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SIHF080N60E-GE3
+BOME SERIES POWER MOSFET TO-220 FUL
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メーカービシェイ・シリコニクス
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メーカー品番 #SIHF080N60E-GE3
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在庫状況7122
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tube |
| Series | E |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 14A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 80mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2557 pF @ 100 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 Full Pack |
概要
Description
SIHF080N60E-GE3 is a high‑voltage N‑channel power switch from the SIHF family, used in switching power electronics. It is designed for 600 V class operation and is intended for high‑current applications such as motor drives, inverters, DC‑DC converters, and power supplies.
Key points (concise):
- Type: N‑channel power device (MOSFET or IGBT in the SIHF family). The exact device (MOSFET vs IGBT) depends on the specific revision.
- Voltage rating: roughly 600 V.
- Current and efficiency: designed for high current (tens of amperes range) with low on‑state drop and fast switching.
- Package/revision: GE3 suffix indicates a particular package and revision variant.
- Features: rugged switching performance, suitable for high dv/dt and transient conditions; suitable for typical protection and control schemes.
For precise values (Vds, Id, Rds(on) or Vce(sat), Qg, switching times, thermal data), consult the official datasheet or manufacturer’s page. If you share your application or a link to the datasheet, I can extract the exact specs.
Key points (concise):
- Type: N‑channel power device (MOSFET or IGBT in the SIHF family). The exact device (MOSFET vs IGBT) depends on the specific revision.
- Voltage rating: roughly 600 V.
- Current and efficiency: designed for high current (tens of amperes range) with low on‑state drop and fast switching.
- Package/revision: GE3 suffix indicates a particular package and revision variant.
- Features: rugged switching performance, suitable for high dv/dt and transient conditions; suitable for typical protection and control schemes.
For precise values (Vds, Id, Rds(on) or Vce(sat), Qg, switching times, thermal data), consult the official datasheet or manufacturer’s page. If you share your application or a link to the datasheet, I can extract the exact specs.
Features
SIHF080N60E-GE3 is a high‑voltage IGBT module. Typical features (subject to exact datasheet) include:
- 600 V class voltage rating; ~80 A continuous current
- Dual N‑channel IGBTs with integrated anti‑parallel diodes
- Half‑bridge style module in GE3 package with an isolated, thermally conductive baseplate
- Fast switching capability with low switching losses
- High dv/dt and di/dt capability; robust short‑circuit withstand
- Isolated mounting/connection; wide operating temperature range
- RoHS compliant; suitable for motor drives, inverters, and power supplies
Note: for precise electrical specs and protections, please refer to the exact datasheet from the vendor.
- 600 V class voltage rating; ~80 A continuous current
- Dual N‑channel IGBTs with integrated anti‑parallel diodes
- Half‑bridge style module in GE3 package with an isolated, thermally conductive baseplate
- Fast switching capability with low switching losses
- High dv/dt and di/dt capability; robust short‑circuit withstand
- Isolated mounting/connection; wide operating temperature range
- RoHS compliant; suitable for motor drives, inverters, and power supplies
Note: for precise electrical specs and protections, please refer to the exact datasheet from the vendor.
Pinout
Pin count: 3 leads (Gate, Drain, Source) with the drain typically tied to a tab in the package (i.e., 3 electrical pins + a drain tab).
Function: High-voltage N-channel power MOSFET (600 V) used as a switching device; GE3 denotes the package variant.
Function: High-voltage N-channel power MOSFET (600 V) used as a switching device; GE3 denotes the package variant.
Manufacturer
- Manufacturer: Vishay Intertechnology, Inc.
- What kind of company: A global manufacturer of electronic components, including discrete semiconductors (IGBTs, MOSFETs, diodes), resistors, capacitors, and related passive components and modules.
- What kind of company: A global manufacturer of electronic components, including discrete semiconductors (IGBTs, MOSFETs, diodes), resistors, capacitors, and related passive components and modules.
Application
SiHF080N60E-GE3 is a high-voltage N-channel switching device (600 V class). Common application areas include:
- Offline switch-mode power supplies (SMPS) and PFC stages
- DC-DC converters and energy storage systems
- Solar/wind inverters and battery chargers
- Uninterruptible power supplies and telecom rectifiers
- Motor drives (BLDC/PM and other DC motors)
- Automotive high-voltage power management
- Welding and induction-heating power supplies
Note: verify exact package/characteristics in the datasheet for your design.
- Offline switch-mode power supplies (SMPS) and PFC stages
- DC-DC converters and energy storage systems
- Solar/wind inverters and battery chargers
- Uninterruptible power supplies and telecom rectifiers
- Motor drives (BLDC/PM and other DC motors)
- Automotive high-voltage power management
- Welding and induction-heating power supplies
Note: verify exact package/characteristics in the datasheet for your design.
Package
Do you have the datasheet or supplier? The SIHF080N60E-GE3 package can vary by vendor; common options include TO-220AB (through-hole) and D²PAK/TO-263 (surface-mount). Please share the manufacturer so I can give the exact package code.
