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SI7465DP-T1-GE3
+BOMMOSFET P-CH 60V 3.2A PPAK SO-8
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メーカービシェイ・シリコニクス
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メーカー品番 #SI7465DP-T1-GE3
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データシート SI7465DP-T1-GE3 DataSheet
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在庫状況3757
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仕様
| 属性 | 値 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7465 |
概要
Description
The SI7465DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 30A, it operates effectively in power management and conversion. It features low on-resistance (Rds(on)), which minimizes conduction losses and improves overall efficiency.
This MOSFET is particularly suitable for applications in power supplies, motor control, and other high-frequency switching circuits. Its fast switching speeds enhance performance in various electronic devices. The package is typically a surface-mount type, facilitating compact design layouts.
The “T1-GE3” suffix indicates specific packaging and lead material details, and it's RoHS-compliant, making it environmentally friendly. For designers and engineers, the SI7465DP-T1-GE3 offers a reliable and efficient solution for modern electronic applications. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines.
This MOSFET is particularly suitable for applications in power supplies, motor control, and other high-frequency switching circuits. Its fast switching speeds enhance performance in various electronic devices. The package is typically a surface-mount type, facilitating compact design layouts.
The “T1-GE3” suffix indicates specific packaging and lead material details, and it's RoHS-compliant, making it environmentally friendly. For designers and engineers, the SI7465DP-T1-GE3 offers a reliable and efficient solution for modern electronic applications. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines.
Equivalent
The SI7465DP-T1-GE3 is an N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and FDN337N. These alternatives provide similar voltage and current ratings but may differ in parameters like on-resistance and gate threshold voltage. Always check the datasheet for specific electrical characteristics to ensure compatibility in your application.
Features
The SI7465DP-T1-GE3 is a N-channel MOSFET designed for high efficiency and performance in various applications. Key features include:
1. Voltage Rating: The device supports a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: It can handle a continuous drain current (Id) of 65A, making it suitable for high-power applications.
3. RDS(on): It has a low on-resistance of approximately 5.5 mΩ, which helps reduce power loss and improve efficiency.
4. Package Type: Available in a compact SO-8 package, allowing for easy integration into space-constrained designs.
5. Gate Threshold Voltage: The threshold voltage (Vgs(th)) ranges from 1V to 2.5V, enabling compatibility with low-voltage drive circuits.
6. Fast Switching: The device features fast switching characteristics, enhancing performance in switching applications.
7. Thermal Performance: It provides good thermal management, suitable for applications requiring high reliability and efficiency.
These features make the SI7465DP-T1-GE3 ideal for power management, DC-DC converters, and motor control applications.
1. Voltage Rating: The device supports a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: It can handle a continuous drain current (Id) of 65A, making it suitable for high-power applications.
3. RDS(on): It has a low on-resistance of approximately 5.5 mΩ, which helps reduce power loss and improve efficiency.
4. Package Type: Available in a compact SO-8 package, allowing for easy integration into space-constrained designs.
5. Gate Threshold Voltage: The threshold voltage (Vgs(th)) ranges from 1V to 2.5V, enabling compatibility with low-voltage drive circuits.
6. Fast Switching: The device features fast switching characteristics, enhancing performance in switching applications.
7. Thermal Performance: It provides good thermal management, suitable for applications requiring high reliability and efficiency.
These features make the SI7465DP-T1-GE3 ideal for power management, DC-DC converters, and motor control applications.
Pinout
The SI7465DP-T1-GE3 is a N-channel MOSFET with a total of 4 pins. Its primary functions include acting as a switch or amplifier in electronic circuits, specifically for power management applications. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's conduction state. Applying voltage to the gate turns the device on.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. Current enters here when the MOSFET is on.
4. Tab (T): The metal tab serves to dissipate heat and is typically connected to the source.
The SI7465DP-T1-GE3 is known for its low on-resistance and fast switching capabilities, making it suitable for applications like power supplies, DC-DC converters, and motor drives.
1. Gate (G): This pin controls the MOSFET's conduction state. Applying voltage to the gate turns the device on.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. Current enters here when the MOSFET is on.
4. Tab (T): The metal tab serves to dissipate heat and is typically connected to the source.
The SI7465DP-T1-GE3 is known for its low on-resistance and fast switching capabilities, making it suitable for applications like power supplies, DC-DC converters, and motor drives.
Manufacturer
The SI7465DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a renowned global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company operates in various sectors, including automotive, industrial, computing, and telecommunications.
Vishay is known for its broad range of products, including diodes, transistors, resistors, capacitors, and inductors, serving a diverse array of applications. The SI7465DP-T1-GE3 is a specific type of MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. Vishay's reputation is built on innovation, quality, and reliability in the electronic components industry.
As a publicly traded company, Vishay is committed to sustainability and corporate responsibility, with a focus on providing advanced technologies that enhance performance and efficiency across various electronic systems.
Vishay is known for its broad range of products, including diodes, transistors, resistors, capacitors, and inductors, serving a diverse array of applications. The SI7465DP-T1-GE3 is a specific type of MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. Vishay's reputation is built on innovation, quality, and reliability in the electronic components industry.
As a publicly traded company, Vishay is committed to sustainability and corporate responsibility, with a focus on providing advanced technologies that enhance performance and efficiency across various electronic systems.
Application
The SI7465DP-T1-GE3 is a N-channel MOSFET designed for low-voltage, high-efficiency applications. Its primary application areas include power management in DC-DC converters, load switching, and motor control. It is also suitable for use in portable devices, battery management systems, and power supplies where efficient energy conversion and thermal performance are essential. Additionally, it can be utilized in automotive electronics and renewable energy systems, such as solar inverters. Its features make it ideal for applications requiring compact, high-performance switching solutions.
Package
The SI7465DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit, 8-pin) format. This surface-mount package type is designed for efficient space utilization and thermal performance in electronic applications.
