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STB9NK80Z
+BOMMOSFET N-CH 800V 5.2A D2PAK
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メーカーRFE/フューゼテック
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メーカー品番 #STB9NK80Z
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在庫状況6979
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | SuperMESH™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 5.2A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.8Ohm @ 2.6A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1138 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB9 |
概要
Description
The STB9NK80Z is a high-voltage N-channel MOSFET designed for use in power applications, particularly in switching and amplification. It has a voltage rating of 800V and a continuous drain current rating of 9A, making it suitable for various high-voltage designs. This MOSFET features low on-resistance (R_DS(on)) and fast switching capabilities, which contribute to improved efficiency in power conversion circuits.
The device is typically used in applications such as motor drives, power supplies, and inverters. Its high breakdown voltage ensures reliability in demanding environments, while its package (usually TO-220) allows for effective thermal management.
Key specifications include a maximum gate-source voltage of ±20V, a total gate charge of around 30nC, and a threshold voltage (V_GS(th)) in the range of 2 to 4V. Overall, the STB9NK80Z is a robust component ideal for engineers seeking efficient, high-voltage solutions in their designs.
The device is typically used in applications such as motor drives, power supplies, and inverters. Its high breakdown voltage ensures reliability in demanding environments, while its package (usually TO-220) allows for effective thermal management.
Key specifications include a maximum gate-source voltage of ±20V, a total gate charge of around 30nC, and a threshold voltage (V_GS(th)) in the range of 2 to 4V. Overall, the STB9NK80Z is a robust component ideal for engineers seeking efficient, high-voltage solutions in their designs.
Equivalent
The STB9NK80Z is an N-channel MOSFET with a voltage rating of 800V and a current rating of 9A. Equivalent products include the IXFH9N80P, IRF840, and MBRF840. Always verify specifications such as RDS(on), gate threshold voltage, and package type to ensure compatibility in your application.
Features
The STB9NK80Z is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Capable of handling up to 800V, making it suitable for high-voltage circuits.
2. Current Rating: Can support continuous drain current up to 9A, allowing for significant power handling.
3. Low RDS(on): Features a low on-state resistance, typically around 0.9 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for high-speed operation, making it suitable for switching applications in power supplies and converters.
5. Thermal Resistance: Good thermal performance helps manage heat dissipation effectively.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility for different PCB designs.
7. Gate Threshold Voltage: Suitable for standard drive voltages, enhancing compatibility with various circuits.
Overall, the STB9NK80Z is an efficient, high-performance MOSFET ideal for applications in power management and conversion.
1. Voltage Rating: Capable of handling up to 800V, making it suitable for high-voltage circuits.
2. Current Rating: Can support continuous drain current up to 9A, allowing for significant power handling.
3. Low RDS(on): Features a low on-state resistance, typically around 0.9 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for high-speed operation, making it suitable for switching applications in power supplies and converters.
5. Thermal Resistance: Good thermal performance helps manage heat dissipation effectively.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility for different PCB designs.
7. Gate Threshold Voltage: Suitable for standard drive voltages, enhancing compatibility with various circuits.
Overall, the STB9NK80Z is an efficient, high-performance MOSFET ideal for applications in power management and conversion.
Pinout
The STB9NK80Z is an N-channel MOSFET with a pin count of 3. The pins are typically assigned as follows:
1. Gate (G): This pin controls the MOSFET operation and is used to switch the device on or off by applying a voltage.
2. Drain (D): This is the terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S): This terminal is where the current enters when the MOSFET is conducting.
The STB9NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 9A. It is commonly used in power switching applications and offers low on-resistance, making it efficient for various electronic circuits.
1. Gate (G): This pin controls the MOSFET operation and is used to switch the device on or off by applying a voltage.
2. Drain (D): This is the terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S): This terminal is where the current enters when the MOSFET is conducting.
The STB9NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 9A. It is commonly used in power switching applications and offers low on-resistance, making it efficient for various electronic circuits.
Manufacturer
The STB9NK80Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacture, and marketing of a wide range of semiconductor products and solutions. The company is known for its innovations in various sectors, including automotive, industrial, personal electronics, and communication equipment. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is one of the largest semiconductor companies in the world. It focuses on power management, microcontrollers, sensors, and analog devices, among other technologies, and plays a significant role in driving advancements in the electronics industry. The STB9NK80Z itself is a N-channel MOSFET, commonly used in power management applications.
Application
The STB9NK80Z is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Switching Power Supplies: Efficiently managing power conversion in DC-DC converters and inverters.
2. Motor Control: Operating in driving circuits for electric motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers for efficient dimming and control.
4. Heating Systems: Employed in heating elements and resistive load switching.
5. Automotive Applications: Suitable for power distribution and management in vehicles.
Its high voltage rating and low on-resistance make it ideal for these applications.
1. Switching Power Supplies: Efficiently managing power conversion in DC-DC converters and inverters.
2. Motor Control: Operating in driving circuits for electric motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers for efficient dimming and control.
4. Heating Systems: Employed in heating elements and resistive load switching.
5. Automotive Applications: Suitable for power distribution and management in vehicles.
Its high voltage rating and low on-resistance make it ideal for these applications.
Package
The STB9NK80Z is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation, making it suitable for high-power applications.
