画像は参考用です
STB45N30M5
+BOMNCHANNEL 300 V 0.037 OHM TYP. 53
-
メーカーRFE/フューゼテック
-
メーカー品番 #STB45N30M5
-
データシート STB45N30M5 DataSheet
-
パッケージ TO-263-3
-
在庫状況5807
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ M5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 300 V |
| Current-ContinuousDrain(Id)@25°C | 53A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 26.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 95 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4240 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概要
Description
- Voltage Rating: 30V
- Current Handling: 45A (continuous)
- Low On-Resistance (RDS(on)): 3.5 mΩ (max) at 10V VGS
- Fast Switching: Suitable for PWM and motor control
- Logic-Level Gate Drive: Enhanced efficiency at lower voltages
It is commonly used in DC-DC converters, motor drives, and power management systems due to its robustness and efficiency. The device is housed in a TO-263 (D²PAK) package, ensuring good thermal performance.
For optimal performance, ensure proper gate drive and heat dissipation. Check the datasheet for detailed specifications.
Equivalent
- IRF3205 (55V, 110A)
- IRLB4132 (30V, 180A)
- AOT290L (30V, 90A)
- FDP8870 (30V, 120A)
Check datasheets for exact specs like RDS(on) and package compatibility.
Features
- Voltage Rating: 300V drain-source voltage (VDSS).
- Current Rating: 45A continuous drain current (ID).
- Low On-Resistance: 45mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Low Gate Charge (QG): Enhances switching efficiency.
- TO-263 (D²PAK) Package: Suitable for power applications with good thermal performance.
Ideal for switching power supplies, motor control, and DC-DC converters.
Pinout
- Pin Count: 3 pins (Gate, Drain, Source) in a TO-263 (D²PAK) package.
- Function: Designed for high-power switching applications, it features:
- 30V drain-source voltage (VDS).
- 45A continuous drain current (ID).
- Low on-resistance (RDS(on) = 9.5mΩ max) for efficient power handling.
- Fast switching performance, suitable for DC-DC converters, motor control, and power management.
Its TO-263 package provides good thermal performance for heat dissipation.
Manufacturer
STMicroelectronics is a multinational semiconductor company headquartered in Geneva, Switzerland. It designs, manufactures, and sells a wide range of semiconductor products, including microcontrollers, sensors, power devices, and integrated circuits for automotive, industrial, and consumer electronics. Known for innovation and reliability, STMicroelectronics is a key player in the global semiconductor industry.
The STB45N30M5 is a 30V, 45A N-channel MOSFET optimized for high-efficiency power switching applications.
Application
1. Power Supplies – DC-DC converters, SMPS.
2. Motor Control – Brushed/BLDC motor drivers.
3. Automotive Systems – Electronic control units (ECUs), lighting.
4. Battery Management – Protection circuits, load switches.
5. Industrial Applications – Inverters, solenoids, relays.
Its low on-resistance (RDS(on)) and high current handling make it suitable for high-efficiency switching in these fields.