画像は参考用です
SPW47N60C3FKSA1
+BOMMOSFET N-CH 650V 47A TO247-3
-
メーカーインフィニオンテクノロジーズ
-
メーカー品番 #SPW47N60C3FKSA1
-
データシート SPW47N60C3FKSA1 DataSheet
-
パッケージ TO-247-3
-
在庫状況6884
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | CoolMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 47A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 2.7mA |
| Gate Charge(Qg)(Max) @ Vgs | 320 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6800 pF @ 25 V |
| Power Dissipation (Max) | 415W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-1 |
概要
Description
Key specifications include a low on-resistance, which minimizes conduction losses and enhances overall system efficiency. The SPW47N60C3FKSA1 also offers fast switching capabilities, contributing to reduced switching losses and improved thermal performance. The device is encapsulated in a TO-247 package, facilitating easy heat dissipation and integration into various circuit designs.
This MOSFET is ideal for applications requiring high reliability and efficiency, especially in environments demanding compact, cost-effective power management solutions. With its advanced technology and superior performance characteristics, the SPW47N60C3FKSA1 provides an excellent option for designers looking to optimize their power electronic systems.
Equivalent
1. STMicroelectronics STW48N60M2
2. ON Semiconductor NTP60N60SMD
3. Vishay SIHP48N60E-GE3
These alternatives offer similar voltage and current ratings, making them suitable replacements for comparable applications. Always verify specifications to ensure compatibility with your specific circuit requirements.
Features
Pinout
1. Gate (G): This is the terminal used to control the MOSFET. A voltage applied to the gate determines the conduction state of the device.
2. Drain (D): The drain is the terminal where the main current flows out of the MOSFET when it is in the conducting state.
3. Source (S): The source is the terminal where the main current enters the MOSFET. It is typically connected to ground in many applications.
The SPW47N60C3FKSA1 is designed for high-efficiency switching applications and can handle a maximum continuous drain current of 47A and a maximum drain-source voltage of 600V. It is commonly used in power supply circuits, motor drives, and other applications requiring efficient high-power switching.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion in computer servers and telecom equipment.
2. Motor Drives: Suitable for industrial motor control and automotive applications.
3. Photovoltaic Inverters: Used in solar power systems for DC to AC conversion.
4. Uninterruptible Power Supplies (UPS): Ensures continuity of power in critical systems.
5. Power Factor Correction (PFC) Circuits: Enhances power efficiency in electronic devices.
These applications benefit from the MOSFET's low on-resistance and high-speed switching.