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SIS407ADN-T1-GE3
+BOMMOSFET P-CH 20V 18A PPAK1212-8
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メーカービシェイ・シリコニクス
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メーカー品番 #SIS407ADN-T1-GE3
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データシート SIS407ADN-T1-GE3 DataSheet
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在庫状況4338
365 日間品質保証
7*24 日間の品質保証
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1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 9mOhm @ 15A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 168 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 5875 pF @ 10 V |
| Power Dissipation (Max) | 3.7W (Ta), 39.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
概要
Description
"SIS407ADN-T1-GE3" appears to be a course code or identifier, possibly relating to a specific academic program or training module. The prefix "SIS" could refer to a specific subject area or department, such as a Student Information System or a specialized field study. "407" might indicate the course level, typically suggesting an advanced undergraduate or graduate-level course. "ADN" could represent a specific focus or specialization within the course, possibly related to a nursing program ("Associate Degree in Nursing"). "T1" might denote a term or semester designation, while "GE3" could be an internal code for categorizing the course under general education or elective requirements.
An introduction to such a course would typically cover the key topics and objectives, outlining expected learning outcomes. It would inform students about the curriculum, teaching methods, assessment criteria, and any prerequisites. Additionally, it may provide context on how the course fits within a larger program or prepares students for further academic pursuits or professional practice. Specific details would require access to the institution's course catalog or syllabus.
An introduction to such a course would typically cover the key topics and objectives, outlining expected learning outcomes. It would inform students about the curriculum, teaching methods, assessment criteria, and any prerequisites. Additionally, it may provide context on how the course fits within a larger program or prepares students for further academic pursuits or professional practice. Specific details would require access to the institution's course catalog or syllabus.
Equivalent
The SIS407ADN-T1-GE3 is a power MOSFET. Equivalent products can include similar N-channel MOSFETs with comparable voltage, current, and Rds(on) ratings. Some potential equivalents might be:
1. NXP's BUK9Y12-40E
2. Infineon's IPB041N10N3 G
3. ON Semiconductor's NTP6510NG
Ensure that these equivalents meet your specific circuit requirements, including package type and thermal performance. Always check the datasheets for compatibility before substitution.
1. NXP's BUK9Y12-40E
2. Infineon's IPB041N10N3 G
3. ON Semiconductor's NTP6510NG
Ensure that these equivalents meet your specific circuit requirements, including package type and thermal performance. Always check the datasheets for compatibility before substitution.
Features
The SIS407ADN-T1-GE3 is a Schottky barrier diode commonly used in electronic applications requiring efficient rectification and protection. Key features of this component include:
1. Low Forward Voltage Drop: This allows the diode to operate efficiently, minimizing power loss and heat generation.
2. High Efficiency: Its design supports high-speed switching, which is ideal for power-sensitive applications.
3. Surface-Mount Package: Available in a compact SOD-323 package, making it suitable for space-constrained designs.
4. Low Reverse Leakage Current: Ensures minimal current leakage when the diode is reverse-biased, enhancing overall circuit reliability.
5. High-Temperature Operation: Capable of functioning effectively over a wide range of temperatures, making it versatile for various environmental conditions.
6. RoHS Compliant: Meets environmental standards for hazardous substance restrictions, aligning with global compliance requirements.
7. Wide Application Range: Commonly used in power management, consumer electronics, telecommunications, and automotive systems for tasks such as voltage clamping, polarity protection, and signal rectification.
These features make the SIS407ADN-T1-GE3 a reliable choice for engineers designing high-performance electronic circuits.
1. Low Forward Voltage Drop: This allows the diode to operate efficiently, minimizing power loss and heat generation.
2. High Efficiency: Its design supports high-speed switching, which is ideal for power-sensitive applications.
3. Surface-Mount Package: Available in a compact SOD-323 package, making it suitable for space-constrained designs.
4. Low Reverse Leakage Current: Ensures minimal current leakage when the diode is reverse-biased, enhancing overall circuit reliability.
5. High-Temperature Operation: Capable of functioning effectively over a wide range of temperatures, making it versatile for various environmental conditions.
6. RoHS Compliant: Meets environmental standards for hazardous substance restrictions, aligning with global compliance requirements.
7. Wide Application Range: Commonly used in power management, consumer electronics, telecommunications, and automotive systems for tasks such as voltage clamping, polarity protection, and signal rectification.
These features make the SIS407ADN-T1-GE3 a reliable choice for engineers designing high-performance electronic circuits.
Pinout
The SIS407ADN-T1-GE3 is a N-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a small-outline package with 3 pins. Here’s a concise breakdown of the pin count and functions:
1. Pin Count: 3 pins
2. Pin Functions:
- Gate (G): This pin controls the on/off state of the MOSFET. By applying a voltage to the gate, the conductivity between the drain and source is modulated.
- Drain (D): The drain is the terminal through which the current flows from the load to the source when the MOSFET is turned on.
- Source (S): The source is the terminal through which the current leaves the MOSFET back to the ground or negative supply line.
This MOSFET is used for switching and amplifying electronic signals in various applications. The specific casing or package type might slightly vary, but the fundamental pin functions remain consistent with the description above. For detailed specifications, consulting the datasheet is recommended.
1. Pin Count: 3 pins
2. Pin Functions:
- Gate (G): This pin controls the on/off state of the MOSFET. By applying a voltage to the gate, the conductivity between the drain and source is modulated.
- Drain (D): The drain is the terminal through which the current flows from the load to the source when the MOSFET is turned on.
- Source (S): The source is the terminal through which the current leaves the MOSFET back to the ground or negative supply line.
This MOSFET is used for switching and amplifying electronic signals in various applications. The specific casing or package type might slightly vary, but the fundamental pin functions remain consistent with the description above. For detailed specifications, consulting the datasheet is recommended.
Manufacturer
The SIS407ADN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a well-established company in the electronics industry, known for producing a wide range of discrete semiconductors and passive electronic components. These products include diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors, among others. Vishay serves a broad spectrum of markets, including industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical.
The company was founded in 1962 and has grown through a series of strategic acquisitions to become one of the largest manufacturers of electronic components in the world. Vishay is headquartered in Malvern, Pennsylvania, and operates numerous manufacturing facilities and sales offices around the globe, enabling it to serve a diverse customer base with a wide array of product needs.
The company was founded in 1962 and has grown through a series of strategic acquisitions to become one of the largest manufacturers of electronic components in the world. Vishay is headquartered in Malvern, Pennsylvania, and operates numerous manufacturing facilities and sales offices around the globe, enabling it to serve a diverse customer base with a wide array of product needs.
Application
The SIS407ADN-T1-GE3 is typically used in power management and voltage regulation applications. It is commonly found in electronic devices where efficient energy conversion is crucial, such as in power supply units, voltage regulator modules, and DC-DC converters. Additionally, it can be utilized in telecommunications equipment, industrial automation systems, and consumer electronics to ensure stable voltage and current levels. Its compact size and efficient performance make it suitable for use in portable devices and applications demanding high power density and reliability.
Package
The SIS407ADN-T1-GE3 is a surface-mount device (SMD) packaged in a small-outline transistor (SOT-23) package. This package type is commonly used for small, low-power electronic components and is suitable for automated assembly processes.
