仕様
| 属性 | 値 |
| Supplier | NXP USA Inc. |
| Package | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 5A |
| RdsOn(Max)@IdVgs | 50mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35nC @ 10V |
| Power-Max | 900mW |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
