SI7115DN-T1-GE3

画像は参考用です

SI7115DN-T1-GE3

+BOM

MOSFET P-CH 150V 8.9A PPAK1212-8

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 8.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 295mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 42 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1190 pF @ 50 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

概要

Description

The SI7115DN-T1-GE3 is a semiconductor device, specifically a power MOSFET, designed for efficient switching applications. It is part of Vishay's line of MOSFETs that are commonly used in power management tasks. Key features of the SI7115DN-T1-GE3 include low on-resistance, which ensures minimal power loss and high efficiency, and a small form factor suitable for compact electronics. It is often used in applications such as DC-DC converters, load switching, and power supplies.
This MOSFET operates with a low threshold voltage, making it suitable for low-voltage applications. It is encapsulated in a PowerPAK SO-8 package, which provides effective thermal performance and compactness. The SI7115DN-T1-GE3 is known for its robustness and reliability in various operating conditions.
Engineers choose the SI7115DN-T1-GE3 for projects requiring efficient power handling and thermal management. Its application areas include computing, telecommunications, and consumer electronics. Overall, the SI7115DN-T1-GE3 is valued for its balance of performance, size, and reliability.

Equivalent

The SI7115DN-T1-GE3 is a N-channel MOSFET. Equivalent products are often determined by matching specifications such as voltage rating, current rating, package type, and Rds(on). Possible equivalents include:
1. NXP PSMN7R0-30YLD
2. Infineon BSC123N08NS5
3. ON Semiconductor NTMFS0015N
Always verify the specific requirements of your application, as slight differences can affect performance.

Features

The SI7115DN-T1-GE3 is a N-channel MOSFET from Vishay Siliconix known for its efficient power handling and compact size. Key features include:
1. Voltage and Current Ratings: It typically accommodates a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 15A, making it suitable for moderate power applications.
2. Low On-Resistance: It features a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency, crucial for applications requiring high efficiency.
3. Package: This MOSFET is housed in a PowerPAK 1212-8 package, providing a small footprint that is ideal for space-constrained designs.
4. Thermal Performance: The package offers good thermal performance, which helps in dissipating heat efficiently during operation.
5. Applications: It is commonly used in load switching, battery protection, DC-DC converters, and power management in portable and consumer electronics.
These features make the SI7115DN-T1-GE3 a versatile component for various electronic applications requiring reliable switching performance and efficient power management.

Pinout

The SI7115DN-T1-GE3 is a MOSFET transistor manufactured by Vishay. It is part of the PowerPAK® SO-8 series. This particular MOSFET is an N-channel device, which is commonly used for switching and amplification purposes in various electronic applications.
The SI7115DN-T1-GE3 comes in an SO-8 package with a total of 8 pins. In this configuration, typically, the pins are arranged as follows:
- Pins 1, 2, 3: Source (S)
- Pin 4: Gate (G)
- Pins 5, 6, 7, 8: Drain (D)
The PowerPAK® SO-8 package provides enhanced heat dissipation and is designed for efficient thermal and electrical performance. The MOSFET is often used in DC-DC converters, power management systems, and motor control circuits, among other applications. Its low on-resistance and high current handling capabilities make it suitable for high-efficiency designs. Always refer to the manufacturer's datasheet for detailed specifications and pin configurations pertinent to specific applications.

Manufacturer

The SI7115DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay's components are used in various industries, such as automotive, industrial, computing, consumer, telecommunications, and medical. The company is known for its focus on innovation, quality, and reliability in electronic component manufacturing.

Application

The SI7115DN-T1-GE3 is a power MOSFET designed for applications requiring efficient power management and switching. Its primary application areas include:
1. DC-DC Converters: Used in power supply circuits to efficiently step down or step up voltage levels.
2. Load Switches: Suitable for use in battery-operated devices where power conservation is crucial.
3. Motor Drives: Employed in controlling electric motors in consumer electronics and industrial applications.
4. LED Lighting: Used in driving LED circuits due to its efficient power handling capabilities.
5. Power Management in Portable Devices: Ideal for smartphones, tablets, and laptops where space and power efficiency are priorities.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.

Package

The SI7115DN-T1-GE3 is a power MOSFET that comes in a PowerPAK SO-8 package. This package type is known for its thermal efficiency and compact size, suitable for applications requiring efficient power management.

SI7115DN-T1-GE3に関連する製品