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STB40N60M2
+BOMMOSFET N-CH 600V 34A D2PAK
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メーカーRFE/フューゼテック
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メーカー品番 #STB40N60M2
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在庫状況6790
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | MDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 88mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 57 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D2PAK) |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB40 |
概要
Description
The STB40N60M2 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance switching applications. It is part of STMicroelectronics' STB series, known for its low on-resistance, high-speed switching capabilities, and robust design.
Key features include a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 40A, and a low R_DS(on) value, which minimizes power loss during operation. The device is suitable for applications such as switch-mode power supplies, motor drives, and other power management systems.
The MOSFET package typically is available in TO-220 or DPAK, facilitating efficient thermal management. With its fast switching speeds and high voltage rating, the STB40N60M2 is ideal for modern electronic circuits that require reliability and efficiency. Proper thermal management and circuit design are essential to maximize performance and longevity in applications.
Key features include a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 40A, and a low R_DS(on) value, which minimizes power loss during operation. The device is suitable for applications such as switch-mode power supplies, motor drives, and other power management systems.
The MOSFET package typically is available in TO-220 or DPAK, facilitating efficient thermal management. With its fast switching speeds and high voltage rating, the STB40N60M2 is ideal for modern electronic circuits that require reliability and efficiency. Proper thermal management and circuit design are essential to maximize performance and longevity in applications.
Equivalent
The STB40N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF840 - 500V, 8A MOSFET
2. MTP40N60E - 600V, 40A MOSFET
3. FQP40N60 - 600V, 40A MOSFET
4. NTMFS5C604N - 600V, 50A MOSFET
Always verify specifications, such as voltage rating, current rating, Rds(on), and package type, to ensure compatibility for your specific application.
1. IRF840 - 500V, 8A MOSFET
2. MTP40N60E - 600V, 40A MOSFET
3. FQP40N60 - 600V, 40A MOSFET
4. NTMFS5C604N - 600V, 50A MOSFET
Always verify specifications, such as voltage rating, current rating, Rds(on), and package type, to ensure compatibility for your specific application.
Features
The STB40N60M2 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Up to 600V, making it suitable for high-voltage switching applications.
2. Continuous Current: Supports a maximum continuous drain current of 40A.
3. Low On-Resistance (Rds(on)): Typically around 0.15Ω at Vgs = 10V, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
5. Fast Switching Speeds: Optimized for quick switching, beneficial in high-frequency applications.
6. Thermal Performance: Equipped with a TO-220 package, facilitating effective heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency switching applications.
Overall, the STB40N60M2 is a robust choice for engineers seeking reliable performance in demanding electronic designs.
1. Voltage Rating: Up to 600V, making it suitable for high-voltage switching applications.
2. Continuous Current: Supports a maximum continuous drain current of 40A.
3. Low On-Resistance (Rds(on)): Typically around 0.15Ω at Vgs = 10V, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
5. Fast Switching Speeds: Optimized for quick switching, beneficial in high-frequency applications.
6. Thermal Performance: Equipped with a TO-220 package, facilitating effective heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency switching applications.
Overall, the STB40N60M2 is a robust choice for engineers seeking reliable performance in demanding electronic designs.
Pinout
The STB40N60M2 is an N-channel MOSFET from STMicroelectronics with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the load connects. This is the terminal through which the current flows when the MOSFET is turned on.
3. Source (S): The source pin is the terminal connected to ground or the lower potential in the circuit. Current flows from the drain to the source when the device is activated.
4. Body Diode (internal): The device also features a built-in body diode, which allows current to flow in the reverse direction when the MOSFET is off.
This MOSFET is commonly used in power applications due to its high voltage rating (600V) and low on-resistance.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the load connects. This is the terminal through which the current flows when the MOSFET is turned on.
3. Source (S): The source pin is the terminal connected to ground or the lower potential in the circuit. Current flows from the drain to the source when the device is activated.
4. Body Diode (internal): The device also features a built-in body diode, which allows current to flow in the reverse direction when the MOSFET is off.
This MOSFET is commonly used in power applications due to its high voltage rating (600V) and low on-resistance.
Manufacturer
The STB40N60M2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics is a leading provider of semiconductor solutions, offering a wide range of products including microcontrollers, power management devices, and sensors. The company serves various industries such as automotive, industrial, consumer electronics, and communications. It focuses on innovation and sustainability, developing technologies that enable energy efficiency and connectivity. STMicroelectronics is known for its robust R&D capabilities and comprehensive portfolio, making it a key player in the electronics sector.
Application
The STB40N60M2 is a power MOSFET designed for high-voltage applications. It is commonly used in:
1. Switching Power Supplies - Efficiently managing power conversion in industrial and consumer electronics.
2. Motor Drives - Controlling DC and AC motors in automotive and industrial applications.
3. Inverters - Converting DC to AC power in renewable energy systems like solar inverters.
4. Lighting Control - Managing power in LED drivers.
5. High-Power Applications - Suitable for use in amplifiers and RF applications.
Its high voltage rating and low on-resistance make it ideal for these applications, ensuring efficient power management.
1. Switching Power Supplies - Efficiently managing power conversion in industrial and consumer electronics.
2. Motor Drives - Controlling DC and AC motors in automotive and industrial applications.
3. Inverters - Converting DC to AC power in renewable energy systems like solar inverters.
4. Lighting Control - Managing power in LED drivers.
5. High-Power Applications - Suitable for use in amplifiers and RF applications.
Its high voltage rating and low on-resistance make it ideal for these applications, ensuring efficient power management.
Package
The STB40N60M2 is packaged in a TO-220 form factor. This type of package is designed for high-power applications, providing efficient heat dissipation and easy mounting on heat sinks.
