SIR662DP-T1-GE3

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SIR662DP-T1-GE3

+BOM

MOSFET N-CH 60V 60A PPAK SO-8

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 2.7mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 96 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4365 pF @ 30 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

概要

Description

The SIR662DP-T1-GE3 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), often used in electronic circuits for switching and amplification purposes. It is manufactured by Vishay, a well-known supplier of discrete semiconductors and passive electronic components.
This particular MOSFET is designed for efficiency and performance, typically featuring low on-resistance and high-speed switching capabilities. It is commonly used in power management applications, including DC-DC converters, power supplies, and motor control circuits. The "GE3" suffix in the part number indicates a specific packaging or environmental compliance detail, often related to lead-free or RoHS-compliant versions.
With its compact packaging and robust performance, the SIR662DP-T1-GE3 helps designers optimize space and energy efficiency in electronic devices. It is crucial to review the datasheet provided by the manufacturer for detailed specifications, such as voltage and current ratings, thermal characteristics, and electrical characteristics, to ensure it meets the requirements of a specific application.

Equivalent

The SIR662DP-T1-GE3 is a N-channel MOSFET produced by Vishay. Equivalent products from other manufacturers may include:
1. IRF530 - by International Rectifier/Infineon
2. FQP30N06L - by ON Semiconductor/Fairchild
3. NTD4906N - by ON Semiconductor
4. STP55NF06 - by STMicroelectronics
Make sure to compare key parameters like voltage rating, current capacity, Rds(on), and package type to ensure true equivalence. Always refer to datasheets for precise matches.

Features

The SIR662DP-T1-GE3 is a high-performance, dual N-channel MOSFET designed for various electronic applications. Key features include:
1. Dual N-channel Configuration: Provides efficient switching and low on-resistance, which is crucial for reducing power loss in circuits.
2. Low On-Resistance: The MOSFET offers a low R_DS(on) value, enhancing its efficiency and performance in power management and switching applications.
3. High-Speed Switching: Designed for rapid switching operations, making it suitable for high-frequency applications.
4. Compact Package: Comes in a PowerPAK SO-8 package, providing a small footprint for space-constrained designs while ensuring effective thermal management.
5. Thermal Performance: Excellent thermal characteristics allow for high power dissipation, ensuring stability and reliability in demanding environments.
6. Wide Application Range: Suitable for use in DC-DC converters, motor drives, and load switch applications, among others.
These features make the SIR662DP-T1-GE3 a versatile choice for designers looking for reliable and efficient MOSFET solutions.

Manufacturer

The SIR662DP-T1-GE3 is manufactured by Vishay Intertechnology. Vishay is a global manufacturer and supplier of discrete semiconductors and passive electronic components. Established in 1962, the company is known for producing a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors, which are used in various electronic devices and systems across multiple industries. Vishay serves markets including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. The company is recognized for its innovation and commitment to providing high-quality and reliable components.

Application

The SIR662DP-T1-GE3 is a MOSFET used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation for efficient power conversion.
2. Switching Applications: Ideal for switching power supplies due to its fast switching speed and low on-resistance.
3. Load Switching: Controls loads in electronics, ensuring efficient on/off states.
4. Motor Control: Useful in controlling motors in industrial and consumer electronics.
5. Battery-Powered Devices: Enhances power efficiency and battery life in portable devices.
These applications benefit from the SIR662DP-T1-GE3's high efficiency, reliability, and thermal performance.

Package

The SIR662DP-T1-GE3 is a power MOSFET packaged in a PowerPAK SO-8, which is a compact, surface-mount package designed to offer efficient thermal performance and low on-resistance.

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