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SI7309DN-T1-GE3
+BOMMOSFET P-CH 60V 8A PPAK1212-8
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メーカービシェイ・シリコニクス
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メーカー品番 #SI7309DN-T1-GE3
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在庫状況28280
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 115mOhm @ 3.9A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 600 pF @ 30 V |
| PowerDissipation(Max) | 3.2W (Ta), 19.8W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
概要
Description
The SI7309DN-T1-GE3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is typically used in various electronic applications due to its efficient switching capabilities and reliability. Key features of this MOSFET include:
1. N-Channel Configuration: It features an N-channel design, suitable for applications requiring efficient current flow and switching.
2. Low On-Resistance: The SI7309DN-T1-GE3 offers low on-resistance, which minimizes power loss and improves efficiency in power management applications.
3. Small Form Factor: It is available in a compact, surface-mount package (PowerPAK® SO-8), making it suitable for high-density electronic designs.
4. High Current Capacity: This MOSFET is capable of handling significant current levels, suitable for various power electronics applications.
5. Enhanced Thermal Performance: Designed to efficiently dissipate heat, ensuring reliable operation under high-power conditions.
This MOSFET is commonly used in applications like DC-DC converters, motor control circuits, and load switches. Its specifications make it well-suited for consumer electronics, automotive, and industrial applications.
1. N-Channel Configuration: It features an N-channel design, suitable for applications requiring efficient current flow and switching.
2. Low On-Resistance: The SI7309DN-T1-GE3 offers low on-resistance, which minimizes power loss and improves efficiency in power management applications.
3. Small Form Factor: It is available in a compact, surface-mount package (PowerPAK® SO-8), making it suitable for high-density electronic designs.
4. High Current Capacity: This MOSFET is capable of handling significant current levels, suitable for various power electronics applications.
5. Enhanced Thermal Performance: Designed to efficiently dissipate heat, ensuring reliable operation under high-power conditions.
This MOSFET is commonly used in applications like DC-DC converters, motor control circuits, and load switches. Its specifications make it well-suited for consumer electronics, automotive, and industrial applications.
Equivalent
The SI7309DN-T1-GE3 is a dual N-channel MOSFET from Vishay. Equivalent products include:
1. NXP BUK9Y12-40E - Dual N-channel MOSFET with similar specifications.
2. Infineon BSC123N08NS3G - Offers similar voltage and current ratings.
3. ON Semiconductor NTD5867NL - Another dual N-channel MOSFET alternative.
Always cross-check specific parameters like voltage, current, and package type to ensure compatibility.
1. NXP BUK9Y12-40E - Dual N-channel MOSFET with similar specifications.
2. Infineon BSC123N08NS3G - Offers similar voltage and current ratings.
3. ON Semiconductor NTD5867NL - Another dual N-channel MOSFET alternative.
Always cross-check specific parameters like voltage, current, and package type to ensure compatibility.
Features
The SI7309DN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and reliability in power management applications. Key features include:
1. Type: N-channel MOSFET, suitable for various switching and amplification applications.
2. Voltage and Current Ratings: Designed to handle a specific range of voltages and current, ensuring compatibility with numerous power control environments.
3. Low On-Resistance: Offers low RDS(on), minimizing power loss and improving efficiency.
4. Compact Package: Available in a small, surface-mount package, ideal for space-constrained applications.
5. Thermal Performance: Efficient thermal management to support high-performance operation and reliability.
6. Fast Switching: Capable of rapid switching speeds, enhancing overall system performance.
7. Applications: Commonly used in DC-DC converters, power management systems, load switching, and other electronic applications requiring efficient power control.
8. Environmental Compliance: Often compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring reduced environmental impact.
These features make the SI7309DN-T1-GE3 a versatile component for various electronic and power management solutions.
1. Type: N-channel MOSFET, suitable for various switching and amplification applications.
2. Voltage and Current Ratings: Designed to handle a specific range of voltages and current, ensuring compatibility with numerous power control environments.
3. Low On-Resistance: Offers low RDS(on), minimizing power loss and improving efficiency.
4. Compact Package: Available in a small, surface-mount package, ideal for space-constrained applications.
5. Thermal Performance: Efficient thermal management to support high-performance operation and reliability.
6. Fast Switching: Capable of rapid switching speeds, enhancing overall system performance.
7. Applications: Commonly used in DC-DC converters, power management systems, load switching, and other electronic applications requiring efficient power control.
8. Environmental Compliance: Often compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring reduced environmental impact.
These features make the SI7309DN-T1-GE3 a versatile component for various electronic and power management solutions.
Pinout
The SI7309DN-T1-GE3 is a dual N-channel MOSFET. It typically comes in a PowerPAK SO-8 package. The pin count for this package is 8. The pins are configured as follows:
- Pins 1, 2, 3: Source (S1) of MOSFET 1
- Pin 4: Gate (G1) of MOSFET 1
- Pin 5: Gate (G2) of MOSFET 2
- Pins 6, 7, 8: Source (S2) of MOSFET 2
- The Drain (D) connections are internally connected to the large pad underneath the package.
The main function of the SI7309DN-T1-GE3 is to serve as a switch or amplifier in electronic circuits, utilizing its dual MOSFET design for efficient power management. It is commonly used in applications requiring high-speed switching, such as power conversion, motor control, and load switching.
- Pins 1, 2, 3: Source (S1) of MOSFET 1
- Pin 4: Gate (G1) of MOSFET 1
- Pin 5: Gate (G2) of MOSFET 2
- Pins 6, 7, 8: Source (S2) of MOSFET 2
- The Drain (D) connections are internally connected to the large pad underneath the package.
The main function of the SI7309DN-T1-GE3 is to serve as a switch or amplifier in electronic circuits, utilizing its dual MOSFET design for efficient power management. It is commonly used in applications requiring high-speed switching, such as power conversion, motor control, and load switching.
Manufacturer
The SI7309DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products including diodes, MOSFETs, integrated circuits, resistors, inductors, and capacitors. These components are used in various applications across different industries such as automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay is known for its innovation and quality in the electronics industry, providing essential components that enable the functionality of modern electronic devices and systems.
Application
The SI7309DN-T1-GE3 is a power MOSFET used in various applications due to its efficiency and performance. Common application areas include power management systems, DC-DC converters, load switches, and motor control circuits. It is particularly suited for portable electronics, battery-powered devices, and other applications requiring efficient power switching. Its compact design and low on-resistance make it ideal for space-constrained environments and applications where thermal management is critical.
Package
The SI7309DN-T1-GE3 is a MOSFET packaged in a PowerPAK® 1212-8 format. This package type is known for its compact size and efficient thermal performance, making it suitable for high-density electronic applications.
