画像は参考用です
SI7113DN-T1-GE3
+BOMMOSFET P-CH 100V 13.2A PPAK
-
メーカービシェイ・シリコニクス
-
メーカー品番 #SI7113DN-T1-GE3
-
データシート SI7113DN-T1-GE3 DataSheet
-
パッケージ PowerPAK-1212
-
在庫状況4330
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13.2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 134mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 55 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1480 pF @ 50 V |
| PowerDissipation(Max) | 3.7W (Ta), 52W (Tc) |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
概要
Description
The SI7113DN-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for use in power management applications, offering efficient switching performance. This component features an N-channel MOSFET configuration, which is suitable for high-speed switching and low on-resistance, enhancing overall power efficiency.
Key specifications of the SI7113DN-T1-GE3 include a continuous drain current (ID) capability and a drain-source voltage (VDS) rating that make it suitable for various power applications. It is typically housed in a compact, thermally efficient package, making it ideal for applications where space and heat dissipation are critical considerations.
The SI7113DN-T1-GE3 is often used in applications such as DC-DC converters, load switches, and power management circuits in consumer electronics, telecommunications, and computing devices. Its design allows for integration into circuits where performance and reliability are essential, providing an optimal balance between power handling and physical footprint.
Key specifications of the SI7113DN-T1-GE3 include a continuous drain current (ID) capability and a drain-source voltage (VDS) rating that make it suitable for various power applications. It is typically housed in a compact, thermally efficient package, making it ideal for applications where space and heat dissipation are critical considerations.
The SI7113DN-T1-GE3 is often used in applications such as DC-DC converters, load switches, and power management circuits in consumer electronics, telecommunications, and computing devices. Its design allows for integration into circuits where performance and reliability are essential, providing an optimal balance between power handling and physical footprint.
Equivalent
The SI7113DN-T1-GE3 is a dual N-channel MOSFET by Vishay. Equivalent products can include similar dual N-channel MOSFETs with comparable specifications like Rds(on), Vgs, and package type. Some equivalents might be found from manufacturers such as Infineon, ON Semiconductor, or Texas Instruments. Examples might include Infineon's BSC100N06LS3 G or ON Semiconductor's NTTFS5828NLTAG, but exact matches should be verified based on detailed datasheets and specific application requirements.
Features
The SI7113DN-T1-GE3 is a N-channel MOSFET from Vishay Siliconix. Key features include:
1. Voltage & Current Ratings:
- Drain-Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 15A
2. Package:
- It comes in a PowerPAK® 1212-8 package, which is compact and thermally efficient.
3. RDS(on):
- Low on-resistance (RDS(on)) reduces power loss and improves efficiency.
4. Gate Threshold Voltage:
- Vgs(th) ranges typically from 1V to 3V, facilitating easy interfacing with low voltage circuits.
5. Thermal Characteristics:
- The device is designed to handle high-power applications with effective thermal management.
6. Applications:
- Suitable for DC-DC converters, load switching, and power management applications.
7. RoHS Compliance:
- It is compliant with RoHS standards, ensuring it is free from hazardous materials.
These features make the SI7113DN-T1-GE3 ideal for efficiency-critical and space-constrained applications.
1. Voltage & Current Ratings:
- Drain-Source Voltage (Vds): 30V
- Continuous Drain Current (Id): 15A
2. Package:
- It comes in a PowerPAK® 1212-8 package, which is compact and thermally efficient.
3. RDS(on):
- Low on-resistance (RDS(on)) reduces power loss and improves efficiency.
4. Gate Threshold Voltage:
- Vgs(th) ranges typically from 1V to 3V, facilitating easy interfacing with low voltage circuits.
5. Thermal Characteristics:
- The device is designed to handle high-power applications with effective thermal management.
6. Applications:
- Suitable for DC-DC converters, load switching, and power management applications.
7. RoHS Compliance:
- It is compliant with RoHS standards, ensuring it is free from hazardous materials.
These features make the SI7113DN-T1-GE3 ideal for efficiency-critical and space-constrained applications.
Pinout
The SI7113DN-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix. It typically comes in an 8-pin PowerPAK SO-8 package. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, handling power regulation and management tasks. It features low on-resistance and is suitable for high-efficiency power management applications. The precise pin configuration and functions can be confirmed from the manufacturer's datasheet, but generally, the pins include the gate, source, and drain connections, with additional pins for thermal management depending on the specific package design. For exact pin functions, it is advisable to refer to the datasheet or product documentation provided by Vishay.
Manufacturer
The SI7113DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, it is known for producing a wide range of products including MOSFETs, resistors, capacitors, diodes, and other semiconductor devices. Vishay's components are used in various industries, including automotive, industrial, consumer electronics, telecommunications, and medical sectors. The company is recognized for its focus on innovation, quality, and reliability in electronic component manufacturing.
Application
The SI7113DN-T1-GE3 is a MOSFET transistor commonly used in power management applications. It is typically found in areas such as DC-DC converters, load switches, power supply systems, and battery management in portable electronics. Its features make it suitable for applications requiring efficient power conversion and management, such as in consumer electronics, telecommunication equipment, and automotive systems. Its compact design also supports use in space-constrained applications.
Package
The SI7113DN-T1-GE3 is a MOSFET transistor packaged in a PowerPAK® SO-8 format. This packaging is known for its small size and efficient thermal performance, making it suitable for high-density applications.
