画像は参考用です
SI7884BDP-T1-GE3
+BOMMOSFET N-CH 40V 58A PPAK SO-8
-
メーカービシェイ・シリコニクス
-
メーカー品番 #SI7884BDP-T1-GE3
-
データシート SI7884BDP-T1-GE3 DataSheet
-
パッケージ PowerPAK-SO-8
-
在庫状況3629
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 58A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7.5mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 77 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3540 pF @ 20 V |
| Power Dissipation (Max) | 4.6W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
概要
Description
The SI7884BDP-T1-GE3 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is primarily used in power management applications due to its efficient switching capabilities and low on-resistance. This component is designed to handle significant power loads while maintaining minimal energy loss, making it suitable for applications like DC-DC converters, power supplies, and various types of power management circuits.
Key features of the SI7884BDP-T1-GE3 include a low on-state resistance that enhances efficiency, fast switching speeds for improved performance, and a high threshold voltage that increases reliability under high voltage conditions. It is typically encapsulated in a PowerPAK SO-8 package, which provides good thermal performance. Additionally, the MOSFET is designed to be lead (Pb)-free and RoHS compliant, aligning with environmental and safety standards.
Overall, the SI7884BDP-T1-GE3 is a versatile component suited for various electronic applications that require efficient power handling and high performance.
Key features of the SI7884BDP-T1-GE3 include a low on-state resistance that enhances efficiency, fast switching speeds for improved performance, and a high threshold voltage that increases reliability under high voltage conditions. It is typically encapsulated in a PowerPAK SO-8 package, which provides good thermal performance. Additionally, the MOSFET is designed to be lead (Pb)-free and RoHS compliant, aligning with environmental and safety standards.
Overall, the SI7884BDP-T1-GE3 is a versatile component suited for various electronic applications that require efficient power handling and high performance.
Equivalent
The SI7884BDP-T1-GE3 is a power MOSFET from Vishay. Equivalent products may include MOSFETs with similar specifications from manufacturers like Infineon, ON Semiconductor, and Nexperia. Key parameters to match include voltage rating, current handling, Rds(on), and package type. Specific models would need to be identified based on these specs, such as the Infineon BSC093N04LS, ON Semiconductor NTMFS4935N, or Nexperia PSMN1R0-40YLD. Always verify with datasheets to ensure compatibility.
Features
The SI7884BDP-T1-GE3 is a power MOSFET developed by Vishay Siliconix. This N-channel MOSFET is designed to handle high currents and voltages, making it suitable for demanding applications. It features a low on-resistance, which enhances its efficiency by reducing power losses during operation. The MOSFET is packaged in a PowerPAK SO-8 package, allowing for efficient thermal performance and compact design layouts. It supports a maximum drain-source voltage (V_DS) of around 30V and can handle continuous drain currents (I_D) up to a certain limit, typically specified in its datasheet.
The SI7884BDP-T1-GE3 also includes ESD protection, ensuring reliability against electrostatic discharge events. Its fast switching capabilities make it ideal for applications requiring quick response times. The device is often used in power management systems, DC-DC converters, motor drives, and various other consumer and industrial electronics. Additionally, its RoHS compliance ensures that it meets environmental and safety standards. For precise specifications, referring to the manufacturer's datasheet is recommended.
The SI7884BDP-T1-GE3 also includes ESD protection, ensuring reliability against electrostatic discharge events. Its fast switching capabilities make it ideal for applications requiring quick response times. The device is often used in power management systems, DC-DC converters, motor drives, and various other consumer and industrial electronics. Additionally, its RoHS compliance ensures that it meets environmental and safety standards. For precise specifications, referring to the manufacturer's datasheet is recommended.
Pinout
The SI7884BDP-T1-GE3 is a power MOSFET, specifically from Vishay's line of TrenchFET devices. It is an N-channel MOSFET that typically comes in a PowerPAK SO-8 package. The device features a pin count of 8.
Here is a brief overview of its pin functions:
1. Source (Pins 1, 2, 3, and 4): These pins are typically connected together internally and serve as the MOSFET's source terminal. They are used to connect the source of the MOSFET to the circuit.
2. Gate (Pin 5): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is turned on or off.
3. Drain (Pins 6, 7, and 8): These pins are also connected together internally and serve as the drain terminal of the MOSFET. They are used for the current flowing through the device when it is turned on.
The SI7884BDP-T1-GE3 is used in various applications for efficient power management due to its low on-resistance and high current handling capabilities.
Here is a brief overview of its pin functions:
1. Source (Pins 1, 2, 3, and 4): These pins are typically connected together internally and serve as the MOSFET's source terminal. They are used to connect the source of the MOSFET to the circuit.
2. Gate (Pin 5): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is turned on or off.
3. Drain (Pins 6, 7, and 8): These pins are also connected together internally and serve as the drain terminal of the MOSFET. They are used for the current flowing through the device when it is turned on.
The SI7884BDP-T1-GE3 is used in various applications for efficient power management due to its low on-resistance and high current handling capabilities.
Manufacturer
The SI7884BDP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. It is known for its extensive range of products, including MOSFETs, diodes, resistors, capacitors, and inductors. Vishay serves a variety of industries such as automotive, industrial, consumer electronics, telecommunications, and computing.
Application
The SI7884BDP-T1-GE3 is a power MOSFET used primarily in power management applications. Key areas include:
1. DC-DC Converters: Facilitates efficient power conversion in voltage regulation modules.
2. Load Switches: Controls power distribution in electronic devices and systems.
3. Motor Drives: Used in controlling motors, particularly in automotive and industrial applications.
4. Power Supply Units: Enhances efficiency and performance in switching power supplies.
5. Battery Management Systems: Manages power flow in battery-powered devices to optimize performance.
Its low on-resistance and high efficiency make it suitable for high-performance applications in computing, telecommunications, and consumer electronics.
1. DC-DC Converters: Facilitates efficient power conversion in voltage regulation modules.
2. Load Switches: Controls power distribution in electronic devices and systems.
3. Motor Drives: Used in controlling motors, particularly in automotive and industrial applications.
4. Power Supply Units: Enhances efficiency and performance in switching power supplies.
5. Battery Management Systems: Manages power flow in battery-powered devices to optimize performance.
Its low on-resistance and high efficiency make it suitable for high-performance applications in computing, telecommunications, and consumer electronics.
Package
The SI7884BDP-T1-GE3 is a MOSFET transistor from Vishay. It is packaged in a PowerPAK SO-8 type, which is a surface-mount package known for efficient thermal performance and compact size suitable for high-density applications.
