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SM41J256M16M
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メーカーJLCPCBコンポーネント
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メーカー品番 #SM41J256M16M
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在庫状況18537
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Manufacturer | JLCPCB Assembly |
| Package | BGA96_13.5X9mm |
概要
Description
The SM41J256M16M is a 16Gb (2GB) DDR4 SDRAM module from Micron Technology, designed for high-performance computing applications. Key features include:
- Capacity: 256M x 16 (16Gb)
- Speed: Up to 3200 Mbps (DDR4-3200)
- Voltage: 1.2V (standard DDR4)
- Density: 2GB per module
- Form Factor: Typically 260-pin SODIMM for laptops/embedded systems
- Low Power: Supports power-saving modes
It’s optimized for AI, edge computing, and industrial systems, offering reliability and efficiency. Check datasheets for exact specs like timings and thermal details.
- Capacity: 256M x 16 (16Gb)
- Speed: Up to 3200 Mbps (DDR4-3200)
- Voltage: 1.2V (standard DDR4)
- Density: 2GB per module
- Form Factor: Typically 260-pin SODIMM for laptops/embedded systems
- Low Power: Supports power-saving modes
It’s optimized for AI, edge computing, and industrial systems, offering reliability and efficiency. Check datasheets for exact specs like timings and thermal details.
Equivalent
Equivalent products to the SM41J256M16M (256Mb, 16Mx16, 3.3V SDRAM) include:
- IS42S16160J (ISSI)
- MT48LC16M16A2 (Micron)
- K4S281632J (Samsung)
- HY57V161610D (Hynix)
These are 16Mx16 (256Mb) 3.3V SDRAM chips with similar specs. Verify pin compatibility and timing parameters for your application.
- IS42S16160J (ISSI)
- MT48LC16M16A2 (Micron)
- K4S281632J (Samsung)
- HY57V161610D (Hynix)
These are 16Mx16 (256Mb) 3.3V SDRAM chips with similar specs. Verify pin compatibility and timing parameters for your application.
Pinout
The SM41J256M16M is a 256Mb (16M x 16) LPDDR4 SDRAM chip.
- Pin Count: 200-ball FBGA (Fine-Pitch Ball Grid Array)
- Key Functions:
- 16-bit data bus (DQ0-DQ15)
- Dual-channel (2x 8-bit) operation
- 1.1V core voltage (VDD/VDDQ)
- Supports up to 4266 Mbps data rate
- Low-power features (auto refresh, deep power-down)
- On-die termination (ODT) for signal integrity
Used in mobile/embedded systems for high-speed, low-power memory.
- Pin Count: 200-ball FBGA (Fine-Pitch Ball Grid Array)
- Key Functions:
- 16-bit data bus (DQ0-DQ15)
- Dual-channel (2x 8-bit) operation
- 1.1V core voltage (VDD/VDDQ)
- Supports up to 4266 Mbps data rate
- Low-power features (auto refresh, deep power-down)
- On-die termination (ODT) for signal integrity
Used in mobile/embedded systems for high-speed, low-power memory.
Manufacturer
The SM41J256M16M is a DDR4 memory module manufactured by Samsung Electronics, a leading South Korean multinational specializing in semiconductors, consumer electronics, and telecommunications. Samsung is one of the world's largest producers of memory chips, including DRAM and NAND flash, known for high-performance and reliable components. The SM41J256M16M is typically used in enterprise servers, data centers, and industrial applications. Samsung's memory division dominates the global market, emphasizing innovation and advanced manufacturing processes.
Package
The SM41J256M16M is a 256Mb (16Mx16) DDR SDRAM chip in a 54-pin TSOP-II package. It operates at 1.8V and is commonly used in embedded systems. The TSOP-II (Thin Small Outline Package) is surface-mounted, compact, and suitable for high-density memory applications.
