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SIHG73N60E-GE3
+BOMMOSFET N-CH 600V 73A TO247AC
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メーカービシェイ・シリコニクス
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メーカー品番 #SIHG73N60E-GE3
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在庫状況4868
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 362 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 100 V |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Base Product Number | SIHG73 |
概要
Description
The SIHG73N60E-GE3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. This component features a voltage rating of 600V and a current rating of 73A, making it suitable for use in various industrial applications like motor drives, power supplies, and renewable energy systems.
Key characteristics include low switching losses and a high-speed operation, which enhance overall system efficiency. The device is housed in a TO-247 package, facilitating effective heat dissipation and ease of mounting. Its robust design makes it ideal for demanding environments, providing reliability and performance.
The SIHG73N60E-GE3 is often used in conjunction with gate drivers to optimize switching performance and control. Its versatility allows for applications in both AC and DC circuits, contributing to its popularity in the power electronics industry.
Key characteristics include low switching losses and a high-speed operation, which enhance overall system efficiency. The device is housed in a TO-247 package, facilitating effective heat dissipation and ease of mounting. Its robust design makes it ideal for demanding environments, providing reliability and performance.
The SIHG73N60E-GE3 is often used in conjunction with gate drivers to optimize switching performance and control. Its versatility allows for applications in both AC and DC circuits, contributing to its popularity in the power electronics industry.
Equivalent
The SIHG73N60E-GE3 is a 600V N-channel MOSFET. Equivalent products include the IRF840, STP7NK60Z, and FQP30N60. Always verify specifications such as R_DS(on), V_GS(th), and maximum current ratings to ensure compatibility in your specific application.
Features
The SIHG73N60E-GE3 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capacity: With a continuous drain current (I_D) rating of 73A, it can effectively handle significant load currents.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.15 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The device has a gate threshold voltage (V_GS(th)) of 2-4V, enabling efficient drive with lower gate drive voltages.
5. Fast Switching: Its design allows for high-speed switching, making it ideal for applications like switch-mode power supplies and inverters.
6. Package: Available in a TO-247 package, it provides excellent thermal performance and ease of mounting.
Overall, the SIHG73N60E-GE3 is ideal for high-performance power management and conversion applications.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capacity: With a continuous drain current (I_D) rating of 73A, it can effectively handle significant load currents.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.15 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The device has a gate threshold voltage (V_GS(th)) of 2-4V, enabling efficient drive with lower gate drive voltages.
5. Fast Switching: Its design allows for high-speed switching, making it ideal for applications like switch-mode power supplies and inverters.
6. Package: Available in a TO-247 package, it provides excellent thermal performance and ease of mounting.
Overall, the SIHG73N60E-GE3 is ideal for high-performance power management and conversion applications.
Pinout
The SIHG73N60E-GE3 is a high-voltage N-channel MOSFET from Vishay. It features a pin count of 3, corresponding to the standard configuration for MOSFETs: Gate (G), Drain (D), and Source (S).
Pin Functions:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET. It is typically connected to the load.
3. Source (S): This pin serves as the exit point for the current flowing through the MOSFET to the ground or circuit return.
The device is rated for a maximum drain-source voltage of 600V and can handle a continuous drain current of up to 73A, making it suitable for high-voltage applications in power electronics.
Pin Functions:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET. It is typically connected to the load.
3. Source (S): This pin serves as the exit point for the current flowing through the MOSFET to the ground or circuit return.
The device is rated for a maximum drain-source voltage of 600V and can handle a continuous drain current of up to 73A, making it suitable for high-voltage applications in power electronics.
Manufacturer
The manufacturer of the SIHG73N60E-GE3 is Vishay Intertechnology, Inc. Vishay is a multinational corporation that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay is recognized for its extensive portfolio of products, which includes diodes, capacitors, resistors, and MOSFETs, among others.
The SIHG73N60E-GE3 is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. Vishay serves a diverse range of industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The company is known for its emphasis on innovation and quality, providing reliable solutions for its customers worldwide. Vishay operates globally, with manufacturing facilities and sales offices in multiple countries, contributing to its reputation as a key player in the electronic components industry.
The SIHG73N60E-GE3 is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. Vishay serves a diverse range of industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The company is known for its emphasis on innovation and quality, providing reliable solutions for its customers worldwide. Vishay operates globally, with manufacturing facilities and sales offices in multiple countries, contributing to its reputation as a key player in the electronic components industry.
Application
The SIHG73N60E-GE3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key application areas include:
1. Inverters - Used in solar inverters and variable frequency drives (VFDs).
2. Motor Drives - Suitable for controlling industrial motors and drives.
3. Power Supplies - Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
4. UPS Systems - Incorporated in uninterruptible power supply systems for backup power.
5. Welding Equipment - Employed in induction and arc welding machines.
Its high voltage and fast switching capabilities make it ideal for these applications.
1. Inverters - Used in solar inverters and variable frequency drives (VFDs).
2. Motor Drives - Suitable for controlling industrial motors and drives.
3. Power Supplies - Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
4. UPS Systems - Incorporated in uninterruptible power supply systems for backup power.
5. Welding Equipment - Employed in induction and arc welding machines.
Its high voltage and fast switching capabilities make it ideal for these applications.
Package
The SIHG73N60E-GE3 is packaged in a TO-247 style, which is a robust, insulated package that supports high power applications. This package type is designed for efficient heat dissipation, making it suitable for high voltage and high current applications.
