SQJ457EP-T1_GE3

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SQJ457EP-T1_GE3

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MOSFET P-CH 60V 36A PPAK SO-8

  • メーカービシェイ・シリコニクス

  • メーカー品番 #SQJ457EP-T1_GE3

  • データシート SQJ457EP-T1_GE3 DataSheet

  • 在庫状況23971

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仕様

属性 値
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 36A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 25mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 100 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3400 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

概要

Description

The SQJ457EP-T1_GE3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) often used in electronic circuits for switching and amplifying electronic signals. Typically, this model is produced by Vishay, a manufacturer known for semiconductor products and passive electronic components.
Key features of the SQJ457EP-T1_GE3 include low on-resistance, which improves efficiency by reducing power loss during operation. It also offers high-speed switching capabilities, making it suitable for applications requiring quick response times, such as power management and motor control. The package is often designed to minimize power loss and thermal resistance.
The MOSFET might be used in various applications, including DC/DC converters, power supply circuits, and load switch control in consumer electronics, automotive, and industrial applications. Its compact design is suitable for space-constrained environments.
When integrating the SQJ457EP-T1_GE3 into a circuit, it's important to consider electrical characteristics like threshold voltage, gate charge, and maximum drain current to ensure compatibility and reliable performance.

Equivalent

The SQJ457EP-T1_GE3 is a MOSFET produced by Vishay. Equivalent products may include MOSFETs with similar specifications from other manufacturers, such as the IRF7456 from Infineon or the Si4488DY from Vishay itself. Always compare key specifications such as voltage rating, current handling, Rds(on), and package type to ensure compatibility. It’s recommended to consult datasheets and possibly cross-reference tools from manufacturers for precise equivalency.

Features

The SQJ457EP-T1_GE3 is a power MOSFET designed for various electronic applications. Here are the key features:
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: Typically handles a specific range of voltage and current, often suitable for medium power applications.
3. Low On-Resistance: Ensures efficient operation with minimal power loss.
4. Thermal Performance: Designed for effective heat dissipation, often utilizing a package that aids in thermal management.
5. Fast Switching: Features rapid switching capabilities, which is essential for high-speed applications.
6. Package Type: Often available in a compact, surface-mount package, facilitating easy integration into PCB designs.
7. Applications: Commonly used in power management, motor control, and switching power supplies.
For precise specifications like maximum voltage, current, on-resistance, and packaging details, referring to the manufacturer's datasheet is recommended.

Pinout

The SQJ457EP-T1_GE3 is a power MOSFET, and it typically comes in a package like the PowerPAK SO-8. This specific MOSFET package usually features 8 pins. The functions of these pins are generally as follows:
1. Gate: The gate terminal is used to control the MOSFET's switching operation.
2. Source: The source terminal is typically connected to the ground or reference point in the circuit.
3. Drain: The drain terminal is connected to the load where the current flows when the MOSFET is turned on.
In the PowerPAK SO-8 package, multiple pins are often connected internally to the same terminal to handle higher currents and reduce resistance. For instance, multiple pins might be tied together for the drain and source to improve current carrying capability and heat dissipation.
Please refer to the specific datasheet of the SQJ457EP-T1_GE3 for detailed pin configuration and functions, as there might be variations depending on the manufacturer and application.

Manufacturer

The SQJ457EP-T1_GE3 is manufactured by Vishay Intertechnology. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products that are used in various industries including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay is known for producing components such as diodes, MOSFETs, resistors, inductors, and capacitors. Their products are essential for the functionality of electronic circuits, offering solutions for power management, signal conditioning, electromagnetic interference suppression, and more. Vishay Intertechnology, founded in 1962, is headquartered in Malvern, Pennsylvania, USA, and is recognized for its contribution to the electronics industry through innovation and technology.

Application

The SQJ457EP-T1_GE3 is a power MOSFET commonly used in applications such as power management systems, DC-DC converters, and load switch circuits. It is often utilized in battery-powered devices, consumer electronics, and automotive systems due to its efficiency in handling low-voltage, high-current loads. Its compact package and thermal performance make it suitable for high-density applications, where space is limited and thermal management is critical. Additionally, this MOSFET can be employed in photovoltaic inverters and motor control circuits, enhancing energy efficiency and performance.

Package

The SQJ457EP-T1_GE3 is a MOSFET transistor from Vishay. It comes in a PowerPAK® SO-8 package, which is a surface-mount package type designed for efficient thermal management and compactness in electronic circuits.

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