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SQJ459EP-T1_GE3
+BOMMOSFET P-CH 60V 52A PPAK SO-8
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メーカービシェイ・シリコニクス
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メーカー品番 #SQJ459EP-T1_GE3
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データシート SQJ459EP-T1_GE3 DataSheet
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在庫状況17468
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 52A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 108 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4586 pF @ 30 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
概要
Description
"Introduction to SQJ459EP-T1_GE3" likely refers to a specific topic, document, or product code, but there isn't enough information available to provide a detailed explanation. If SQJ459EP-T1_GE3 is related to a product or technical component, the introduction would typically cover its purpose, key features, specifications, and potential applications. For example, it might describe the item's design, functionality, compatibility with other systems, and any unique benefits it offers.
For technical or educational materials, the introduction might outline the scope of the content, objectives, and the relevance of the information to the reader or user. If the context or field (such as electronics, software, or manufacturing) is specified, a more detailed summary could be provided.
If you have additional context or can specify the field or type of document related to SQJ459EP-T1_GE3, I can give a more targeted response.
For technical or educational materials, the introduction might outline the scope of the content, objectives, and the relevance of the information to the reader or user. If the context or field (such as electronics, software, or manufacturing) is specified, a more detailed summary could be provided.
If you have additional context or can specify the field or type of document related to SQJ459EP-T1_GE3, I can give a more targeted response.
Equivalent
The SQJ459EP-T1_GE3 is a power MOSFET produced by Vishay. Equivalent products could include MOSFETs with similar specifications from other manufacturers. Some potential equivalents might be:
1. IRF530 by International Rectifier
2. NTD4906N by ON Semiconductor
3. FQP27P06 by Fairchild Semiconductor
When selecting an equivalent, ensure that the voltage, current, RDS(on), and package type match the original specifications closely. Always consult datasheets to confirm compatibility.
1. IRF530 by International Rectifier
2. NTD4906N by ON Semiconductor
3. FQP27P06 by Fairchild Semiconductor
When selecting an equivalent, ensure that the voltage, current, RDS(on), and package type match the original specifications closely. Always consult datasheets to confirm compatibility.
Pinout
The SQJ459EP-T1_GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is a P-Channel MOSFET with an array of features suitable for various applications. This component comes in a PowerPAK® SO-8 package, which typically has an 8-pin layout.
Key features of the SQJ459EP-T1_GE3 include:
- Pin Count: 8 pins, which is standard for the PowerPAK SO-8 package.
- Function: It serves as a switch or amplifier in electronic circuits, capable of handling high power levels. Specifically, this MOSFET is designed for switching applications and is often used in environments requiring efficient power management, such as DC-DC converters or load switches.
Its configuration allows it to handle relatively high currents and voltages, thus making it suitable for demanding applications. The P-Channel characteristic means it is activated by negative voltages relative to the source.
For detailed specifications, one should refer to the datasheet provided by Vishay.
Key features of the SQJ459EP-T1_GE3 include:
- Pin Count: 8 pins, which is standard for the PowerPAK SO-8 package.
- Function: It serves as a switch or amplifier in electronic circuits, capable of handling high power levels. Specifically, this MOSFET is designed for switching applications and is often used in environments requiring efficient power management, such as DC-DC converters or load switches.
Its configuration allows it to handle relatively high currents and voltages, thus making it suitable for demanding applications. The P-Channel characteristic means it is activated by negative voltages relative to the source.
For detailed specifications, one should refer to the datasheet provided by Vishay.
Manufacturer
The SQJ459EP-T1_GE3 is manufactured by Vishay Intertechnology. Vishay is a global company known for designing, manufacturing, and supplying discrete semiconductors and passive electronic components. The company's product portfolio includes diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. These components are used in a wide range of applications across various industries, including automotive, industrial, consumer electronics, telecommunications, and computing. Vishay's emphasis on innovation and quality has established it as a key player in the electronics industry.
Application
The SQJ459EP-T1_GE3 is a MOSFET used primarily in power management applications. It is suitable for switch-mode power supplies, DC-DC converters, and load switching. Additionally, it is utilized in battery management systems for portable electronics, automotive applications, and industrial equipment. Its efficiency in handling high-speed switching and low on-resistance makes it ideal for minimizing power loss and improving overall system performance.
Package
The SQJ459EP-T1_GE3 is a MOSFET in a PowerPAK® SO-8 package. This package type is designed to provide efficient thermal performance and low on-resistance, making it suitable for a range of power applications.
