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SI7232DN-T1-GE3
+BOMMOSFET 2N-CH 20V 25A PPAK 1212-8
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メーカービシェイ・シリコニクス
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メーカー品番 #SI7232DN-T1-GE3
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データシート SI7232DN-T1-GE3 DataSheet
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パッケージ PowerPAK® 1212-8 Dual
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在庫状況3228
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 25A |
| RdsOn(Max)@IdVgs | 16.4mOhm @ 10A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 32nC @ 8V |
| InputCapacitance(Ciss)(Max)@Vds | 1220pF @ 10V |
| Power-Max | 23W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® 1212-8 Dual |
概要
Description
The SI7232DN-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications, offering efficient switching and amplification. Manufactured by Vishay Siliconix, it features advanced trench technology that enhances performance by reducing on-resistance and gate charge. This MOSFET is suitable for use in power management applications due to its low on-state resistance, which minimizes power loss and heat generation.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A, making it suitable for moderate power applications. The device is housed in a PowerPAK 1212-8 package, ensuring efficient thermal management and compact design for space-constrained applications. It also supports logic-level gate drive, making it compatible with lower voltage drive signals from microcontrollers.
The SI7232DN-T1-GE3 is widely used in DC-DC converters, synchronous rectification, and power supply circuits. Its high efficiency and reliability make it an ideal choice for automotive, industrial, and consumer electronics applications requiring robust power management solutions.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A, making it suitable for moderate power applications. The device is housed in a PowerPAK 1212-8 package, ensuring efficient thermal management and compact design for space-constrained applications. It also supports logic-level gate drive, making it compatible with lower voltage drive signals from microcontrollers.
The SI7232DN-T1-GE3 is widely used in DC-DC converters, synchronous rectification, and power supply circuits. Its high efficiency and reliability make it an ideal choice for automotive, industrial, and consumer electronics applications requiring robust power management solutions.
Equivalent
The SI7232DN-T1-GE3 is a MOSFET developed by Vishay. Equivalent products from other manufacturers may include:
- NXP PSMN1R0-30PL
- Infineon BSC059N06NS
- ON Semiconductor NTMFS5C628NL.
These equivalents should have similar voltage, current ratings, and package types, but always verify specific electrical characteristics and package compatibility with your application requirements.
- NXP PSMN1R0-30PL
- Infineon BSC059N06NS
- ON Semiconductor NTMFS5C628NL.
These equivalents should have similar voltage, current ratings, and package types, but always verify specific electrical characteristics and package compatibility with your application requirements.
Features
The SI7232DN-T1-GE3 is a power MOSFET designed by Vishay Siliconix, optimized for efficient high-speed switching applications. Key features include:
1. N-Channel MOSFET: This device is built on an N-channel technology, allowing it to conduct current when a positive voltage is applied to the gate.
2. Low On-Resistance: It offers very low on-resistance, which minimizes conduction losses and improves efficiency in power conversion applications.
3. Compact Package: The MOSFET is housed in a PowerPAK® 1212-8 package, providing a compact footprint that is suitable for space-constrained applications.
4. High Power Handling: It is designed to handle significant power loads, making it suitable for a wide range of high-power applications.
5. Fast Switching Speed: The device supports rapid switching speeds, which is ideal for high-frequency applications such as DC-DC converters.
6. Thermal Performance: It provides good thermal performance, helping dissipate heat effectively during operation.
These features make the SI7232DN-T1-GE3 ideal for use in applications requiring efficient power management, such as power supplies and motor control circuits.
1. N-Channel MOSFET: This device is built on an N-channel technology, allowing it to conduct current when a positive voltage is applied to the gate.
2. Low On-Resistance: It offers very low on-resistance, which minimizes conduction losses and improves efficiency in power conversion applications.
3. Compact Package: The MOSFET is housed in a PowerPAK® 1212-8 package, providing a compact footprint that is suitable for space-constrained applications.
4. High Power Handling: It is designed to handle significant power loads, making it suitable for a wide range of high-power applications.
5. Fast Switching Speed: The device supports rapid switching speeds, which is ideal for high-frequency applications such as DC-DC converters.
6. Thermal Performance: It provides good thermal performance, helping dissipate heat effectively during operation.
These features make the SI7232DN-T1-GE3 ideal for use in applications requiring efficient power management, such as power supplies and motor control circuits.
Pinout
The SI7232DN-T1-GE3 is a N-channel MOSFET transistor manufactured by Vishay Siliconix. It comes in a PowerPAK® SO-8 package, which typically has an 8-pin configuration. This MOSFET is designed for use in power management applications and offers features like low on-resistance, fast switching, and high efficiency.
In terms of pin count and function:
- Pin 1 and 2: Source (S)
- Pin 3: Gate (G)
- Pin 4 and 5: Drain (D)
- Pin 6, 7, and 8: Source (S)
The PowerPAK® SO-8 package usually has the drain connected to the exposed pad for better thermal performance. This configuration allows for efficient heat dissipation and is suitable for high-current applications. Please refer to the manufacturer's datasheet for precise pin configuration and detailed specifications.
In terms of pin count and function:
- Pin 1 and 2: Source (S)
- Pin 3: Gate (G)
- Pin 4 and 5: Drain (D)
- Pin 6, 7, and 8: Source (S)
The PowerPAK® SO-8 package usually has the drain connected to the exposed pad for better thermal performance. This configuration allows for efficient heat dissipation and is suitable for high-current applications. Please refer to the manufacturer's datasheet for precise pin configuration and detailed specifications.
Manufacturer
The SI7232DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the manufacture of discrete semiconductors and passive electronic components. They produce a wide range of components used in various electronic devices and systems, including diodes, MOSFETs, capacitors, resistors, and inductors. Vishay's products are utilized in industries such as automotive, industrial, consumer electronics, telecommunications, and computing. The company is known for its innovation and commitment to quality, making it a key player in the electronics manufacturing sector.
Application
The SI7232DN-T1-GE3 is a MOSFET used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules due to its efficient power handling capabilities.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics due to its low on-resistance.
3. Switching Applications: Ideal for high-frequency switching in power supplies and battery management systems.
4. Load Switching: Employed in load switch circuits for its fast switching speed.
5. Automotive Systems: Used in automotive power systems for its reliability and robustness.
These applications leverage the MOSFET's efficiency, thermal performance, and compact design.
1. Power Management: Used in DC-DC converters and voltage regulation modules due to its efficient power handling capabilities.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics due to its low on-resistance.
3. Switching Applications: Ideal for high-frequency switching in power supplies and battery management systems.
4. Load Switching: Employed in load switch circuits for its fast switching speed.
5. Automotive Systems: Used in automotive power systems for its reliability and robustness.
These applications leverage the MOSFET's efficiency, thermal performance, and compact design.
Package
The SI7232DN-T1-GE3 is a MOSFET from Vishay, typically packaged in a PowerPAK® 1212-8 package. This package is designed to handle high power with efficient thermal performance, commonly used in various electronic applications for switching and amplification.
