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SIRA18BDP-T1-GE3
+BOMMOSFET N-CH 30V 19A/40A PPAK SO8
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メーカービシェイ・シリコニクス
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メーカー品番 #SIRA18BDP-T1-GE3
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在庫状況9605
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Ta), 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.83mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | +20V, -16V |
| Input Capacitance(Ciss)(Max) @ Vds | 680 pF @ 15 V |
| Power Dissipation (Max) | 3.8W (Ta), 17W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
概要
Description
Pinout
Application
- Robotics and motion control (position sensing, motor feedback)
- Industrial automation and process control
- Automotive sensing and body electronics
- Consumer electronics and IoT
- Medical devices and laboratory instrumentation
- Telecommunications/RF front-ends
For precise applications, please share the datasheet or confirm the device category.