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SIRA12BDP-T1-GE3
+BOMMOSFET N-CH 30V 27A/60A PPAK SO8
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メーカービシェイ・シリコニクス
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メーカー品番 #SIRA12BDP-T1-GE3
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在庫状況4212
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| Base Product Number | SIRA12 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
