画像は参考用です
SI7478DP-T1-GE3
+BOMMOSFET N-CH 60V 15A PPAK SO-8
-
メーカービシェイ・シリコニクス
-
メーカー品番 #SI7478DP-T1-GE3
-
在庫状況3247
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI7478 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Tape & Reel (TR) |
概要
Description
The SI7478DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Manufactured by Vishay, it features a low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance. This MOSFET can handle a maximum drain-source voltage of 30V and a continuous drain current of up to 40A, making it suitable for various applications, including DC-DC converters, switching power supplies, and motor drives.
Key specifications include a low threshold voltage (V_GS(th)), fast switching speeds, and a robust thermal performance with a maximum junction temperature of 150°C. The package type is typically a TO-220, which aids in heat dissipation. The SI7478DP-T1-GE3 is ideal for designs requiring high efficiency and reliability, making it a popular choice among engineers in power electronics.
Key specifications include a low threshold voltage (V_GS(th)), fast switching speeds, and a robust thermal performance with a maximum junction temperature of 150°C. The package type is typically a TO-220, which aids in heat dissipation. The SI7478DP-T1-GE3 is ideal for designs requiring high efficiency and reliability, making it a popular choice among engineers in power electronics.
Equivalent
The SI7478DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, BUK9515-55A, and STP55NF06L. Ensure to check specifications like voltage rating, current handling, and R_DS(on) to confirm compatibility for your application. Always consult the manufacturer's datasheets for precise comparisons.
Features
The SI7478DP-T1-GE3 is an N-channel MOSFET designed for high efficiency and performance in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 78A at 25°C, allowing for significant power handling.
3. RDS(on): It offers a low on-resistance of approximately 8.7 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The threshold voltage (Vgs(th)) is low, typically around 1-2.5V, enabling it to be driven easily by low-voltage logic levels.
5. Package Type: It is housed in a TO-220 package, providing excellent thermal performance and easy mounting.
6. Applications: Suitable for power management, DC-DC converters, motor drives, and other switching applications.
These features make the SI7478DP-T1-GE3 ideal for applications requiring efficient power switching.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 78A at 25°C, allowing for significant power handling.
3. RDS(on): It offers a low on-resistance of approximately 8.7 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The threshold voltage (Vgs(th)) is low, typically around 1-2.5V, enabling it to be driven easily by low-voltage logic levels.
5. Package Type: It is housed in a TO-220 package, providing excellent thermal performance and easy mounting.
6. Applications: Suitable for power management, DC-DC converters, motor drives, and other switching applications.
These features make the SI7478DP-T1-GE3 ideal for applications requiring efficient power switching.
Pinout
The SI7478DP-T1-GE3 is an N-channel MOSFET with a pin count of 8. It is designed for various applications, including power management and switching. The pin functions are as follows:
1. Gate: Controls the MOSFET's on/off state.
2. Drain: Connects to the load; current flows out of this pin when the device is on.
3. Source: Connects to ground or the negative side of the circuit; current flows into this pin when the device is on.
4. Exposed Pad: Used for thermal management and can be connected to ground for better heat dissipation.
The device is characterized by its low on-resistance, high-speed switching capabilities, and is suitable for applications such as DC-DC converters and motor drivers. For detailed specifications, it is advisable to refer to the manufacturer's datasheet.
1. Gate: Controls the MOSFET's on/off state.
2. Drain: Connects to the load; current flows out of this pin when the device is on.
3. Source: Connects to ground or the negative side of the circuit; current flows into this pin when the device is on.
4. Exposed Pad: Used for thermal management and can be connected to ground for better heat dissipation.
The device is characterized by its low on-resistance, high-speed switching capabilities, and is suitable for applications such as DC-DC converters and motor drivers. For detailed specifications, it is advisable to refer to the manufacturer's datasheet.
Manufacturer
The manufacturer of the SI7478DP-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a prominent global supplier of discrete semiconductors and passive components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay operates in various sectors, including automotive, industrial, telecommunications, consumer electronics, and military markets.
The SI7478DP-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and performance in power management applications. Vishay is recognized for its commitment to innovation, quality, and reliability, making it a significant player in the electronics industry. The company specializes in a broad range of products, including resistors, capacitors, inductors, diodes, and transistors, catering to diverse electronic needs globally.
The SI7478DP-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and performance in power management applications. Vishay is recognized for its commitment to innovation, quality, and reliability, making it a significant player in the electronics industry. The company specializes in a broad range of products, including resistors, capacitors, inductors, diodes, and transistors, catering to diverse electronic needs globally.
Application
The SI7478DP-T1-GE3 is an N-channel MOSFET designed for various applications, including:
1. Power Management: Efficient switching in power supplies and voltage regulators.
2. DC-DC Converters: Used in step-down or buck converters for energy conversion.
3. Motor Control: Drives for DC motors and brushless motors in industrial and consumer applications.
4. Load Switching: Controls electrical loads in lighting and heating systems.
5. Telecommunications: Power routing in telecom equipment.
6. Data Processing: Used in servers and computer systems for power efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. Power Management: Efficient switching in power supplies and voltage regulators.
2. DC-DC Converters: Used in step-down or buck converters for energy conversion.
3. Motor Control: Drives for DC motors and brushless motors in industrial and consumer applications.
4. Load Switching: Controls electrical loads in lighting and heating systems.
5. Telecommunications: Power routing in telecom equipment.
6. Data Processing: Used in servers and computer systems for power efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The SI7478DP-T1-GE3 is packaged in a DPAK (TO-252) surface mount package type.
