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SPD06N80C3
+BOMMOSFETs N-Ch 800V 6A DPAK-2 CoolMOS C3
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #SPD06N80C3
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データシート SPD06N80C3 DataSheet
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在庫状況27996
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
The SPD06N80C3 offers improved thermal performance and enhanced efficiency due to its low on-state resistance (R_DS(on)), which reduces energy loss during operation. Additionally, it supports fast switching speeds, which is beneficial in minimizing switching losses and improving overall system performance. The device comes in a standard TO-220 package, providing ease of mounting and heat dissipation. Its robust design ensures reliability and longevity, even under demanding conditions, making it a preferred choice for engineers looking to optimize energy efficiency and power density in their designs.
Equivalent
1. STMicroelectronics STP8NK80Z - Offers similar voltage and current ratings.
2. ON Semiconductor NTP8G100N - Matches in terms of power handling.
3. Fairchild FDPF12N80 - Comparable breakdown voltage and on-state resistance.
Ensure compatibility by verifying specific parameters such as Rds(on), Vgs, and package type for your application.
Features
1. N-Channel MOSFET: It is an n-channel enhancement mode MOSFET, suitable for switching applications.
2. Voltage and Current Ratings: The device can handle a maximum drain-source voltage (V_DS) of 800V and has a continuous drain current (I_D) rating of approximately 6A.
3. Low On-Resistance: It features a low on-state resistance (R_DS(on)), which minimizes power losses and enhances efficiency.
4. High Speed Switching: The MOSFET is designed for fast switching speeds, making it ideal for high-frequency applications.
5. Robust Design: It includes features for enhanced ruggedness and reliability, suitable for demanding environments.
6. Thermal Characteristics: The SPD06N80C3 is designed for efficient thermal management, improving performance under load.
7. Package Type: Typically available in TO-220 or similar packages, allowing for easy integration and heat dissipation in circuits.
These features make the SPD06N80C3 suitable for applications such as power supplies, converters, and various other electronic devices requiring efficient and reliable switching.
Pinout
1. Gate (G): This is the control terminal of the MOSFET, used to turn the device on and off. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is on.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is on.
The SPD06N80C3 is designed for high voltage and high power applications, typically used for switching and amplifying electronic signals in power supplies, converters, and other systems requiring efficient power management.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used for efficient power conversion in chargers, adapters, and power bricks.
2. LED Lighting: Functions in LED drivers for precise control and efficiency.
3. Motor Control: Utilized in industrial and consumer motor drives for better energy efficiency.
4. Renewable Energy Systems: Integrates into solar inverters and wind turbine converters for optimal power management.
5. Telecommunications: Supports base stations and network systems needing high-speed switching.
Its low on-resistance and fast switching make it suitable for these applications.