PowerPAK® SO-8 package.
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Designed for high-efficiency DC-DC conversion and load switching in compact applications.
Pinout Highlights:
- Pins 1, 2, 3, 4 (Gate1, Source1, Drain1) for the first MOSFET.
- Pins 5, 6, 7, 8 (Drain2, Source2, Gate2) for the second MOSFET.
- Exposed thermal pad (bottom) for heat dissipation.
Applications:
- Power management in portable devices, servers, and automotive systems.
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Designed for high-efficiency DC-DC conversion and load switching in compact applications.
Pinout Highlights:
- Pins 1, 2, 3, 4 (Gate1, Source1, Drain1) for the first MOSFET.
- Pins 5, 6, 7, 8 (Drain2, Source2, Gate2) for the second MOSFET.
- Exposed thermal pad (bottom) for heat dissipation.
Applications:
- Power management in portable devices, servers, and automotive systems.
Manufacturer
The SI4848DY-T1-GE3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components. Vishay specializes in producing high-performance discrete semiconductors, resistors, capacitors, and inductors for industries like automotive, industrial, computing, and consumer electronics. The company is known for innovation, reliability, and a broad product portfolio.
The SI4848DY-T1-GE3 is a dual N-channel MOSFET designed for power management applications, offering low on-resistance and high efficiency.
The SI4848DY-T1-GE3 is a dual N-channel MOSFET designed for power management applications, offering low on-resistance and high efficiency.
Package
The SI4848DY-T1-GE3 comes in a SOIC-8 package. This surface-mount package is compact, measuring approximately 5.00mm x 6.00mm, and is suitable for automated assembly. It features 8 pins with a lead pitch of 1.27mm, making it ideal for space-constrained applications. The package is RoHS-compliant and designed for reliable performance in various electronic circuits.
